Plasmon polariton localized at the metallized boundary of uniaxial crystal

The new analytical theory is developed describing propagation of plasmon polariton localized at the interface between a dielectric uniaxial crystal and an isotropic metal. The theory relates to the crystal cut choice corresponding to the sagittal plane parallel to the optical axis. For this geometry the compact dispersion equation is derived admitting exact explicit solutions for all physical parameters of the plasmon polariton for an arbitrary slope of the optical axis to the interface plane. Results are illustrated for a series of uniaxial crystals with gold coatings.

A New Yield Function of Isotropic Metals Included One to Six-order Plastic Tensors

The yield function is very important in establishing the plastic constitutive relation and analyzing the plastic deformation. Hence, expanded on the general yield function in its Taylor to six-order plastic tensors, this article gives a new yield function on isotropic metal. Based on independent properties of the hydrostatic pressure for metal yield, such as derivation character, mechanical property invariance of isotropic metal etc ., these plastic tensors are analyzed as traceless, totally symmetric and objective. And the yield function for isotropic metals can be degenerated to the one for identical and different property of tension-compression yield. Finally, by means of the results of Lode test, it is proved that the new yield function is quite suitable for those metal materials having both the identical and different properties of tensioncompression yield. There are many merits of this yield function, such as it includes only 2 parameters for material, i.e. simple form and generality etc . And this yield function will lay a theoretical foundation for analyzing mechanical properties of metal materials.

A Theoretical Study on Electron Tunneling Current in Isotropic High-κ Dielectric Stack-Based MOS Capacitors with Charge Trapping

Electron tunneling current in an isotropic metal-oxide-semiconductor (MOS) capacitor with a high-κ dielectric stack has been studied by considering the effect of charge trapping. The transmittance was analytically calculated by employing an Airy-wavefunction approach and including a coupling term between the transverse and longitudinal kinetic energies which is represented by an electron phase velocity in the gate. The transmittance was then applied to obtain tunneling currents in isotropic n+poly-Si/HfSiOxN/trap/SiO2/Si (100) MOS capacitors for different electron gate phase velocities and trap depths and widths. The calculated results show that the transmittance and tunneling current increase as the electron gate velocity decreases. In addition, the increase in the trap depth and width enhances the tunneling current.

Porous coordination polymers constructed from anisotropic metal–carboxylate–pyridyl clusters

While isotropic metal–carboxylate clusters as secondary building blocks have enabled the rational design of porous coordination polymers (PCPs) with predictable topologies, augmented metal–carboxylate–pyridyl clusters can be used as anisotropic secondary building blocks to facilitate the construction of higher-connectivity frameworks and control over structural directionality in self-assembly.