Плазменное отражение в мультизеренном слое узкозонных полупроводников

Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15–25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ∼7 μm) is characterized by an absorption band at 2.1–2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50–70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.

Electronic Structure and Optical Properties of N/Si-Codoped Anatase TiO2Evaluated Using First Principles Calculations

First principles calculations were used to evaluate the electronic structure and optical properties of N/Si-monodoped and N/Si-codoped TiO2to further understand their photocatalytic mechanisms. In accordance with the atomic distance between N and Si dopants, this study considered three N/Si codoping configurations, in which the N dopant had a tendency to bond with the Si dopant. The calculations showed that the bandgaps of the N/Si codoping models were narrow, in the range 3.01–3.05 eV, redshifting the intrinsic absorption edge. The Si 3porbital of N/Si-codoped TiO2plays a key role in widening the valence band (VB), thereby increasing carrier mobility. In addition, the N-induced impurity energy level in the forbidden band appears in all three N/Si codoping models, strengthening absorption in the visible region. The bandgap narrowing, VB widening, and impurity energy levels in the forbidden band are beneficial for improving the photocatalytic activity of N/Si-codoped TiO2.