A molecular dynamics investigation into nanoscale scratching mechanism of polycrystalline silicon carbide

2018 ◽  
Vol 148 ◽  
pp. 76-86 ◽  
Author(s):  
Yao Liu ◽  
Beizhi Li ◽  
Lingfei Kong
Keyword(s):  
Molecular Dynamics ◽  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide

The effect of grain-size on fracture of polycrystalline silicon carbide: A multiscale analysis using a molecular dynamics-peridynamics framework

2019 ◽  
Vol 159 ◽  
pp. 341-348 ◽  
Author(s):  
Sourav Gur ◽  
Mohammad Rafat Sadat ◽  
George N. Frantziskonis ◽  
Stefan Bringuier ◽  
Lianyang Zhang ◽  
...  
Keyword(s):  
Molecular Dynamics ◽  
Silicon Carbide ◽  
Grain Size ◽  
Polycrystalline Silicon ◽  
Multiscale Analysis ◽  
Polycrystalline Silicon Carbide

Enhanced Ohmic contact via graphitization of polycrystalline silicon carbide

2010 ◽  
Vol 97 (26) ◽  
pp. 262107 ◽  
Author(s):  
F. Liu ◽  
B. Hsia ◽  
C. Carraro ◽  
A. P. Pisano ◽  
R. Maboudian
Keyword(s):  
Silicon Carbide ◽  
Ohmic Contact ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide

Pressure dependence of thin polycrystalline silicon carbide diaphragm resonators

2012 ◽  
Author(s):  
Andrew C. Barnes ◽  
Jaesung Lee ◽  
Patrick T. Rawlinson ◽  
Philip X.-L. Feng ◽  
Christian A. Zorman
Keyword(s):  
Silicon Carbide ◽  
Pressure Dependence ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide ◽  
Thin Polycrystalline

Oxidation of silicon carbide and the formation of silica polymorphs

2006 ◽  
Vol 21 (10) ◽  
pp. 2550-2563 ◽  
Author(s):  
Maxime J-F. Guinel ◽  
M. Grant Norton
Keyword(s):  
Silicon Carbide ◽  
Photoelectron Spectroscopy ◽  
Polycrystalline Silicon ◽  
Ambient Pressure ◽  
Silicon Oxycarbide ◽  
Oxide Scales ◽  
X Ray ◽  
Transmission Electron ◽  
Polycrystalline Silicon Carbide ◽  
Crystalline Films

The oxidation of both single crystal and relatively pure polycrystalline silicon carbide, between 973 and 2053 K, resulted in the formation of cristobalite, quartz, or tridymite, which are the stable crystalline polymorphs of silica (SiO2) at ambient pressure. The oxide scales were found to be pure SiO2 with no contamination resulting from the oxidizing environment. The only variable affecting the occurrence of a specific polymorph was the oxidation temperature. Cristobalite was formed at temperatures ≥1673 K, tridymite between 1073 and 1573 K, and quartz formed at 973 K. The polymorphs were determined using electron diffraction in a transmission electron microscope. These results were further confirmed using infrared and Raman spectroscopies. Cristobalite was observed to grow in a spherulitic fashion from amorphous silica. This was not the case for tridymite and quartz, which appeared to grow as oriented crystalline films. The presence of a thin silicon oxycarbide interlayer was detected at the interface between the SiC substrate and the crystalline silica using x-ray photoelectron spectroscopy.

scholarly journals Effects of High-power Argon Excimer Laser Irradiation on Polycrystalline Silicon Carbide Mirrors.

1992 ◽  
Vol 20 (12) ◽  
pp. 970-979
Author(s):  
Masato OHMUKAI ◽  
Hiroyoshi NAITO ◽  
Masahiro OKUDA ◽  
Kou KUROSAWA ◽  
Wataru SASAKI ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Laser Irradiation ◽  
Excimer Laser ◽  
High Power ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide ◽  
Excimer Laser Irradiation

The wetting of self-bonded polycrystalline silicon carbide by silicon

1977 ◽  
Vol 16 (11) ◽  
pp. 860-862 ◽  
Author(s):  
V. L. Yupko ◽  
G. G. Gnesin ◽  
Yu. P. Dyban' ◽  
T. I. Kuz'mina ◽  
I. E. Polomoshnov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Polycrystalline Silicon ◽  
Polycrystalline Silicon Carbide
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