Post-Lumpectomy/Post-Radiation Breast

Mammography is currently the primary imaging modality for post-operative evaluation and surveillance of the conservatively treated breast. Tumor recurrence has been shown to occur at a rate of approximately 1–2% per year, and the goal of imaging surveillance is to detect recurrent and new cancers at the earliest stages while avoiding unnecessary biopsies for characteristically benign findings. The radiologist should be familiar with the expected mammographic appearance and evolution of benign post-lumpectomy/post-radiation change, while also recognizing findings suspicious for residual and recurrent disease. This chapter, appearing in the section on intervention and surgical changes, reviews the key imaging and clinical features, imaging protocols and pitfalls, and clinical recommendations for the post-lumpectomy and post-radiation breast. Topics discussed include the evolution of benign post-surgical/post-radiation findings and the detection of suspicious lesions. The primary emphasis will be on mammographic surveillance. The role of ultrasound and MRI will also be discussed.

Smart Control Strategy for Small-Scale Photovoltaic Systems Connected to Single-Phase Grids

This research chapter is concerned with the control of a photovoltaic powered plant connected to a single-phase grid. The system is equipped with dc–dc converters, which allow the panels' maximum power point to be tracked, and the voltage at their terminals to be regulated. Power is injected into the grid using an adequate control of a single-phase inverter connected to a filter and loads. In this research chapter, the active and reactive powers are controlled using the Voltage Oriented Control strategy, taking into account the grid and the loads characteristics. The control strategy is tested by simulation, and the obtained results prove its performance even under solar radiation change.

The impact of radiation on semiconducting characteristics of monocrystalline silicon and germanium

The paper examines the effects of radiation on the electrical characteristics of monocrystalline silicon and germanium. Samples of monocrystalline silicon and germanium are irradiated under controlled laboratory conditions in the field of neutron, X- and g-radiation. Change of the samples' specific resistance was measured dependent on the radiation dose with the type of radiation as a parameter. Next, the dependence of the samples resistance on temperature was recorded (in the impurities region and in intrinsic region) with the previously absorbed dose as a parameter. The results were statistically analyzed and explained on the basis of radiation effects in solids. The results are compared with those obtained by using Monte Carlo method. A good agreement was confirmed by the mentioned experimental investigation.