Comparison of Various Factors Affected TID Tolerance in FinFET and Nanowire FET

Analysis of the radiation effects in a device is of great importance. The gate all around (GAA) structure that contributes to device scaling not only solves the short channel effects (SCE) problem but also makes the device more resistant in radiation environments. In this article, the total ionizing dose (TID) simulation of nanowire FET (NW) and FinFET was performed. Both these devices were compared and analyzed in terms of the shift of threshold voltage (VT). The channel insulator was composed of two materials, SiO2 and HfO2. To improve the accuracy of the simulation, the interfacial trap parameter of SiO2 and HfO2 was applied. Based on the simulation result, the NW with a larger oxide area and larger gate controllability showed less VT shift than that of the FinFET. It was therefore proved that NW had better TID resistance characteristics in a radiation environment. The gate controllability was found to affect the TID effect more than the oxide area. In addition, we analyzed the manner in which the TID effect changed depending on the VDD and channel doping.

Effect of Electrical Aging on the Trap Parameter of HVAC XLPE Cable Insulation

The effect of electrical aging on the trap parameter of HVAC XLPE cable insulation was investigated in this work. Thermally Stimulated Current (TSC) was used to measure depolarization current. The variation of trap parameter was calculated by means of start-up method based on the Gaussian fitting curve of TSC data. It was found that, the activation energy and the amount of trap charge obtained from TSC peak at 243K and 348K were increased after electrical aging, which may be benefit to characterize the degree of aging. The amount of trap charge in the two peaks increases as the increase of oxide dipole after electrical aging. And charge trapped described by the TSC peak at melting temperature increased after aging. It is considered that the increase of charge in the TSC peak can be attributed to the release of trap charge in the melt crystallization process, which corresponds to the α relaxation process in XLPE insulation.