Simulation of characteristic variation in 16 nm gate FinFET devices due to intrinsic parameter fluctuations

2010 ◽  
Vol 21 (9) ◽  
pp. 095203 ◽  
Author(s):  
Yiming Li ◽  
Chih-Hong Hwang ◽  
Ming-Hung Han
Keyword(s):  
Intrinsic Parameter ◽  
Characteristic Variation ◽  
Intrinsic Parameter Fluctuations

IMPACT OF INTRINSIC PARAMETER FLUCTUATIONS IN NANO-CMOS DEVICES ON CIRCUITS AND SYSTEMS

2007 ◽  
Vol 17 (03) ◽  
pp. 501-508
Author(s):  
SCOTT ROY ◽  
BINJIE CHENG ◽  
ASEN ASENOV
Keyword(s):  
Gate Length ◽  
Design Tools ◽  
Intrinsic Parameter ◽  
Stochastic Nature ◽  
Device Mismatch ◽  
Novel Technology ◽  
Starting Point ◽  
And Performance ◽  
The Impact ◽  
Intrinsic Parameter Fluctuations

Device parameter fluctuations, which arise from both the stochastic nature of the manufacturing process and more fundamentally from the intrinsic discreteness of charge and matter, are a dominant source of device mismatch in nano-CMOS devices, and a bottleneck to the future yield and performance of circuits and systems. The impact of such parameter fluctuations is investigated for circuits — with a specific exemplar of 6-T SRAM — whose devices scale from 35 nm gate length. We posit a change in design approach to include the use of statistical compact models as a starting point for the development of cell libraries containing fluctuation information necessary for design under the constraints of parameter fluctuations, and novel Technology Aided System Design tools.

Intrinsic Parameter Fluctuations in Conventional MOSFETs at the Scaling Limit: A Statistical Study

2004 ◽  
Vol 3 (3-4) ◽  
pp. 203-206 ◽  
Author(s):  
Fikru Adamu-Lema ◽  
Gareth Roy ◽  
Andrew R. Brown ◽  
Asen Asenov ◽  
Scott Roy
Keyword(s):  
Statistical Study ◽  
Scaling Limit ◽  
Intrinsic Parameter ◽  
Intrinsic Parameter Fluctuations
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