Prediction of the surface and interface stress of metallic elements

Vacuum ◽  
2021 ◽  
pp. 110428
Author(s):  
Hongchao Sheng ◽  
Rui Gao ◽  
Beibei Xiao ◽  
Xiaobao Jiang
Keyword(s):  
Interface Stress ◽  
Metallic Elements ◽  
Surface And Interface

scholarly journals Nanoparticles and the influence of interface elasticity

2008 ◽  
Vol 35 (1-3) ◽  
pp. 267-286 ◽  
Author(s):  
Mi Changwen ◽  
Demitris Kouris
Keyword(s):  
Material Properties ◽  
Axial Symmetry ◽  
Outer Boundary ◽  
Elastic Field ◽  
Interface Stress ◽  
Axially Symmetric ◽  
Displacement Potential ◽  
Surface And Interface ◽  
Stress Effects ◽  
Interface Elasticity

In this manuscript, we discuss the influence of surface and interface stress on the elastic field of a nanoparticle, embedded in a finite spherical substrate. We consider an axially symmetric traction field acting along the outer boundary of the substrate and a non-shear uniform eigenstrain field inside the particle. As a result of axial symmetry, two Papkovitch-Neuber displacement potential functions are sufficient to represent the elastic solution. The surface and interface stress effects are fully represented utilizing Gurtin and Murdoch's theory of surface and interface elasticity. These effects modify the traction-continuity boundary conditions associated with the classical continuum elasticity theory. A complete methodology is presented resulting in the solution of the elastostatic Navier's equations. In contrast to the classical solution, the modified version introduces additional dependencies on the size of the nanoparticles as well as the surface and interface material properties.

INTRINSIC SURFACE AND INTERFACE STRESS OF LOW-DIMENSIONAL CRYSTALS

2002 ◽  
Vol 16 (01n02) ◽  
pp. 64-70 ◽  
Author(s):  
Q. JIANG ◽  
D. S. ZHAO ◽  
M. ZHAO
Keyword(s):  
Theoretical Consideration ◽  
Size Dependence ◽  
Interface Energy ◽  
Liquid Interface ◽  
Interface Stress ◽  
Surface And Interface ◽  
Low Dimensional ◽  
Solid Liquid Interface ◽  
Solid Liquid ◽  
Theoretical Results

Based on the theoretical consideration on the size-dependence of solid-liquid interface energy, a model for the intrinsic interface stress of metallic, ionic and semiconductor nanosolid has been developed, free from adjustable parameters. Modeling predictions agree well with experimental observations and other theoretical results.

Interface Stresses in Nanostructured Multilayered Materials

1995 ◽  
Vol 405 ◽  
Author(s):  
R. C. Cammarata ◽  
K. Sieradzki
Keyword(s):  
Simple Model ◽  
Mechanical Behavior ◽  
Nanostructured Materials ◽  
Interface Stress ◽  
Solid Surfaces ◽  
Thermodynamic Quantities ◽  
Surface And Interface ◽  
Surfaces And Interfaces ◽  
Multilayered Materials

AbstractSurface and interface stresses, which are intrinsic thermodynamic quantities associated with all types of solid surfaces and interfaces are reviewed. A simple model for one type of interface stress is presented. These stresses can strongly influence the structure and mechanical behavior of nanostructured materials such as multilayered materials withultrathin layer thicknesses.

Surface and Interface Stress in Epitaxial Growth

1996 ◽  
Vol 440 ◽  
Author(s):  
H. Ibach ◽  
A. Grossmann.
Keyword(s):  
Charge Transfer ◽  
Epitaxial Growth ◽  
Surface Stress ◽  
Critical Thickness ◽  
Lattice Mismatch ◽  
Interface Stress ◽  
Experimental Measurements ◽  
Surface And Interface ◽  
Large Factor

AbstractRecent experimental measurements on the interface stresses in two heteroepitaxial systems have shown that the interface stresses were unexpectedly large. For thin deposited layers, the interface stress can exceed the stress caused by the lattice mismatch by far. Arguments are presented which indicate that the surface stress may be caused by the charge transfer between the deposit and the substrate. The consequences for the critical thickness of pseudomorphic films are discussed and it is shown that depending on the sign of the interface stress and the mismatch the critical thickness can be either reduced or enhanced by a large factor.

Nucleation and initial growth of Pd2Si crystals on Si(111)

1993 ◽  
Vol 51 ◽  
pp. 844-845
Author(s):  
Xianghong Tong ◽  
Oliver Pohland ◽  
J. Murray Gibson
Keyword(s):  
High Vacuum ◽  
Dark Field ◽  
Ultra High Vacuum ◽  
Initial Growth ◽  
Surface And Interface ◽  
Dark Field Imaging ◽  
Transmission Electron ◽  
Initial Stage ◽  
Effect Of Surface

The nucleation and initial stage of Pd2Si crystals on Si(111) surface is studied in situ using an Ultra-High Vacuum (UHV) Transmission Electron Microscope (TEM). A modified JEOL 200CX TEM is used for the study. The Si(111) sample is prepared by chemical thinning and is cleaned inside the UHV chamber with base pressure of 1x10−9 τ. A Pd film of 20 Å thick is deposited on to the Si(111) sample in situ using a built-in mini evaporator. This room temperature deposited Pd film is thermally annealed subsequently to form Pd2Si crystals. Surface sensitive dark field imaging is used for the study to reveal the effect of surface and interface steps.The initial growth of the Pd2Si has three stages: nucleation, growth of the nuclei and coalescence of the nuclei. Our experiments shows that the nucleation of the Pd2Si crystal occurs randomly and almost instantaneously on the terraces upon thermal annealing or electron irradiation.

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