Nanosphere Lithography for Structuring Polycrystalline Diamond Films

This paper deals with the structuring of polycrystalline diamond thin films using the technique of nanosphere lithography. The presented multistep approaches relied on a spin-coated self-assembled monolayer of polystyrene spheres, which served as a lithographic mask for the further custom nanofabrication steps. Various arrays of diamond nanostructures—close-packed and non-close-packed monolayers over substrates with various levels of surface roughness, noble metal films over nanosphere arrays, ordered arrays of holes, and unordered pores—were created using reactive ion etching, chemical vapour deposition, metallization, and/or lift-off processes. The size and shape of the lithographic mask was altered using oxygen plasma etching. The periodicity of the final structure was defined by the initial diameter of the spheres. The surface morphology of the samples was characterized using scanning electron microscopy. The advantages and limitations of the fabrication technique are discussed. Finally, the potential applications (e.g., photonics, plasmonics) of the obtained nanostructures are reviewed.

Flexible Conductive Polymer Film Grafted with Azo-Moieties and Patterned by Light Illumination with Anisotropic Conductivity

In this work, we present the method for the creation of an anisotropic electric pattern on thin poly(3,4-ethylenedioxythiophene): polystyrene sulfonate (PEDOT:PSS) films through PSS grafting by azo-containing moieties followed by light-induced polymers redistribution. Thin PEDOT:PSS films were deposited on the flexible and biodegradable polylactic acid (PLLA) substrates. The light-sensitive azo-groups were grafted to PSS using the diazonium chemistry followed by annealing in methanol. Local illumination of azo-grafted PEDOT:PSS films through the lithographic mask led to the conversion of azo-moieties in Z-configuration and further creation of the lateral gradient of azo-isomers along the film surface. The concentration gradient led to the migration of PSS away from the illuminated area, increasing the PEDOT chains’ concentration and the corresponding increase of local electrical conductivity in the illuminated place. Utilization of mask with linear pattern results in the appearance of conductive PEDOT-rich and non-conductive PSS-rich lines on the film surface, and final, lateral anisotropy of electric properties. Our work gives an optical lithography-based alternative to common methods for the creation of anisotropic electric properties, based on the spatial confinement of conductive polymer structures or their mechanical strains.

Lithographic Mask Defects Analysis on an MMI 3 dB Splitter

In this paper, we present a simulation study that intends to characterize the influence of defects introduced by manufacturing processes on the geometry of a semiconductor structure suitable to be used as a multimode interference (MMI) 3 dB power splitter. Consequently, these defects will represent refractive index fluctuations which, on their turn, will drastically affect the propagation conditions within the structure. Our simulations were conducted on a software platform that implements the Beam Propagation numerical method. This work supports the development of a biomedical plasmonic sensor, which is based on the coupling between propagating modes in a dielectric waveguide and the surface plasmon mode that is generated on an overlaid metallic thin film, and where the output readout is achieved through an a-Si:H photodiode. By using a multimode interference 1 × 2 power splitter, this sensor device can utilize the non-sensing arm as a reference one, greatly facilitating its calibration and enhancing its performance. As the spectral sensitivity of amorphous silicon is restricted to the visible range, this sensing device should be operating on a wavelength not higher than 700 nm; thus, a-SiNx has been the material hereby proposed for both waveguides and MMI power splitter.

Polymer blend lithography for metal films: large-area patterning with over 1 billion holes/inch2

Polymer blend lithography (PBL) is a spin-coating-based technique that makes use of the purely lateral phase separation between two immiscible polymers to fabricate large area nanoscale patterns. In our earlier work (Huang et al. 2012), PBL was demonstrated for the fabrication of patterned self-assembled monolayers. Here, we report a new method based on the technique of polymer blend lithography that allows for the fabrication of metal island arrays or perforated metal films on the nanometer scale, the metal PBL. As the polymer blend system in this work, a mixture of polystyrene (PS) and poly(methyl methacrylate) (PMMA), dissolved in methyl ethyl ketone (MEK) is used. This system forms a purely lateral structure on the substrate at controlled humidity, which means that PS droplets are formed in a PMMA matrix, whereby both phases have direct contact both to the substrate and to the air interface. Therefore, a subsequent selective dissolution of either the PS or PMMA component leaves behind a nanostructured film which can be used as a lithographic mask. We use this lithographic mask for the fabrication of metal patterns by thermal evaporation of the metal, followed by a lift-off process. As a consequence, the resulting metal nanostructure is an exact replica of the pattern of the selectively removed polymer (either a perforated metal film or metal islands). The minimum diameter of these holes or metal islands demonstrated here is about 50 nm. Au, Pd, Cu, Cr and Al templates were fabricated in this work by metal PBL. The wavelength-selective optical transmission spectra due to the localized surface plasmonic effect of the holes in perforated Al films were investigated and compared to the respective hole diameter histograms.

Fabrication of Spin-Transfer Nano-Oscillator by Colloidal Lithography

We fabricate nanoscale spin-transfer oscillators (STOs) by utilizing colloidal nanoparticles as a lithographic mask. By this approach, high quality STO devices can be fabricated, and as an example the fabricated STO devices using MgO magnetic tunnel junction as the basic cell exhibit current-induced microwave emission with a large frequency tunability of 0.22 GHz/mA. Compared to the conventional approaches that involve a step of defining nanoscale elements by means of electron beam lithography, which is not readily available for many groups, our strategy for STO fabrication does not require the sophisticated equipment (~ million dollars per unit) and expensive lithography resist, while being cost-effective and easy to use in laboratory level. This will accelerate efforts to implement STO into on-chip integrated high-radio frequency applications.