Application of polycrystalline silicon carbide thin films as the passivating contacts for silicon solar cells

2020 ◽  
Vol 206 ◽  
pp. 110329 ◽  
Author(s):  
Zhiyu Xu ◽  
Ke Tao ◽  
Shuai Jiang ◽  
Rui Jia ◽  
Wei Li ◽  
...  
2009 ◽  
Vol 517 (12) ◽  
pp. 3513-3515 ◽  
Author(s):  
Tao Chen ◽  
Yuelong Huang ◽  
Haiyan Wang ◽  
Deren Yang ◽  
Arup Dasgupta ◽  
...  

2022 ◽  
Vol 238 ◽  
pp. 111586
Author(s):  
Jingming Zheng ◽  
Zhenhai Yang ◽  
Linna Lu ◽  
Mengmeng Feng ◽  
Yuyan Zhi ◽  
...  

2013 ◽  
Vol 724-725 ◽  
pp. 151-155
Author(s):  
Peng Wang ◽  
Xian Fang Gou ◽  
Wei Tao Fan ◽  
Chen Cai Sun

In order to improving the conversion efficiency of polycrystalline silicon solar cells, progressive SiNx thin films were deposited on the surface via Roth&Rau plasma-enhanced chemical vapor deposition method. The effects of progressive SiNx thin films, such as surface passivation, anti-reflection, and electrical performance were systematically investigated. Compared with monolayer films, progressive SiNx thin films have better anti-reflective properties in the wavelength range of 300-500 nm, resulting in improvement of the short wavelength absorption of the crystalline silicon solar cells. Moreover, the bottom of progressive SiNx thin films with high refractive index enhances the surface passivation. Thus, higher open-circuit voltage and fill factor could be obtained by this technique.


2005 ◽  
Vol 86 (7) ◽  
pp. 071920 ◽  
Author(s):  
J. J. Bellante ◽  
H. Kahn ◽  
R. Ballarini ◽  
C. A. Zorman ◽  
M. Mehregany ◽  
...  

1980 ◽  
Vol 9 (5) ◽  
pp. 841-856 ◽  
Author(s):  
K. R. Sarma ◽  
R. N. Legge ◽  
R. W. Gurtler

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