scholarly journals UJI UV-VIS LAPISAN TiO2/N2 UNTUK MENENTUKAN BAND GAP ENERGY

2018 ◽  
Vol 3 (2) ◽  
pp. 6-10
Author(s):  
Devi Indriani ◽  
Helga Dwi Fahyuan ◽  
Ngatijo Ngatijo
Keyword(s):  
Band Gap ◽  
Wavelength Range ◽  
Energy Band ◽  
Nitrogen Doping ◽  
Band Gap Energy ◽  
Tio2 Layer ◽  
Energy Band Gap ◽  
Gap Energy ◽  
Transmittance Band

[Title: TEST UV-VIS LAYER TiO2/N2 FOR DETERMINING BAND GAP ENERGY] The effect of nitrogen doping variation on energy band gap in TiO2 layer grown by doctor blade technique. The TiO2/N2 layer was prepared with concentrations of 0%, 15%, 25% and 25% calcined at 500°C for 3 hours. Characterization of band gap energy by using the UV-Vis spectrometer at a wavelength range of 200 nm-700 nm. The band gap energy is obtained by using the Swanepoel equation and Touch Plot method. The results showed that doping of nitrogen can decrease the band gap energy of 3.9250 eV, 3.8750 eV, 3.8375 eV and 3.9125 eV, respectively. The smallest energy band gap is obtained at 25% concentration that is 3.8375eV. Keywords: Coating TiO2/N2, transmittance, Band gap energy

Synthesis and characterization of a mixture of CoFe2O4 and MgFe2O4 from layered double hydroxides: Band gap energy and magnetic responses

2014 ◽  
Vol 369 ◽  
pp. 249-259 ◽  
Author(s):  
Ulises A. Agú ◽  
Marcos I. Oliva ◽  
Sergio G. Marchetti ◽  
Angélica C. Heredia ◽  
Sandra G. Casuscelli ◽  
...  
Keyword(s):  
Band Gap ◽  
Layered Double Hydroxides ◽  
Band Gap Energy ◽  
Synthesis And Characterization ◽  
Gap Energy ◽  
Double Hydroxides

Effects of Nitrogen Doping on Optical Properties of Tungsten Oxide Thin Films

2012 ◽  
Vol 616-618 ◽  
pp. 1773-1777
Author(s):  
Xi Lian Sun ◽  
Hong Tao Cao
Keyword(s):  
Thin Films ◽  
Refractive Index ◽  
Optical Properties ◽  
Band Gap ◽  
Tungsten Oxide ◽  
Nitrogen Doping ◽  
Optical Band Gap ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Tungsten Oxide Thin Films

In depositing nitrogen doped tungsten oxide thin films by using reactive dc pulsed magnetron sputtering process, nitrous oxide gas (N2O) was employed instead of nitrogen (N2) as the nitrogen dopant source. The nitrogen doping effect on the structural and optical properties of WO3 thin films was investigated by X-ray diffraction, transmission electron microscopy and UV-Vis spectroscopy. The thickness, refractive index and optical band gap energy of these films have been determined by analyzing the SE spectra using parameterized dispersion model. Morphological images reveal that the films are characterized by a hybrid structure comprising nanoparticles embeded in amorphous matrix and open channels between the agglomerated nanoparticles. Increasing nitrogen doping concentration is found to decrease the optical band gap energy and the refractive index. The reduced band gaps are associated with the N 2p orbital in the N-doped tungsten oxide films.

Spectroscopic Ellipsometry Analysis of InGaN/GaN and AlGaN/GaN Heterostructures Using a Parametric Dielectric Function Model

1999 ◽  
Vol 595 ◽  
Author(s):  
J. Wagner ◽  
A. Ramakrishnan ◽  
H. Obloh ◽  
M. Kunzer ◽  
K. Köhler ◽  
...  
Keyword(s):  
Band Gap ◽  
Dielectric Function ◽  
Spectroscopic Ellipsometry ◽  
Composition Dependence ◽  
Band Gap Energy ◽  
Function Model ◽  
Gap Energy ◽  
The Individual ◽  
Gap Data

AbstractSpectroscopic ellipsometry (SE) has been used for the characterization of AlGaN/GaN and InGaN/GaN heterostructures. The resulting pseudodielectric function spectra were analyzed using a multilayer approach, describing the dielectric functions of the individual layers by a parametric oscillator model. From this analysis, the dielectric function spectra of GaN, AlxGa1−xN (x≤0.16), and In0.13Ga0.87N were deduced. Further, the dependence of the AlxGa1−xN band gap energy on the Al mole fraction was derived and compared with photoluminescence data recorded on the same material. The SE band gap data are compatible with a bowing parameter close to 1 eV for the composition dependence of the AlxGa1−xN gap energy. Finally, the parametric dielectric functions have been used to model the pseudodielectric function spectrum of a complete GaN/AlGaN/InGaN LED structure.

Growth and characterization of ZnMgSrO thin films lattice-matched to ZnO and with deep-UV energy band gap

2011 ◽  
Vol 519 (19) ◽  
pp. 6579-6582
Author(s):  
Il-Soo Kim ◽  
Jang-Ho Park ◽  
Byung-Teak Lee
Keyword(s):  
Thin Films ◽  
Band Gap ◽  
Energy Band ◽  
Energy Band Gap ◽  
Deep Uv ◽  
Lattice Matched

Characterization of Tb-doped hydroxyapatite for biomedical applications: optical properties and energy band gap determination

2017 ◽  
Vol 52 (17) ◽  
pp. 9990-10000 ◽  
Author(s):  
Y. Jiménez-Flores ◽  
M. Suárez-Quezada ◽  
J. B. Rojas-Trigos ◽  
L. Lartundo-Rojas ◽  
V. Suárez ◽  
...  
Keyword(s):  
Optical Properties ◽  
Band Gap ◽  
Energy Band ◽  
Biomedical Applications ◽  
Energy Band Gap

scholarly journals The Effect of Niobium and Rubidium Doping on the Energy Band Gap of a Lithium Tantalate (LiTaO3) Thin Film

2021 ◽  
Vol 32 (2) ◽  
pp. 1-5
Author(s):  
Agus Ismangil ◽  
Fatimah Arofiati Noor ◽  
Toto Winata
Keyword(s):  
Band Gap ◽  
Valence Band ◽  
Conduction Band ◽  
Chemical Solution Deposition ◽  
Band Gap Energy ◽  
Chemical Solution ◽  
Energy Band Gap ◽  
Solution Deposition ◽  
Gap Energy ◽  
Niobium Doped

Chemical solution deposition (CSD) is a technique for making a film by keeping synthetic arrangements on the outer layer of the substrate. The outcomes show that the band gap energy of the LiTaO3 film is 1 eV. Electrons are more effectively invigorated to the valence band than to the conduction band on the grounds that the energy required is not excessively huge. Niobium-doped LiTaO3 film has a band gap energy of 1.15 eV. A large amount of energy is needed for electrons to be energized from the valence band to the conduction band. The rubidium-doped LiTaO3 film has a band gap energy of 1.30 eV.

Effect of nitrogen-doping and post annealing on wettability and band gap energy of TiO2 thin film

2020 ◽  
Vol 500 ◽  
pp. 144048 ◽  
Author(s):  
Zhilei Sun ◽  
V.F. Pichugin ◽  
K.E. Evdokimov ◽  
M.E. Konishchev ◽  
M.S. Syrtanov ◽  
...  
Keyword(s):  
Thin Film ◽  
Band Gap ◽  
Nitrogen Doping ◽  
Tio2 Thin Film ◽  
Band Gap Energy ◽  
Gap Energy ◽  
Post Annealing

scholarly journals Optical Characterization of Zinc Modified Bismuth Silicate Glasses

2015 ◽  
Vol 2015 ◽  
pp. 1-9 ◽  
Author(s):  
Rajesh Parmar ◽  
J. Hooda ◽  
R. S. Kundu ◽  
R. Punia ◽  
N. Kishore
Keyword(s):  
Band Gap ◽  
Optical Characterization ◽  
Dielectric Materials ◽  
Band Gap Energy ◽  
Glass System ◽  
Energy Band Gap ◽  
Classical Electron ◽  
Increase With Increase ◽  
Good Agreement

The optical characterization of glass samples in the system 40SiO2·xZnO · (60-x)Bi2O3withx=0, 5, 10, 15, 20, 25, 30, 35, and 40 prepared by conventional melt-quench technique has been carried out in the light of Hydrogenic Excitonic Model (HEM). The absorption coefficient spectra show good agreement with theoretical HEM for the present glass system and the values of different parameters likeEg,R,Γ1,Γc, andCohave been estimated from fitting of this model. The values of energy band gap estimated from fitting of HEM with experimental data are in good agreement with those obtained from Tauc’s plot for direct transitions. The band gap energy is found to increase with increase of ZnO content. The decrease in values of Urbach energy with increase in ZnO content indicates a decrease in defect concentration in the glass matrix on addition of ZnO content. Optical constantsnandkobeyk-kconsistency and the dielectric response of the studied glass system is similar to that obtained for Classical Electron Theory of Dielectric Materials. The calculated values of the metallization criterion (M) show that the synthesized glasses may be good candidates for new nonlinear optical materials.

scholarly journals Structural, Optical, and Magnetic Characterization of Spinel Zinc Chromite Nanocrystallines Synthesised by Thermal Treatment Method

2014 ◽  
Vol 2014 ◽  
pp. 1-7 ◽  
Author(s):  
Salahudeen A. Gene ◽  
Elias Saion ◽  
Abdul H. Shaari ◽  
Mazliana A. Kamarudin ◽  
Naif M. Al-Hada ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Band Gap ◽  
Treatment Method ◽  
Band Gap Energy ◽  
Resonance Spectroscopy ◽  
Magnetic Characterization ◽  
X Ray ◽  
Gap Energy ◽  
Zinc Chromite

The present study reports the structural and magnetic characterization of spinel zinc chromite (ZnCr2O4) nanocrystallines synthesized by thermal treatment method. The samples were calcined at different temperatures in the range of 773 to 973 K. Polyvinylpyrrolidone was used to control the agglomeration of the nanoparticles. The average particle size of the synthesized nanocrystals was determined by powder X-ray diffraction which shows that the crystallite size increases from 19 nm at 773 K to 24 nm at 973 K and the result was in good agreement with the transmission electron microscopy images. The elemental composition of the samples was determined by energy dispersed X-ray spectroscopy which confirmed the presence of Zn, Cr, and O in the final products. Fourier transform infrared spectroscopy also confirmed the presence of metal oxide bands for all the samples calcined at different temperature. The band gap energy was calculated from UV-vis reflectance spectra using the Kubelka-Munk function and the band gap energy of the samples was found to decrease from 4.03 eV at 773 K to 3.89 eV at 973 K. The magnetic properties were also demonstrated by electron spin resonance spectroscopy, the presence of unpaired electrons was confirmed, and the resonant magnetic field and theg-factorof the calcined samples were also studied.

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