High-operating temperature MWIR nBn HgCdTe detector grown by MOCVD

2013 ◽  
Vol 21 (4) ◽  
Author(s):  
M. Kopytko ◽  
A. Kębłowski ◽  
W. Gawron ◽  
P. Madejczyk ◽  
A. Kowalewski ◽  
...  
Keyword(s):  
Operating Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Wide Range ◽  
Donor Acceptor ◽  
Metal Organic ◽  
Barrier Detectors ◽  
Barrier Device ◽  
Organic Chemical Vapor Deposition ◽  
Iodine Diffusion

AbstractThe paper reports on the first experimental results of the mid-wave infrared (MWIR) HgCdTe barrier detectors operated at near-room temperatures and fabricated using metal organic chemical vapor deposition (MOCVD). SIMS profiles let to compare projected and obtained structures and reveals interdiffusion processes between the layers. Undesirable iodine diffusion from cap to the barrier increase the valance band offset and is the key item in limiting the performance of HgCdTe nBn detector. However, MOCVD technology with a wide range of composition and donor/acceptor doping and without post grown annealing might be successfully adopted for barrier device architectures.

High-operating-temperature MWIR photodetector based on a InAs/GaSb superlattice grown by MOCVD

2022 ◽  
Vol 43 (1) ◽  
pp. 012303
Author(s):  
Xiujun Hao ◽  
Yan Teng ◽  
He Zhu ◽  
Jiafeng Liu ◽  
Hong Zhu ◽  
...  
Keyword(s):  
Lattice Mismatch ◽  
Operating Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Cutoff Wavelength ◽  
X Ray Diffraction ◽  
High Crystalline Quality ◽  
High Operating Temperature ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Abstract We demonstrate a high-operating-temperature (HOT) mid-wavelength InAs/GaSb superlattice heterojunction infrared photodetector grown by metal–organic chemical vapor deposition. High crystalline quality and the near-zero lattice mismatch of a InAs/GaSb superlattice on an InAs substrate were evidenced by high-resolution X-ray diffraction. At a bias voltage of –0.1 V and an operating temperature of 200 K, the device exhibited a 50% cutoff wavelength of ~ 4.9 μm, a dark current density of 0.012 A/cm2, and a peak specific detectivity of 2.3 × 109 cm·Hz1/2 /W.

Single molecular precursor metal-organic chemical vapor deposition of MgAl2O4 thin films

1994 ◽  
Vol 9 (6) ◽  
pp. 1333-1336 ◽  
Author(s):  
Jiming Zhang ◽  
Gregory T. Stauf ◽  
Robin Gardiner ◽  
Peter Van Buskirk ◽  
John Steinbeck
Keyword(s):  
Thin Films ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Liquid Solution ◽  
Organic Chemical ◽  
Starting Compound ◽  
Wide Range ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

MgAl2O4 films have been grown epitaxially on both Si(100) and MgO(100) by a novel single source metal-organic chemical vapor deposition (MOCVD) process. A single molecular source reagent [magnesium dialuminum isopropoxide, MgAl2(OC3H7)8] having the desired Mg: Al ratio was dissolved in a liquid solution and flash-vaporized into the reactor. Both thermal and plasma-enhanced MOCVD were used to grow epitaxial MgAl2O4 thin films. The Mg: Al ratio in the deposited films was the same as that of the starting compound (Mg: Al = 1:2) over a wide range of deposition conditions. The deposition temperature required for the formation of crystalline spinel was found to be significantly reduced and crystallinity was much improved on Si by using a remote plasma-enhanced MOCVD process. The epitaxial nature of the MgAl2O4 films was established by x-ray pole figure analysis.

Study of the growth of TiO2 on A12O3 by pulsed-laser ablation

1994 ◽  
Vol 52 ◽  
pp. 642-643
Author(s):  
M. W. Bench ◽  
C.B. Carter
Keyword(s):  
Thin Films ◽  
Laser Ablation ◽  
Pulsed Laser ◽  
Chemical Vapor ◽  
Pulsed Laser Ablation ◽  
Organic Chemical ◽  
Wide Range ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition ◽  
Deposition Techniques

There has been an increasing interest in recent years in the growth of epitactic oxide thin films for use in a variety of technological applications, including optical and electronic devices. A number of fundamental aspects of the growth of TiO2 films on alumina substrates by metal-organic chemical vapor deposition have been reported by Chang et al. For the case of MgO, Hesse et al. demonstrated the epitactic growth by pulsed-laser deposition of YBa2Cu3O7-x on (001) MgO passivated by a layer of the inverse spinel Mg2TiO4. The Mg2TiO4 layer was formed directly by a vapor-phase solid-state reaction during the deposition by e-beam evaporation of TiO2 onto heated MgO substrates. In other studies, TiO2 thin films have been grown using a variety of deposition techniques. For the growth of oxide materials in general, pulsed-laser ablation is a viable means of growing films, and allows materials with a wide range of stoichiometrics to be produced.

scholarly journals High Operating Temperature InAs/GaSb Superlattice Based Mid Wavelength Infrared Photodetectors Grown by MOCVD

Photonics ◽  
2021 ◽  
Vol 8 (12) ◽  
pp. 564
Author(s):  
He Zhu ◽  
Jiafeng Liu ◽  
Hong Zhu ◽  
Yunlong Huai ◽  
Meng Li ◽  
...  
Keyword(s):  
Operating Temperature ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Infrared Photodetectors ◽  
Cutoff Wavelength ◽  
Fully Depleted ◽  
High Operating Temperature ◽  
Diffusion Limited ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

High operating temperature mid-wavelength InAs/GaSb superlattice infrared photodetectors with a single heterojunction structure grown by metal–organic chemical vapor deposition are reported. By inserting a fully-depleted wider-gap barrier layer between the absorber and the p-contact, “diffusion-limited” behavior has been achieved for the heterojunction “PNn” device, in contrast to the conventional pin homojunction device. The PNn device with a 50% cutoff wavelength of 4.5 μm exhibited a dark current of 2.05 × 10−4 A/cm2 and a peak specific detectivity of 1.28 × 1011 cm·Hz·W−1 at 150 K and a reverse bias of −0.1 V.

Structural and electronic properties of defects in semiconductors

1995 ◽  
Vol 53 ◽  
pp. 4-5
Author(s):  
J.L. Batstone
Keyword(s):  
Semiconductor Device ◽  
Chemical Vapor ◽  
Misfit Strain ◽  
Organic Chemical ◽  
Extended Defects ◽  
Transmission Electron ◽  
Semiconductor Thin Films ◽  
Wide Range ◽  
Metal Organic ◽  
Film Substrate

The development of growth techniques such as metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy during the last fifteen years has resulted in the growth of high quality epitaxial semiconductor thin films for the semiconductor device industry. The III-V and II-VI semiconductors exhibit a wide range of fundamental band gap energies, enabling the fabrication of sophisticated optoelectronic devices such as lasers and electroluminescent displays. However, the radiative efficiency of such devices is strongly affected by the presence of optically and electrically active defects within the epitaxial layer; thus an understanding of factors influencing the defect densities is required.Extended defects such as dislocations, twins, stacking faults and grain boundaries can occur during epitaxial growth to relieve the misfit strain that builds up. Such defects can nucleate either at surfaces or thin film/substrate interfaces and the growth and nucleation events can be determined by in situ transmission electron microscopy (TEM).

scholarly journals Laser‐Assisted Metal–Organic Chemical Vapor Deposition of Gallium Nitride

2021 ◽  
Vol 15 (6) ◽  
pp. 2170024
Author(s):  
Yuxuan Zhang ◽  
Zhaoying Chen ◽  
Kaitian Zhang ◽  
Zixuan Feng ◽  
Hongping Zhao
Keyword(s):  
Gallium Nitride ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

scholarly journals Growth-Etch Metal–Organic Chemical Vapor Deposition Approach of WS2 Atomic Layers

ACS Nano ◽  
2020 ◽  
Author(s):  
Assael Cohen ◽  
Avinash Patsha ◽  
Pranab K. Mohapatra ◽  
Miri Kazes ◽  
Kamalakannan Ranganathan ◽  
...  
Keyword(s):  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Organic Chemical ◽  
Metal Organic ◽  
Organic Chemical Vapor Deposition

Electron Irradiation Induced Trap In N-Type Gan

1997 ◽  
Vol 482 ◽  
Author(s):  
Z-Q. Fang ◽  
J. W. Hemsky ◽  
D. C. Look ◽  
M. P. Mack ◽  
R. J. Molnar ◽  
...  
Keyword(s):  
Electron Irradiation ◽  
Deep Level Transient Spectroscopy ◽  
Deep Level ◽  
Chemical Vapor ◽  
Hydride Vapor Phase Epitaxy ◽  
Organic Chemical ◽  
Electric Field Effects ◽  
Metal Organic ◽  
Transient Spectroscopy ◽  
Organic Chemical Vapor Deposition

AbstractA 1-MeV-electron-irradiation (EI) induced trap at Ec-0.18 eV is found in n-type GaN by deep level transient spectroscopy (DLTS) measurements on Schottky barrier diodes, fabricated on both metal-organic-chemical-vapor-deposition and hydride-vapor-phase-epitaxy material grown on sapphire. The 300-K carrier concentrations of the two materials are 2.3 × 1016 cm−3 and 1.3 × 1017 cm−3, respectively. Up to an irradiation dose of 1 × 1015 cm−2, the electron concentrations and pre-existing traps in the GaN layers are not significantly affected, while the EI-induced trap is produced at a rate of at least 0.2 cm−1. The DLTS peaks in the two materials are shifted slightly, possibly due to electric-field effects. Comparison with theory suggests that the defect is most likely associated with the N vacancy or Ga interstitial.

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