The nucleation and expansion of Shockley stacking faults (SSFs) in 4H-SiC is known to
induce an increase in the forward voltage drop (Vf) of bipolar devices such as pin diodes. However,
recent annealing experiments have shown that SSFs can not only expand, but that low temperature
annealing (210-7000C) induces a contraction of the SSFs that is coupled with a full and repeatable
recovery of the Vf drift. Here we report that following extended periods of forward bias operation that
the Vf drift of 10kV 4H-SiC pin diodes saturates, with the saturation Vf drift dropping with increasing
stressing temperature. Upon reaching saturation, increases in temperature during forward bias
operation at the same injection conditions also lead to a partial recovery of the Vf drift. Furthermore,
the magnitude of this current-induced recovery is dependent upon the injection current, as reductions
in the current cause a slower, but larger overall Vf drift recovery. All of these results clearly indicate
that the current driving force models for SSF expansion are either incomplete or incorrect and that
further efforts are required for a more complete understanding of SSF dynamics to be obtained.