Enhancement of the thermoelectric properties in bilayer graphene structures induced by Fano resonances

Fano resonances of bilayer graphene could be attractive for thermoelectric devices. The special profile presented by such resonances could significantly enhance the thermoelectric properties. In this work, we study the thermoelectric properties of bilayer graphene single and double barrier structures. The barrier structures are typically supported by a substrate and encapsulated by protecting layers, reducing considerably the phonon thermal transport. So, we will focus on the electronic contribution to the thermal transport. The charge carriers are described as massive chiral particles through an effective Dirac-like Hamiltonian. The Hybrid matrix method and the Landauer–Büttiker formalism are implemented to obtain the transmission, transport and thermoelectric properties. The temperature dependence of the Seebeck coefficient, the power factor, the figure of merit and the efficiency is analyzed for gapless single and double barriers. We find that the charge neutrality point and the system resonances shape the thermoelectric response. In the case of single barriers, the low-temperature thermoelectric response is dominated by the charge neutrality point, while the high-temperature response is determined by the Fano resonances. In the case of double barriers, Breit–Wigner resonances dominate the thermoelectric properties at low temperatures, while Fano and hybrid resonances become preponderant as the temperature rises. The values for the figure of merit are close to two for single barriers and above three for double barriers. The system resonances also allows us to optimize the output power and the efficiency at low and high temperatures. By computing the density of states, we also corroborate that the improvement of the thermoelectric properties is related to the accumulation of electron states. Our findings indicate that bilayer graphene barrier structures can be used to improve the response of thermoelectric devices.

Electrostatic patterning on graphene with dipolar self-assembly

The presence of a self-assembly dipole shifts the neutrality point and introduces electrostatic patterns on graphene.

Model for 1/f Noise in Graphene and in More Common Semiconductors

Measurements performed on several graphene samples have shown the presence of a minimum of the flicker noise power spectral density near the charge neutrality point. This behavior is anomalous with respect to what is observed in more usual semiconductors. Here, we report our explanation for this difference. We simulate the 1/f noise behavior of devices made of graphene and of more common semiconductors, through a model based on the validity of the mass-action law and on the conservation of the charge neutrality. We conclude that the minimum of the flicker noise at the charge neutrality point can be observed only in very clean samples of materials with similar mobilities for electrons and holes.

Theoretical Comparison between the Flicker Noise Behavior of Graphene and of Ordinary Semiconductors

Graphene is a material of particular interest for the implementation of sensors, and the ultimate performance of devices based on such a material is often determined by its flicker noise properties. Indeed, graphene exhibits, with respect to the vast majority of ordinary semiconductors, a peculiar behavior of the flicker noise power spectral density as a function of the charge carrier density. While in most materials flicker noise obeys the empirical Hooge law, with a power spectral density inversely proportional to the number of free charge carriers, in bilayer, and sometimes monolayer, graphene a counterintuitive behavior, with a minimum of flicker noise at the charge neutrality point, has been observed. We present an explanation for this stark difference, exploiting a model in which we enforce both the mass action law and the neutrality condition on the charge fluctuations deriving from trapping/detrapping phenomena. Here, in particular, we focus on the comparison between graphene and other semiconducting materials, concluding that a minimum of flicker noise at the charge neutrality point can appear only in the presence of a symmetric electron-hole behavior, a condition characteristic of graphene, but which is not found in the other commonly used semiconductors.