nanoscale dynamics
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2021 ◽  
pp. 101029
Author(s):  
Zachary K. Haviland ◽  
Daguan Nong ◽  
Kate L. Vasquez Kuntz ◽  
Thomas J. Starr ◽  
Dengbo Ma ◽  
...  

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Peco Myint ◽  
Karl F. Ludwig ◽  
Lutz Wiegart ◽  
Yugang Zhang ◽  
Andrei Fluerasu ◽  
...  

2021 ◽  
Vol 103 (19) ◽  
Author(s):  
Peco Myint ◽  
Karl F. Ludwig ◽  
Lutz Wiegart ◽  
Yugang Zhang ◽  
Andrei Fluerasu ◽  
...  

2021 ◽  
Author(s):  
Jennyfer Trouve ◽  
André Zapun ◽  
Christopher Arthaud ◽  
Claire Durmort ◽  
Anne Marie Di Guilmi ◽  
...  

2021 ◽  
Author(s):  
Yukio Takahashi ◽  
Shuntaro Takazawa ◽  
Jungmin Kang ◽  
Masaki Abe ◽  
Hideshi Uematsu ◽  
...  

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Qianwei Huang ◽  
Zibin Chen ◽  
Matthew J. Cabral ◽  
Feifei Wang ◽  
Shujun Zhang ◽  
...  

AbstractFailure of polarization reversal, i.e., ferroelectric degradation, induced by cyclic electric loadings in ferroelectric materials, has been a long-standing challenge that negatively impacts the application of ferroelectrics in devices where reliability is critical. It is generally believed that space charges or injected charges dominate the ferroelectric degradation. However, the physics behind the phenomenon remains unclear. Here, using in-situ biasing transmission electron microscopy, we discover change of charge distribution in thin ferroelectrics during cyclic electric loadings. Charge accumulation at domain walls is the main reason of the formation of c domains, which are less responsive to the applied electric field. The rapid growth of the frozen c domains leads to the ferroelectric degradation. This finding gives insights into the nature of ferroelectric degradation in nanodevices, and reveals the role of the injected charges in polarization reversal.


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