scholarly journals Observation of the crossover between metallic and insulating regimes of the spin Hall effect

2022 ◽  
Vol 5 (1) ◽  
Author(s):  
Hiroyuki Moriya ◽  
Akira Musha ◽  
Satoshi Haku ◽  
Kazuya Ando
Keyword(s):  
Hall Effect ◽  
Condensed Matter ◽  
Spin Hall Effect ◽  
Large Collection ◽  
Universal Scaling ◽  
Berry Curvature ◽  
Hall Effects ◽  
Fundamental Understanding ◽  
Spin Hall Effects ◽  
Theoretical Results

AbstractThe physics of the anomalous and spin Hall effects is one of the most intriguing aspects of condensed matter physics. An important finding from a large collection of experimental and theoretical results is the universal scaling of the anomalous or spin Hall conductivity with the electric conductivity. This scaling has been successfully described by the intrinsic Berry curvature and extrinsic scattering mechanisms for metallic systems, revealing the topological nature of these effects. In contrast, the underlying physics in the opposite limit, the disordered insulating regime, is still unclear. In particular, it remains a major challenge, both experimentally and theoretically, to explore the spin Hall effect in the insulating regime. Here, we report the observation of the crossover between the metallic and insulating regimes of the spin Hall effect. The result demonstrates a direct correspondence between the spin and anomalous Hall effects, which will advance the fundamental understanding of spin transport.

scholarly journals Observation of the crossover between metallic and insulating regimes of the spin Hall effect

2021 ◽  
Author(s):  
Hiroyuki Moriya ◽  
Akira Musha ◽  
Satoshi Haku ◽  
Kazuya Ando
Keyword(s):  
Hall Effect ◽  
Condensed Matter ◽  
Spin Hall Effect ◽  
Large Collection ◽  
Essential Information ◽  
Berry Curvature ◽  
Hall Effects ◽  
Fundamental Understanding ◽  
Spin Hall Effects ◽  
Theoretical Results

Abstract The physics of the anomalous and spin Hall effects is one of the most intriguing aspects of condensed matter physics. An important finding from a large collection of experimental and theoretical results is the universal scaling of the anomalous or spin Hall conductivity with the electric conductivity. This scaling has been successfully described by the intrinsic Berry curvature and extrinsic scattering mechanisms for metallic systems, revealing the topological nature of these effects. In contrast, the underlying physics in the opposite limit, the disordered insulating regime, is still unclear. In particular, it remains a major challenge to explore the spin Hall effect in the insulating regime. Here, we report the observation of the crossover between the metallic and insulating regimes of the spin Hall effect. The result demonstrates an important correspondence between the spin and anomalous Hall effects, which provides essential information for the fundamental understanding of spin transport.

scholarly journals Anomalous spin Hall and inverse spin Hall effects in magnetic systems

2021 ◽  
Vol 4 (1) ◽  
Author(s):  
X. R. Wang
Keyword(s):  
Hall Effect ◽  
Order Parameter ◽  
Spin Current ◽  
Spin Hall Effect ◽  
Magnetic Systems ◽  
Charge Current ◽  
Spin Currents ◽  
Tensor Quantity ◽  
Hall Effects ◽  
Spin Hall Effects

AbstractSpin current is a very important tensor quantity in spintronics. However, the well-known spin-Hall effect (SHE) can only generate a few of its components whose propagating and polarization directions are perpendicular with each other and to an applied charge current. It is highly desirable in applications to generate spin currents whose polarization can be in any possible direction. Here anomalous SHE and inverse spin-Hall effect (ISHE) in magnetic systems are predicted. Spin currents, whose polarisation and propagation are collinear or orthogonal with each other and along or perpendicular to the charge current, can be generated, depending on whether the applied charge current is along or perpendicular to the order parameter. In anomalous ISHEs, charge currents proportional to the order parameter can be along or perpendicular to the propagating or polarization directions of the spin current.

INTRINSIC SPIN HALL EFFECT IN MESOSCOPIC SYSTEMS

2006 ◽  
Vol 20 (17) ◽  
pp. 2339-2358 ◽  
Author(s):  
L. SHENG ◽  
C. S. TING
Keyword(s):  
Green’S Function ◽  
Hall Effect ◽  
Numerical Method ◽  
Green's Function ◽  
Theoretical Aspect ◽  
Spin Hall Effect ◽  
Function Approach ◽  
Mesoscopic Systems ◽  
Hall Effects ◽  
Spin Hall Effects

The intrinsic spin Hall effect has been attracting increasing theoretical and experimental interest since its discovery about two years ago. In this article, we review the main achievements in the theoretical aspect of both dissipative and nondissipative spin Hall effects in mesoscopic systems. The Landauer–Büttiker formula and Green's function approach based numerical method for the spin Hall effect is also introduced.

scholarly journals Interface-induced sign reversal of the anomalous Hall effect in magnetic topological insulator heterostructures

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Fei Wang ◽  
Xuepeng Wang ◽  
Yi-Fan Zhao ◽  
Di Xiao ◽  
Ling-Jie Zhou ◽  
...  
Keyword(s):  
Hall Effect ◽  
Electric Fields ◽  
First Principles ◽  
Berry Phase ◽  
Condensed Matter ◽  
Anomalous Hall Effect ◽  
First Principles Calculations ◽  
Sign Reversal ◽  
Berry Curvature ◽  
Topological Materials

AbstractThe Berry phase picture provides important insights into the electronic properties of condensed matter systems. The intrinsic anomalous Hall (AH) effect can be understood as the consequence of non-zero Berry curvature in momentum space. Here, we fabricate TI/magnetic TI heterostructures and find that the sign of the AH effect in the magnetic TI layer can be changed from being positive to negative with increasing the thickness of the top TI layer. Our first-principles calculations show that the built-in electric fields at the TI/magnetic TI interface influence the band structure of the magnetic TI layer, and thus lead to a reconstruction of the Berry curvature in the heterostructure samples. Based on the interface-induced AH effect with a negative sign in TI/V-doped TI bilayer structures, we create an artificial “topological Hall effect”-like feature in the Hall trace of the V-doped TI/TI/Cr-doped TI sandwich heterostructures. Our study provides a new route to create the Berry curvature change in magnetic topological materials that may lead to potential technological applications.

scholarly journals 3D quantum Hall effects and nonlinear Hall effect

2021 ◽  
Vol 6 (1) ◽  
Author(s):  
Shuai Li ◽  
C. M. Wang ◽  
Z. Z. Du ◽  
Fang Qin ◽  
Hai-Zhou Lu ◽  
...  
Keyword(s):  
Hall Effect ◽  
Condensed Matter ◽  
Quantum Hall ◽  
Future Research ◽  
Research Directions ◽  
New Members ◽  
Quantum Hall Effects ◽  
Open Questions ◽  
Hall Effects ◽  
Future Research Directions

AbstractThe classical and quantum Hall effects are important subjects in condensed matter physics. The emergent 3D quantum Hall effects and nonlinear Hall effect have attracted considerable interest recently, with the former elevating the quantum Hall effect to a higher dimension and the latter extending the Hall effect to higher-order responses. In this perspective, we briefly introduce these two new members of the Hall family and discuss the open questions and future research directions.

Effect of trigonal warping on the Berry curvature and valley/spin Hall effects in monolayer MoS2

2020 ◽  
Vol 384 (17) ◽  
pp. 126344 ◽  
Author(s):  
Wang Chen ◽  
Xiaoying Zhou ◽  
Pu Liu ◽  
Xianbo Xiao ◽  
Guanghui Zhou
Keyword(s):  
Monolayer Mos2 ◽  
Berry Curvature ◽  
Hall Effects ◽  
Trigonal Warping ◽  
Spin Hall Effects

Spin-injection Hall effect

2017 ◽  
Author(s):  
J. Wunderlich ◽  
K. Olejník ◽  
L. P. Zârbo ◽  
V. P. Amin ◽  
J. Sinova ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Injection ◽  
Anomalous Hall Effect ◽  
Relative Strength ◽  
Spin Hall Effect ◽  
Quasi Particle ◽  
Hall Effects ◽  
Spin Polarized ◽  
Inverse Spin Hall Effect ◽  
Current Flows

This chapter discusses the Spin-injection Hall effect (SiHE), another member of the spin-dependent Hall effects that is closely related to the anomalous Hall effect (AHE), the spin Hall effect (SHE), and the inverse spin Hall effect (iSHE). The microscopic origins responsible for the appearance of spin-dependent Hall effects are due to the spin-orbit (SO) coupling-related asymmetrical deflections of spin carriers. Depending on the relative strength of the SO coupling compared to the energy-level broadening of the quasi-particle states due to disorder scattering, scattering-related extrinsic mechanisms or intrinsic band structure-related deflection dominate the spin-dependent Hall response. Both the iSHE and the SiHE require spin injection into a nonmagnetic system. Similar to the AHE, a spin-polarized charge current flows in the case of the SiHE and the SO coupling generates the spin-dependent Hall signal.

scholarly journals Tunable Berry curvature and valley and spin Hall effect in bilayer MoS2

2018 ◽  
Vol 98 (3) ◽  
Author(s):  
Andor Kormányos ◽  
Viktor Zólyomi ◽  
Vladimir I. Fal'ko ◽  
Guido Burkard
Keyword(s):  
Hall Effect ◽  
Spin Hall Effect ◽  
Berry Curvature

scholarly journals Giant intrinsic spin Hall effect in W3Ta and other A15 superconductors

2019 ◽  
Vol 5 (4) ◽  
pp. eaav8575 ◽  
Author(s):  
E. Derunova ◽  
Y. Sun ◽  
C. Felser ◽  
S. S. P. Parkin ◽  
B. Yan ◽  
...  
Keyword(s):  
Hall Effect ◽  
Spin Current ◽  
Spin Hall Effect ◽  
High Symmetry ◽  
Spin Orbit Coupling ◽  
Spin Orbit ◽  
Berry Curvature ◽  
Heavy Atoms ◽  
Simple Strategy ◽  
Nonmagnetic Metals

The spin Hall effect (SHE) is the conversion of charge current to spin current, and nonmagnetic metals with large SHEs are extremely sought after for spintronic applications, but their rarity has stifled widespread use. Here, we predict and explain the large intrinsic SHE in β-W and the A15 family of superconductors: W3Ta, Ta3Sb, and Cr3Ir having spin Hall conductivities (SHCs) of −2250, −1400, and 1210 ℏe(S/cm), respectively. Combining concepts from topological physics with the dependence of the SHE on the spin Berry curvature (SBC) of the electronic bands, we propose a simple strategy to rapidly search for materials with large intrinsic SHEs based on the following ideas: High symmetry combined with heavy atoms gives rise to multiple Dirac-like crossings in the electronic structure; without sufficient symmetry protection, these crossings gap due to spin-orbit coupling; and gapped crossings create large SBC.

scholarly journals Quantum theory of the nonlinear Hall effect

2021 ◽  
Vol 12 (1) ◽  
Author(s):  
Z. Z. Du ◽  
C. M. Wang ◽  
Hai-Peng Sun ◽  
Hai-Zhou Lu ◽  
X. C. Xie
Keyword(s):  
Quantum Theory ◽  
Hall Effect ◽  
Decisive Role ◽  
Nonlinear Conductivity ◽  
Berry Curvature ◽  
Diagrammatic Technique ◽  
Hall Effects ◽  
The Family ◽  
Point Groups ◽  
The One

AbstractThe nonlinear Hall effect is an unconventional response, in which a voltage can be driven by two perpendicular currents in the Hall-bar measurement. Unprecedented in the family of the Hall effects, it can survive time-reversal symmetry but is sensitive to the breaking of discrete and crystal symmetries. It is a quantum transport phenomenon that has deep connection with the Berry curvature. However, a full quantum description is still absent. Here we construct a quantum theory of the nonlinear Hall effect by using the diagrammatic technique. Quite different from nonlinear optics, nearly all the diagrams account for the disorder effects, which play decisive role in the electronic transport. After including the disorder contributions in terms of the Feynman diagrams, the total nonlinear Hall conductivity is enhanced but its sign remains unchanged for the 2D tilted Dirac model, compared to the one with only the Berry curvature contribution. We discuss the symmetry of the nonlinear conductivity tensor and predict a pure disorder-induced nonlinear Hall effect for point groups C3, C3h, C3v, D3h, D3 in 2D, and T, Td, C3h, D3h in 3D. This work will be helpful for explorations of the topological physics beyond the linear regime.

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