High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

2006 ◽  
Vol 527-529 ◽  
pp. 1355-1358 ◽  
Author(s):  
Brett A. Hull ◽  
Mrinal K. Das ◽  
Jim Richmond ◽  
Bradley Heath ◽  
Joseph J. Sumakeris ◽  
...  
Keyword(s):  
Pin Diode ◽  
High Current ◽  
Power Module ◽  
Temperature Dependent ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Blocking Voltage ◽  
Chip Size ◽  
Switching Characteristics ◽  
Vf Drift

Forward voltage (VF) drift, in which a 4H-SiC PiN diode suffers from an irreversible increase in VF under forward current flow, continues to inhibit commercialization of 4H-SiC PiN diodes. We present our latest efforts at fabricating high blocking voltage (6 kV), high current (up to 50 A) 4H-SiC PiN diodes with the best combination of reverse leakage current (IR), forward voltage at rated current (VF), and VF drift yields. We have achieved greater than 60% total die yield onwafer for 50 A diodes with a chip size greater than 0.7 cm2. A comparison of the temperature dependent conduction and switching characteristics between a 50 A/6 kV 4H-SiC PiN diode and a commercially available 60 A/4.5 kV Si PiN diode is also presented.

Transient Electrical Characteristics of Electron Irradiated High Blocking Voltage 4H-SiC Pin Diode

2012 ◽  
Vol 717-720 ◽  
pp. 965-968 ◽  
Author(s):  
Katsunori Asano ◽  
Atsushi Tanaka ◽  
Shuuji Ogata ◽  
Koji Nakayama ◽  
Yoichi Miyanagi
Keyword(s):  
Electron Irradiation ◽  
Recovery Time ◽  
Pin Diode ◽  
Electrical Characteristics ◽  
Forward Voltage ◽  
Electron Dose ◽  
Pin Diodes ◽  
Blocking Voltage ◽  
Heavy Electron ◽  
Reverse Recovery Time

The transient electrical characteristics of the forward recovery and reverse recovery characteristics of lifetime-controlled high blocking voltage 4H-SiC pin diodes by electron irradiation are investigated. Even at a heavy electron dose of 1×1014 cm-2, the forward voltage overshoot of a 4H-SiC pin diode is lower than that of a 2 kV/100 A class Si fast diode. As for the reverse recovery characteristics, small reverse recovery current and fast reverse recovery time are obtained by electron irradiation. The reduction ratio of recovery loss can therefore exceed the increase ratio of steady-state loss by electron irradiation.

13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications

2014 ◽  
Vol 778-780 ◽  
pp. 855-858 ◽  
Author(s):  
Dai Okamoto ◽  
Yasunori Tanaka ◽  
Tomonori Mizushima ◽  
Mitsuru Yoshikawa ◽  
Hiroyuki Fujisawa ◽  
...  
Keyword(s):  
Power System ◽  
High Voltage ◽  
Light Emission ◽  
Voltage Drop ◽  
High Current ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Current Switching ◽  
Forward Voltage Drop

We successfully fabricated 13-kV, 20-A, 8 mm × 8 mm, drift-free 4H-SiC PiN diodes. The fabricated diodes exhibited breakdown voltages that exceeded 13 kV, a forward voltage drop of 4.9–5.3 V, and an on-resistance (RonAactive) of 12 mW·cm2. The blocking yield at 10 kV on a 3-in wafer exceeded 90%. We investigated failed devices using Candela defect maps and light-emission images and found that a few devices failed because of large defects on the chip. We also demonstrated that the fabricated diodes can be used in conducting high-voltage and high-current switching tests.

High Current 6 kV 4H-SiC PiN Diodes for Power Module Switching Applications

2006 ◽  
pp. 1355-1358 ◽  
Author(s):  
Brett A. Hull ◽  
Mrinal K. Das ◽  
James Richmond ◽  
Bradley Heath ◽  
Joseph J. Sumakeris ◽  
...  
Keyword(s):  
High Current ◽  
Power Module ◽  
Pin Diodes

Demonstration of 13-kV Class Junction Barrier Schottky Diodes in 4H-SiC with Three-Zone Junction Termination Extension

2017 ◽  
Vol 897 ◽  
pp. 451-454 ◽  
Author(s):  
Hidenori Kitai ◽  
Yasuo Hozumi ◽  
Hiromu Shiomi ◽  
Masaki Furumai ◽  
Kazuhiko Omote ◽  
...  
Keyword(s):  
Computer Aided Design ◽  
Schottky Diodes ◽  
Pin Diode ◽  
Current Waveform ◽  
Forward Voltage ◽  
Sharp Drop ◽  
Forward Current ◽  
Blocking Voltage ◽  
Aided Design ◽  
Breakdown Model

The static and dynamic characteristics of 13-kV class 4H-SiC junction barrier Schottky (JBS) diodes with a three-zone junction termination extension (JTE) are presented. Using an anisotropy breakdown model, technology computer-aided design simulation of devices with a three-zone JTE agrees well with the obtained experimental results, correctly predicting a sharp drop in blocking voltage at high JTE acceptor concentrations. The forward voltage of the JBS diode at 75°C and a forward current of 500 mA is reduced to approximately one-ninth by that of 13 series-connected 1000-V Si PiN diodes. This suggests that conduction losses of traditional high-voltage circuits which conventionally use series-connected devices can be drastically reduced by replacing the series-connected devices with a single 13-kV class SiC JBS diode. Moreover, the reverse recovery current waveform of the 13-kV class SiC JBS diode shows that these diodes have lower reverse recovery losses than a 13-kV SiC PiN diode.

Investigation of Packaged High-Voltage 4H SiC pin Diodes in the 20-700 °C Temperature Range

2006 ◽  
Vol 527-529 ◽  
pp. 1375-1378 ◽  
Author(s):  
Mykola S. Boltovets ◽  
Volodymyr V. Basanets ◽  
Nicolas Camara ◽  
Valentyn A. Krivutsa ◽  
Konstantinos Zekentes
Keyword(s):  
Reverse Current ◽  
Pin Diode ◽  
Reverse Voltage ◽  
Pin Diodes ◽  
Effective Lifetime ◽  
Voltage Range ◽  
Temperature Range ◽  
Forward Current ◽  
Blocking Voltage ◽  
Region Length

The packaged microwave 4H SiC pin diode chips (with i-region length of 6 μm, mesa diameter of 80 μm and blocking voltage of 1000 V) were investigated. We studied the parameters of diode I−V curve (in particular, the diode resistance RS at forward current) and the processes of diode switching from forward current of 50 mA to reverse voltage of 15 V, as well as C−V curves, in the 20−700 °C temperature range. At a voltage of 300 V, the diode reverse current was 10 (180) μA when temperature was 600 (700) °C. At a forward current of 40 mA, the diode resistance first decreases smoothly as temperature is increased from 20 up to 300 °C, and then grows up. As temperature is increased from 20 up to 700 °C, the effective lifetime τeff grows from 7 up to 50 ns, while the diode capacitance (in the 0−40 V reverse voltage range) grows smoothly as temperature is increased from 20 up to 400 °C.

Progress on the Development of 10 kV 4H-SiC Pin Diodes for High Current/High Voltage Power Handling Applications

2007 ◽  
Vol 556-557 ◽  
pp. 895-900 ◽  
Author(s):  
Brett A. Hull ◽  
Joseph J. Sumakeris ◽  
Mrinal K. Das ◽  
Jim Richmond ◽  
John W. Palmour
Keyword(s):  
High Voltage ◽  
Pin Diode ◽  
High Current ◽  
Pin Diodes ◽  
Voltage Inverter ◽  
Power Handling

The development of 4H-SiC PiN diodes capable of blocking to greater than 10 kV while having current ratings of 20 A at 100 A/cm2 is continuing in earnest. VF instability of these diodes continues to be a roadblock, but progress is being made, and a 20 A/10 kV 4H-SiC PiN diode wafer with an overall device yield of 40% has been fabricated. The latest device characteristics are discussed, along with details of approaches in improving the reverse recovery characteristics of these diodes to satisfy the requirements needed for implementation into high voltage inverter modules capable of switching at up to 20 kHz.

Improving Switching Characteristics of 4H-SiC Junction Rectifiers Using Epitaxial and Implanted Anodes with Epitaxial Refill

2006 ◽  
Vol 527-529 ◽  
pp. 1363-1366
Author(s):  
Peter A. Losee ◽  
Can Hua Li ◽  
R.J. Kumar ◽  
T. Paul Chow ◽  
I. Bhat ◽  
...  
Keyword(s):  
Voltage Drop ◽  
Experimental Characterization ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Switching Performance ◽  
Forward Current ◽  
Forward Voltage Drop ◽  
Current Densities ◽  
Switching Characteristics ◽  
Junction Rectifiers

The on-state and switching performance of high voltage 4H-SiC junction rectifiers are compared using numerical simulations and experimental characterization. Epitaxial and implanted anode PiN diodes as well as novel, advanced rectifiers have been fabricated in 4H-SiC using 110μm thick drift layers. The relatively low forward voltage drop of these epi-anode diodes (4.2V @ 100A/cm2) indicates moderate conductivity modulation, while the superior switching performance of the “MPS-like” rectifiers is demonstrated with reverse recovery characteristics at various temperatures and forward current densities.

Component Technologies for Ultra-High-Voltage 4H-SiC pin Diode

2011 ◽  
Vol 679-680 ◽  
pp. 535-538 ◽  
Author(s):  
Koji Nakayama ◽  
Ryosuke Ishii ◽  
Katsunori Asano ◽  
Tetsuya Miyazawa ◽  
Masahiko Ito ◽  
...  
Keyword(s):  
High Voltage ◽  
Epitaxial Layers ◽  
Pin Diode ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Voltage Drops ◽  
Drift Layer ◽  
Ultra High Voltage

Forward voltage drops of carbon implanted and thermal oxidized pin diode with thick drift layer are investigated to evaluate the effect on the lifetime. The forward voltage drops of the carbon implanted and thermal oxidized pin diodes with drift layer of 120 μm thick were around 4.0 V. Furthermore, blocking characteristics of 4H-SiC pin diodes with mesa-JTE, which were fabricated on C-face and Si-face substrates, are also investigated. The breakdown voltages of pin diodes with 250 μm and 100 μm epitaxial layers are 17.1 kV and 10.9 kV, respectively.

Development of Large Area (up to 1.5 cm2) 4H-SiC 10 kV Junction Barrier Schottky Rectifiers

2008 ◽  
Vol 600-603 ◽  
pp. 931-934 ◽  
Author(s):  
Brett A. Hull ◽  
Joseph J. Sumakeris ◽  
Michael J. O'Loughlin ◽  
Q. Jon Zhang ◽  
Jim Richmond ◽  
...  
Keyword(s):  
Pin Diode ◽  
Large Area ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Substrate Quality ◽  
Schottky Rectifiers ◽  
Dc Characteristics ◽  
Recovery Performance ◽  
Made In ◽  
Performance Comparisons

DC characteristics and reverse recovery performance of 4H-SiC Junction Barrier Schottky (JBS) diodes capable of blocking in excess of 10 kV with forward conduction of 20 A at a forward voltage of less than 4 V are described. Performance comparisons are made to a similarly rated 10 kV 4H-SiC PiN diode. The JBS diodes show a significant improvement in reverse recovery stored charge as compared to PiN diodes, showing half of the stored charge at 25°C and a quarter of the stored charge at 125°C when switched to 3 kV blocking. These large area JBS diodes were also employed to demonstrate the tremendous advances that have recently been made in 4H-SiC substrate quality.

Evolution of Drift-Free, High Power 4H-SiC PiN Diodes

2006 ◽  
Vol 527-529 ◽  
pp. 1329-1334 ◽  
Author(s):  
Mrinal K. Das ◽  
Joseph J. Sumakeris ◽  
Brett A. Hull ◽  
Jim Richmond
Keyword(s):  
High Power ◽  
Voltage Stability ◽  
Fundamental Problem ◽  
Minority Carrier Lifetime ◽  
Device Fabrication ◽  
Pin Diode ◽  
Dramatic Improvement ◽  
Forward Voltage ◽  
Pin Diodes ◽  
Fault Growth

The PiN diode is an attractive device to exploit the high power material advantages of 4H-SiC. The combination of high critical field and adequate minority carrier lifetime has enabled devices that block up to 20 kV and carry 25 A. Furthermore, these devices exhibit fast switching with less reverse recovery charge than commercially available Si PiN diodes. The path to commercialization of the 4H-SiC PiN diode technology, however, has been hampered by a fundamental problem with the forward voltage stability resulting from stacking fault growth emanating from basal plane screw dislocations (BPD). In this contribution, we highlight the progress toward producing stable high power devices with sufficient yield to promote commercial interest. Two independent processes, LBPD1 and LBPD2, have been shown to be effective in reducing the BPD density and enhancing the forward voltage stability while being compatible with conventional power device fabrication. Applying the LBPD1 and LBPD2 processes to 10 kV (20 A and 50 A) 4H-SiC PiN diode technology has resulted in a dramatic improvement in the total device yield (forward, reverse, and forward drift yields) from 0% to >20%. The LBPD1 process appears to be more robust in terms of long term forward voltage stability.

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