scholarly journals Design of a High-Efficiency GaN High-Electron Mobility Transistor Microwave Power Amplifier

2020 ◽  
Vol 30.8 (147) ◽  
pp. 46-50
Author(s):  
Duy Manh Luong ◽  
◽  
Huy Hoang Nguyen
Keyword(s):  
Power Amplifier ◽  
Microwave Power ◽  
Electron Mobility ◽  
High Efficiency ◽  
High Electron Mobility Transistor ◽  
Satellite Communications ◽  
High Electron ◽  
High Electron Mobility ◽  
Power Added Efficiency ◽  
Microwave Power Amplifier

This study presents a design procedure to obtain high-efficiency for microwave power amplifier. The designed amplifier uses a GaN high electron mobility transistor as an active device. Matching networks including input and output networks are realized using Megtron6 substrate microstrip lines. The designed amplifier operates at 2.1 GHz band. The simulated results show that the amplifier delivers a maximum power-added efficiency of 73.2% at output power and power gain of 47.8 dBm and 13.8 dB, respectively. This promising designed performance makes this amplifier to be an excellent candidate for use in modern wireless communication systems like radar, mobile network, and satellite communications.

scholarly journals An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency

Micromachines ◽  
2021 ◽  
Vol 12 (9) ◽  
pp. 1035
Author(s):  
Hujun Jia ◽  
Xiaowei Wang ◽  
Mengyu Dong ◽  
Shunwei Zhu ◽  
Yintang Yang
Keyword(s):  
High Power ◽  
Electron Mobility ◽  
Major Change ◽  
High Electron Mobility Transistor ◽  
High Energy ◽  
High Electron ◽  
High Electron Mobility ◽  
Power Added Efficiency ◽  
Barrier Surface ◽  
P Type

An improved P-type doped barrier surface AlGaN/GaN high electron mobility transistor with high power-added efficiency (PDBS-HEMT) is proposed in this paper. Through the modelling and simulation of ISE-TCAD and ADS software, the influence of the P-type doped region on the performance parameters is studied, and the power-added efficiency (PAE) obtained and effectively improved is further verified. The drain saturation current and the threshold voltage of PDBS-HEMT has no major change compared with the traditional structure; the peak transconductance decreases slightly, but the breakdown voltage is significantly enhanced. Furthermore, the gate-source capacitance and gate-drain capacitance are reduced by 14.6% and 14.3%, respectively. By simulating the RF output characteristics of the device, the maximum oscillation frequency of the proposed structure is increased from 57 GHz to 63 GHz, and the saturated output power density is 10.9 W/mm, 9.3 W/mm and 6.4 W/mm at the frequency of 600 MHz, 1200 MHz and 2400 MHz, respectively. The highest PAE of 88.4% was obtained at 1200 MHz. The results show that the PDBS structure has an excellent power and efficiency output capability. Through the design of the P-type doped region, the DC and RF parameters and efficiency of the device are balanced, demonstrating the great potential of PDBS structure in high energy efficiency applications.

X-Band GaN High Electron Mobility Transistor Power Amplifier on 6H-SiC with 110 W Output Power

2018 ◽  
Vol 18 (11) ◽  
pp. 7451-7454
Author(s):  
Quan Wang ◽  
Xiaoliang Wang ◽  
Hongling Xiao ◽  
Cuimei Wang ◽  
Lijuan Jiang ◽  
...  
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
High Electron ◽  
High Electron Mobility ◽  
X Band

scholarly journals An X-Band 40 W Power Amplifier GaN MMIC Design by Using Equivalent Output Impedance Model

Electronics ◽  
2019 ◽  
Vol 8 (1) ◽  
pp. 99 ◽  
Author(s):  
Ruitao Chen ◽  
Ruchun Li ◽  
Shouli Zhou ◽  
Shi Chen ◽  
Jianhua Huang ◽  
...  
Keyword(s):  
Power Amplifier ◽  
Integrated Circuit ◽  
High Efficiency ◽  
High Electron Mobility Transistor ◽  
Band Pass Filter ◽  
High Electron ◽  
Large Signal ◽  
Pass Filter ◽  
Power Added Efficiency ◽  
X Band

This paper presents an X-band 40 W power amplifier with high efficiency based on 0.25 μm GaN HEMT (High Electron Mobility Transistor) on SiC process. An equivalent RC (Resistance Capacitance) model is presented to provide accurate large-signal output impedances of GaN HEMTs with arbitrary dimensions. By introducing the band-pass filter topology, broadband impedance matching networks are achieved based on the RC model, and the power amplifier MMIC (Monolithic Microwave Integrated Circuit) with enhanced bandwidth is realized. The measurement results show that this power amplifier at 28 V operation voltage achieved over 40 W output power, 44.7% power-added efficiency and 22 dB power gain from 8 GHz to 12 GHz. The total chip size is 3.20 mm × 3.45 mm.

scholarly journals Dual-band doherty power amplifier with improved reactance compensation

2021 ◽  
Vol 23 (3) ◽  
pp. 1550
Author(s):  
Li M. Yu ◽  
Narendra K. Aridas ◽  
Tarik A. Latef
Keyword(s):  
Output Power ◽  
Power Amplifier ◽  
Electron Mobility ◽  
High Electron Mobility Transistor ◽  
Dual Band ◽  
High Electron ◽  
High Electron Mobility ◽  
Term Evolution ◽  
Doherty Power Amplifier

In brief, a dual-band doherty power amplifier employing reactance compensation with gallium nitride high-electron-mobility transistor technology is discussed. This design is developed for long-term evolution (LTE) frequency operation, particularly for the application of two-way radio to improve the efficiency at the back-off point from saturation output power for selected dual frequencies in the LTE bandwidth. Measurements show that the prototype board has enhanced performance at the desired frequencies, namely a saturation output power of 40.5 dBm, and 6 dB back-off efficiencies of 43% and 47%, which exhibit a gain of approximately 10 dB at 0.8 GHz and 2.1 GHz, respectively.

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