Magnetic State Switching in FeGa Microstructures

This work demonstrates that magnetoelectric composite heterostructures can be designed at the length scale of 10 microns that can be switched from a magnetized state to a vortex state, effectively switching the magnetization off, using electric field induced strain. This was accomplished using thin film magnetoelectric heterostructures of Fe81.4Ga18.6 on a single crystal (011) [Pb(Mg1/3Nb2/3)O3]0.68-[PbTiO3]0.32 (PMN-32PT) ferroelectric substrate. The heterostructures were tripped from a multi-domain magnetized state to a flux closure vortex state using voltage induced strain in a piezoelectric substrate. FeGa heterostructures were deposited on a Si-substrate for SQUID magnetometry characterization of the magnetic properties. The magnetoelectric coupling of a FeGa continuous film on PMN-32PT was characterized using a MOKE magnetometer with bi-axial strain gauges, and magnetic multi-domain heterostructures were imaged using X-Ray Magnetic Circular Dichroism – Photoemission Electron Microscopy (XMCD-PEEM) during the transition to the vortex state. The domain structures were modelled using MuMax3, a micromagnetics code, and compared with observations. The results provide considerable insight into designing magnetoelectric heterostructures that can be switched from an “on” state to an “off” state using electric field induced strain.

Recent Progress in Devices Based on Magnetoelectric Composite Thin Films

The strain-driven interfacial coupling between the ferromagnetic and ferroelectric constituents of magnetoelectric (ME) composites makes them potential candidates for novel multifunctional devices. ME composites in the form of thin-film heterostructures show promising applications in miniaturized ME devices. This article reports the recent advancement in ME thin-film devices, such as highly sensitive magnetic field sensors, ME antennas, integrated tunable ME inductors, and ME band-pass filters, is discussed. (Pb1−xZrx)TiO3 (PZT), Pb(Mg1/3Nb2/3)O3-PbTiO3 (PMN-PT), Aluminium nitride (AlN), and Al1−xScxN are the most commonly used piezoelectric constituents, whereas FeGa, FeGaB, FeCo, FeCoB, and Metglas (FeCoSiB alloy) are the most commonly used magnetostrictive constituents in the thin film ME devices. The ME field sensors offer a limit of detection in the fT/Hz1/2 range at the mechanical resonance frequency. However, below resonance, different frequency conversion techniques with AC magnetic or electric fields or the delta-E effect are used. Noise floors of 1–100 pT/Hz1/2 at 1 Hz were obtained. Acoustically actuated nanomechanical ME antennas operating at a very-high frequency as well as ultra-high frequency (0.1–3 GHz) range, were introduced. The ME antennas were successfully miniaturized by a few orders smaller in size compared to the state-of-the-art conventional antennas. The designed antennas exhibit potential application in biomedical devices and wearable antennas. Integrated tunable inductors and band-pass filters tuned by electric and magnetic field with a wide operating frequency range are also discussed along with miniaturized ME energy harvesters.

Boosting Magnetoelectric Effect in Polymer-Based Nanocomposites

Polymer-based magnetoelectric composite materials have attracted a lot of attention due to their high potential in various types of applications as magnetic field sensors, energy harvesting, and biomedical devices. Current researches are focused on the increase in the efficiency of magnetoelectric transformation. In this work, a new strategy of arrangement of clusters of magnetic nanoparticles by an external magnetic field in PVDF and PFVD-TrFE matrixes is proposed to increase the voltage coefficient (αME) of the magnetoelectric effect. Another strategy is the use of 3-component composites through the inclusion of piezoelectric BaTiO3 particles. Developed strategies allow us to increase the αME value from ~5 mV/cm·Oe for the composite of randomly distributed CoFe2O4 nanoparticles in PVDF matrix to ~18.5 mV/cm·Oe for a composite of magnetic particles in PVDF-TrFE matrix with 5%wt of piezoelectric particles. The applicability of such materials as bioactive surface is demonstrated on neural crest stem cell cultures.

Dielectric Relaxation Behavior of BTO/LSMO Heterojunction

The BaTiO3 (BTO)/La0.7Sr0.3MnO3 (LSMO) magnetoelectric composite films were prepared by sol-gel method on STO (001) substrates. The heterojunction has highly preferred orientation and exhibits well ferroelectric properties with perfect hysteresis loops and microscopic polarization switch behaviors. The most interesting thing is the abnormal dielectric relaxation phenomenon in the dielectric spectra at high frequency range and around the phase transition temperature of LSMO. By analyzing the resistance properties of LSMO films, it is indicated that charge-based interfacial coupling, Maxwell-Wagner effect due to the JT polaron and fast resistivity rise in LSMO layer is the main reason. This work emphasizes the crucial role of resistivity exchanges and of carrier accumulation at interfaces for the application of magnetoelectric heterojunction.