scholarly journals Polymer blend lithography for metal films: large-area patterning with over 1 billion holes/inch2

2015 ◽  
Vol 6 ◽  
pp. 1205-1211 ◽  
Author(s):  
Cheng Huang ◽  
Alexander Förste ◽  
Stefan Walheim ◽  
Thomas Schimmel
Keyword(s):  
Polymer Blend ◽  
Selective Dissolution ◽  
Metal Films ◽  
Large Area ◽  
Minimum Diameter ◽  
Immiscible Polymers ◽  
Lithographic Mask ◽  
Metal Nanostructure ◽  
Lift Off ◽  
Metal Islands

Polymer blend lithography (PBL) is a spin-coating-based technique that makes use of the purely lateral phase separation between two immiscible polymers to fabricate large area nanoscale patterns. In our earlier work (Huang et al. 2012), PBL was demonstrated for the fabrication of patterned self-assembled monolayers. Here, we report a new method based on the technique of polymer blend lithography that allows for the fabrication of metal island arrays or perforated metal films on the nanometer scale, the metal PBL. As the polymer blend system in this work, a mixture of polystyrene (PS) and poly(methyl methacrylate) (PMMA), dissolved in methyl ethyl ketone (MEK) is used. This system forms a purely lateral structure on the substrate at controlled humidity, which means that PS droplets are formed in a PMMA matrix, whereby both phases have direct contact both to the substrate and to the air interface. Therefore, a subsequent selective dissolution of either the PS or PMMA component leaves behind a nanostructured film which can be used as a lithographic mask. We use this lithographic mask for the fabrication of metal patterns by thermal evaporation of the metal, followed by a lift-off process. As a consequence, the resulting metal nanostructure is an exact replica of the pattern of the selectively removed polymer (either a perforated metal film or metal islands). The minimum diameter of these holes or metal islands demonstrated here is about 50 nm. Au, Pd, Cu, Cr and Al templates were fabricated in this work by metal PBL. The wavelength-selective optical transmission spectra due to the localized surface plasmonic effect of the holes in perforated Al films were investigated and compared to the respective hole diameter histograms.

Polymer blend lithography for metal films: large-area patterning with over 1 billion holes/inch2

nano Online ◽  
2016 ◽  
Author(s):  
Cheng Huang ◽  
Förste ◽  
Stefan Walheim ◽  
Thomas Schimmel
Keyword(s):  
Polymer Blend ◽  
Metal Films ◽  
Large Area

Fabrication of large area nanogap electrodes for sensing applications

2013 ◽  
Vol 1530 ◽  
Author(s):  
A. Bendavid ◽  
L. Wieczorek ◽  
R. Chai ◽  
J. S. Cooper ◽  
B. Raguse
Keyword(s):  
Large Scale ◽  
Focused Ion Beam ◽  
Ion Beam ◽  
Beam Current ◽  
Fabrication Method ◽  
Large Area ◽  
Sensor Applications ◽  
Sensing Applications ◽  
Lift Off ◽  
Nanogap Electrodes

ABSTRACTA large area nanogap electrode fabrication method combinig conventional lithography patterning with the of focused ion beam (FIB) is presented. Lithography and a lift-off process were used to pattern 50 nm thick platinum pads having an area of 300 μm × 300 μm. A range of 30-300 nm wide nanogaps (length from 300 μm to 10 mm ) were then etched using an FIB of Ga+ at an acceleration voltage of 30 kV at various beam currents. An investigation of Ga+ beam current ranging between 1-50 pA was undertaken to optimise the process for the current fabrication method. In this study, we used Monte Carlo simulation to calculate the damage depth in various materials by the Ga+. Calculation of the recoil cascades of the substrate atoms are also presented. The nanogap electrodes fabricated in this study were found to have empty gap resistances exceeding several hundred MΩ. A comparison of the gap length versus electrical resistance on glass substrates is presented. The results thus outline some important issues in low-conductance measurements. The proposed nanogap fabrication method can be extended to various sensor applications, such as chemical sensing, that employ the nanogap platform. This method may be used as a prototype technique for large-scale fabrication due to its simple, fast and reliable features.

Alternative Materials for Micro-Electro-Mechanical Device Construction

1992 ◽  
Vol 276 ◽  
Author(s):  
R. H. Hackeit ◽  
L. E. Larson
Keyword(s):  
Plasma Etching ◽  
Silicon Oxide ◽  
Metal Films ◽  
Device Processing ◽  
Low Temperature Processing ◽  
Alternative Materials ◽  
Lift Off ◽  
Mechanical Devices ◽  
Silicon Based ◽  
Process Constraints

ABSTRACTIn order to integrate micro actuators with III-V semiconductor devices, we have devised Micro-Electro-Mechanical devices (MEM's), constructed from materials and processes common to existing III-V device processing. These processes are substantially different from silicon based processes because of the requirements for low temperature processing and the use of gold-based metallizations.Our material choices include, vacuum deposited and plated metal films, silicon oxide and nitride dielectric layers, and polyimide layers and structures. Sacrificial layers are implemented with photoresist rather than the more common silicon dioxide. The processes available are based on the ‘lift off’ of unwanted areas of the metal films, wet plating of metals through openings in photoresist masks, and wet and plasma etching of metals and dielectrics.This paper will discuss why we are using these materials, the process constraints imposed by the materials, the measurement of some of the material properties, and will relate some progress in applications.

Fabrication of large-area GaN Vertical Light Emitting Diodes on Copper Substrates by Laser Lift-off

2004 ◽  
Author(s):  
Fang-I Lai ◽  
Jung-Tang Chu ◽  
Chen-Fu Chu ◽  
Wen-Deng Liang ◽  
H.C. Kuo ◽  
...  
Keyword(s):  
Light Emitting Diodes ◽  
Large Area ◽  
Light Emitting ◽  
Lift Off

MgO-embedded fibre-based substrate as an effective sorbent for toxic organophosphates

RSC Advances ◽  
2014 ◽  
Vol 4 (30) ◽  
pp. 15727-15735 ◽  
Author(s):  
Dong Jin Woo ◽  
S. Kay Obendorf
Keyword(s):  
Metal Oxide ◽  
Cellulose Acetate ◽  
Polymer Blend ◽  
Polyethylene Oxide ◽  
Methyl Parathion ◽  
Metal Oxide Nanoparticles ◽  
Selective Dissolution ◽  
Oxide Nanoparticles ◽  
Effective Sorbent

Metal oxide nanoparticles embedded in a novel electrospun cellulose acetate–polyethylene oxide fibre developed using a co-continuous polymer blend followed by selective dissolution provided enhanced self-decontamination of toxic organophosphates such as methyl parathion.

Performance of Low Resistivity Electrode Prepared by Electroless Plated for Amorphous Silicon Thin-Film Transistors

2007 ◽  
Vol 561-565 ◽  
pp. 1165-1168 ◽  
Author(s):  
Chien Yie Tsay ◽  
Chung Kwei Lin ◽  
Hong Ming Lin ◽  
Shih Chieh Chang ◽  
Bor Chuan Chung
Keyword(s):  
Thin Film ◽  
Thin Films ◽  
Amorphous Silicon ◽  
Large Area ◽  
Silicon Thin Film ◽  
Adhesion Properties ◽  
Low Resistivity ◽  
N2 Atmosphere ◽  
Lift Off ◽  
Processing Steps

The TFTs array fabrication process for large-area TFT-LCD has been continuously developed for simplifying processing steps, improving performance and reducing cost in the process of mass production. In this study, the hydrogenated amorphous silicon (a-Si:H) TFTs with low resistivity electrodes , silver thin films, were prepared by using the selective deposition method that combined lift-off and electroless plated processes. This developed process can direct pattern the electrode of transistor devices without the etching process and provide ease processing steps. The as-deposited Ag films were annealed at 200 oC for 10 minutes under N2 atmosphere. The results shows that the adhesion properties can be enhanced and the resistivity has been improved from 6.0 μ,-cm, significantly decrease by 35%, of as-deposited Ag films by annealed. The thickness of Ag thin film is about 100 nm and the r. m. s roughness value is 1.54 nm. The a-Si:H TFT with Ag thin films as source and drain electrodes had a field effect mobility of 0.18 cm2/Vs, a threshold voltage of 2.65 V, and an on/off ratio of 3×104.

scholarly journals Enhancing the 3rd order nonlinear optical response of integrated micro-ring resonators with graphene oxide 2D films

2021 ◽  
Author(s):  
David Moss
Keyword(s):  
Graphene Oxide ◽  
Pump Power ◽  
Nonlinear Optical ◽  
Kerr Nonlinearity ◽  
Ring Resonators ◽  
Layer By Layer ◽  
Large Area ◽  
Strong Light ◽  
Precise Control ◽  
Lift Off

Abstract Layered two-dimensional (2D) graphene oxide (GO) films are integrated with micro-ring resonators (MRRs) to experimentally demonstrate enhanced nonlinear optics in the form of four-wave mixing (FWM). Both uniformly coated and patterned GO films are integrated on CMOS-compatible doped silica MRRs using a large-area, transfer-free, layer-by-layer GO coating method together with photolithography and lift-off processes, yielding precise control of the film thickness, placement, and coating length. The high Kerr nonlinearity and low loss of the GO films combined with the strong light-matter interaction within the MRRs results in a significant improvement in the FWM efficiency in the hybrid MRRs. Detailed FWM measurements are performed at different pump powers and resonant wavelengths for the uniformly coated MRRs with 1 − 5 layers of GO as well as the patterned devices with 10 − 50 layers of GO. The experimental results show good agreement with theory, achieving up to ~ 7.6-dB enhancement in the FWM conversion efficiency (CE) for an MRR uniformly coated with 1 layer of GO and ~ 10.3-dB for a patterned device with 50 layers of GO. By fitting the measured CE as a function of pump power for devices with different numbers of GO layers, we also extract the dependence of GO’s third-order nonlinearity on layer number and pump power, revealing interesting physical insights about the evolution of the layered GO films from 2D monolayers to quasi bulk-like behavior. These results confirm the high nonlinear optical performance of integrated photonic resonators incorporated with 2D layered GO films.

Metal Line Interconnects Produced by Means of Printable Copper Precursor Solutions

2006 ◽  
Author(s):  
Manish Tiwari ◽  
Constantine Megaridis ◽  
Prodyut Majumder ◽  
Christos Takoudis ◽  
John Belot ◽  
...  
Keyword(s):  
Cost Savings ◽  
Metal Films ◽  
Environmental Benefits ◽  
Large Area ◽  
Metal Line ◽  
Printed Circuits ◽  
Damascene Process ◽  
Planar Substrate ◽  
Wide Range ◽  
Printing Techniques

Patterned metal films are essential to a wide range of applications, from printed circuits and thin film displays in large area electronics, to electrodes in biomedical implants. Current fabrication techniques are usually photolithographic, and rely on either patterning a blanket metal film or patterning a planar substrate into which the metal is deposited, followed by polishing away excess metal (the "Damascene" process). However, photolithographic techniques are expensive and more suitable for relatively small substrates. Conventional printing techniques such as inkjet, flexographic, offset and screen printing for both printable metal films and emergent organic elements, have lower resolution, but offer advantages of flexibility, overall cost savings, scalability to large substrates or those with complex topologies. In addition, these methods have environmental benefits [1].

Enhanced optical four-wave-mixing in integrated ring resonators with graphene oxide films

2020 ◽  
Author(s):  
David Moss ◽  
Jiayang Wu ◽  
xingyuan xu ◽  
Yunyi Yang ◽  
linnan jia ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Pump Power ◽  
Kerr Nonlinearity ◽  
Four Wave Mixing ◽  
Ring Resonators ◽  
Layer By Layer ◽  
Wave Mixing ◽  
Large Area ◽  
Strong Light ◽  
Lift Off

Layered two-dimensional (2D) graphene oxide (GO) films are integrated with micro-ring resonators (MRRs) to experimentally demonstrate enhanced nonlinear optics in the form of four-wave mixing (FWM). Both uniformly coated and patterned GO films are integrated on CMOS-compatible doped silica MRRs using a large-area, transfer-free, layer-by-layer GO coating method together with photolithography and lift-off processes, yielding precise control of the film thickness, placement, and coating length. The high Kerr nonlinearity and low loss of the GO films combined with the strong light-matter interaction within the MRRs results in a significant improvement in the FWM efficiency in the hybrid MRRs. Detailed FWM measurements are performed at different pump powers and resonant wavelengths for the uniformly coated MRRs with 1−5 layers of GO as well as the patterned devices with 10−50 layers of GO. The experimental results show good agreement with theory, achieving up to ~7.6-dB enhancement in the FWM conversion efficiency (CE) for an MRR uniformly coated with 1 layer of GO and ~10.3-dB for a patterned device with 50 layers of GO. By fitting the measured CE as a function of pump power for devices with different numbers of GO layers, we also extract the dependence of GO’s third-order nonlinearity on layer number and pump power, revealing interesting physical insights about the evolution of the layered GO films from 2D monolayers to quasi bulk-like behavior. These results confirm the high nonlinear optical performance of integrated photonic resonators incorporated with 2D layered GO films.

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