Depth Profiling of Heat-Treated Mo Films on SiO2/Si Substrates

1984 ◽  
pp. 323-325
Author(s):  
K. Fujinaga ◽  
I. Kawashima
Keyword(s):  
Depth Profiling ◽  
Si Substrates ◽  
Heat Treated

Characteristics of oxide thin films from carboxylate precursors

1991 ◽  
Vol 6 (8) ◽  
pp. 1736-1743 ◽  
Author(s):  
Peir-Yung Chu ◽  
Relva C. Buchanan
Keyword(s):  
Thin Films ◽  
Solvent System ◽  
Buffer Layers ◽  
Oxide Thin Films ◽  
Fine Grained ◽  
Si Substrates ◽  
Thermal Pyrolysis ◽  
Metal Nitrates ◽  
Phase Development ◽  
Heat Treated

Oxide thin films on Si substrates were prepared from carboxylate precursors by the reaction of the metal nitrates and ammonium trimethylacetate. Precursor salts were characterized with respect to purity, structure, thermal pyrolysis, and phase development during calcination. A solvent system, based on carboxylic acid/amine mixture, was developed to dissolve the synthesized precursors, resulting in increased solubility, viscosity, and stability. Smooth, fine-grained ZrO2, Y2O3, and YSZ films were obtained on Si wafers by spin-coating and subsequent heat treatment above 500 °C. Films heat treated below 700 °C were generally adherent, amorphous, or microcrystalline, while YSZ and ZrO2 showed (111) preferred orientation above 700 °C. These oxide films show promise as protective or buffer layers on Si wafers.

Depth profiling and morphological characterization of AlN thin films deposited on Si substrates using a reactive sputter magnetron

2014 ◽  
Vol 67 (2) ◽  
pp. 21301 ◽  
Author(s):  
Carlos Macchi ◽  
Juan Bürgi ◽  
Javier García Molleja ◽  
Sebastiano Mariazzi ◽  
Mattia Piccoli ◽  
...  
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Morphological Characterization ◽  
Si Substrates

Sb Implantation in Si1–xGex/Si(100) Structures

1991 ◽  
Vol 235 ◽  
Author(s):  
Z. Atzmon ◽  
M. Eizenberg ◽  
P. Revesz ◽  
J. W. Mayer ◽  
F. Schäffler
Keyword(s):  
Short Distance ◽  
Room Temperature ◽  
Solid Phase ◽  
Amorphous Layer ◽  
Strained Si ◽  
Si Substrates ◽  
Epitaxial Regrowth ◽  
Heat Treated ◽  
Significant Difference ◽  
Initial Process

ABSTRACTSolid phase epitaxial regrowth of Sb implanted strained Si1−x Gex alloy layers is reported. Two sets of Si1–xGex alloys with compositions of x=0.08 and x=0.18, MBE grown on (100)Si substrates, were implanted at room temperature with Sb− ions at energies of 200 and 100 keV, respectively, and a dose of 1015cm−2. These alloys were heat-treated in a rapid thermal annealing system at temperatures of 525, 550 and 575°C for durations between 5 and 600 sec. The study of the solid phase epitaxial regrowth was performed by Rutherford backscattering in the channeling mode. The measurements show a significant difference in the regrowth mechanism between the two alloys. For the Si0.92Ge0.00 alloy a fast regrowth process (faster than for Sb implanted Si or Si implanted SiGe layers) occured with an activation energy of 2.92±0.2eV. For the Si0.02Ge0.10 alloy the regrowth took place in two steps: a) a very fast initial process over a short distance, b) a regrowth process of the majority of the amorphous layer.

The Diffusion and Interfacial Reaction of Cu/Si(100) Systems

2011 ◽  
Vol 287-290 ◽  
pp. 2302-2307
Author(s):  
Xing Xin Gao ◽  
Yan Hui Jia ◽  
Gong Ping Li ◽  
Jun Ping Ma ◽  
Yun Bo Wang
Keyword(s):  
Rutherford Backscattering Spectrometry ◽  
Interface Reaction ◽  
Atomic Diffusion ◽  
Silicide Phase ◽  
Copper Silicide ◽  
Cu Films ◽  
Si Substrates ◽  
Heat Treated ◽  
Wide Range ◽  
Different Temperatures

The Cu thin films have been deposited on Si(100) substrates by magnetron sputtering at room temperature. The samples were heat treated by conventional thermal annealing in different temperatures: 230°C, 350°C, 450°C and 500°C. The interface reaction and atomic diffusion of the Cu films and Si substrates between as-deposited and as-annealed at different temperatures are investigated by means of Rutherford backscattering spectrometry(RBS) and X-ray diffraction(XRD). Some significant results are obtained on the following aspects: (1) According to RBS, as-deposited Cu/Si(100) samples are not found interdiffusion, and the onset temperature of interdiffusion is 230°C. With the increase of temperature, the interdiffusion becomes more apparent. (2) After annealing at 230°C, the XRD results of the samples showed formation of Cu3Si(300). As the annealing temperature increases, the other copper-silicide phases are formed. The main copper-silicide phase is Cu3Si(300) after annealing at 500°C. It means that Cu3Si is a reliable copper-silicide in a wide range for the Cu/Si(100) interface.

Auger depth profiling of heat-treated Au/Ni thin films

2002 ◽  
Vol 33 (4) ◽  
pp. 306-308 ◽  
Author(s):  
Ahmed M. Abdul-Lettif
Keyword(s):  
Thin Films ◽  
Depth Profiling ◽  
Heat Treated

Study of the Tnfluence of Structural Properties on Si and Be Doping of Heteroepitaxial InAsSb on GaAs-Coated Si Substrates for Infrared Photodiodes

1990 ◽  
Vol 198 ◽  
Author(s):  
J. De Boeck ◽  
W. Dobbelaere ◽  
M. Van Hove ◽  
J. Vanhellemont ◽  
W. De Raedt ◽  
...  
Keyword(s):  
Defect Structure ◽  
Depth Profiling ◽  
Absorption Spectrometry ◽  
Growth Conditions ◽  
Si Substrates ◽  
Dopant Incorporation ◽  
Infrared Photodiodes ◽  
Infrared Absorption Spectrometry ◽  
Heteroepitaxial Layers ◽  
Sims Depth Profiling

ABSTRACTThe behavior of Si and Be impurities in InAsx Sb1−x (0.05<x<0.45) heteroepitaxial layers grown on GaAs-coated Si by MBE is characterised. Siis found to act as an n-type dopant for the growth conditions used. The calibration of the Si n-type doping as a function of the Sisource temperature is obtained by infrared absorption spectrometry, stripping Hall and SIMS depth profiling. At high doping levels the amphoterical characterof the Si impurities becomes evident. SIMS is used to investigate the dopant incorporation and the formation of diode structures. The influence of the mismatched epitaxy on the transport properties is investigated by stripping Hall measurements. In order to establish the correlation between crystalline properties of the epilayers and the ability to fabricate diodes, we compare the defect structure of InAs and In(As)Sb p-'i'-n diodes.

scholarly journals Determination of the compositions of the DIGM zone in nanocrystalline Ag/Au and Ag/Pd thin films by secondary neutral mass spectrometry

2016 ◽  
Vol 7 ◽  
pp. 474-483 ◽  
Author(s):  
Gábor Y Molnár ◽  
Shenouda S Shenouda ◽  
Gábor L Katona ◽  
Gábor A Langer ◽  
Dezső L Beke
Keyword(s):  
Mass Spectrometry ◽  
Grain Boundary ◽  
Diffusion Processes ◽  
Boundary Migration ◽  
Depth Profiling ◽  
Grain Boundary Migration ◽  
Left Behind ◽  
Nanocrystalline Thin Film ◽  
Heat Treated

Alloying by grain boundary diffusion-induced grain boundary migration is investigated by secondary neutral mass spectrometry depth profiling in Ag/Au and Ag/Pd nanocrystalline thin film systems. It is shown that the compositions in zones left behind the moving boundaries can be determined by this technique if the process takes place at low temperatures where solely the grain boundary transport is the contributing mechanism and the gain size is less than the half of the grain boundary migration distance. The results in Ag/Au system are in good accordance with the predictions given by the step mechanism of grain boundary migration, i.e., the saturation compositions are higher in the slower component (i.e., in Au or Pd). It is shown that the homogenization process stops after reaching the saturation values and further intermixing can take place only if fresh samples with initial compositions, according to the saturation values, are produced and heat treated at the same temperature. The reversal of the film sequence resulted in the reversal of the inequality of the compositions in the alloyed zones, which is in contrast to the above theoretical model, and explained by possible effects of the stress gradients developed by the diffusion processes itself.

Improving the analytical performance of pulsed-GD-SFMS for multi-elemental depth profile analysis of heat-treated Zn coatings on extruded aluminium

2019 ◽  
Vol 34 (11) ◽  
pp. 2252-2260 ◽  
Author(s):  
Jorge Pisonero ◽  
Jonatan Fandino ◽  
Jan Halvor Nordlien ◽  
Silke Richter ◽  
Jens Pfeifer ◽  
...  
Keyword(s):  
Mass Spectrometry ◽  
Profile Analysis ◽  
Depth Profiling ◽  
Depth Profile Analysis ◽  
Field Mass ◽  
Pulsed Glow Discharge ◽  
Heat Treated ◽  
Elemental Depth ◽  
Elemental Depth Profile ◽  
Sector Field Mass Spectrometry

An improved analytical method based on pulsed glow discharge sector field mass spectrometry is investigated for fast and sensitive multi-elemental depth profiling of heat-treated Zn coatings on extruded aluminium.

Effects of lanthanum nitrate buffer layer on the orientation and piezoelectric property of Pb(Zr,Ti)O3 thick film

2004 ◽  
Vol 19 (12) ◽  
pp. 3671-3678 ◽  
Author(s):  
Jong-Jin Choi ◽  
Gun-Tae Park ◽  
Chee-Sung Park ◽  
Jae-Wung Lee ◽  
Hyoun-Ee Kim
Keyword(s):  
Piezoelectric Property ◽  
Buffer Layer ◽  
Thick Films ◽  
Sol Gel ◽  
Lanthanum Nitrate ◽  
Si Substrates ◽  
Pzt Film ◽  
Heat Treated ◽  
Coating Method ◽  
Ferroelectric Hysteresis

Highly oriented Pb(Zr,Ti)O3 (PZT) films were deposited on Pt/Ti/SiO2/Si substrates by the sol-gel method using lanthanum nitrate as a buffer layer. When the lanthanum nitrate buffer layer was heat treated at temperatures between 450 and 550 °C, the PZT layer coated onto this buffer layer showed a strong (100) preferred orientation. Regardless of the other deposition conditions, such as the pyrolysis temperature, pyrolysis time, annealing temperature and heating rate, the film deposited on the buffer layer had this orientation. Thick films were also fabricated using the sol-gel multi-coating method, and the (100) texture was found to be maintained up to a thickness of 10 μm. The ferroelectric hysteresis and piezoelectric coefficient (d33) of highly oriented PZT thick films were characterized, and the (100) oriented PZT film showed higher piezoelectric property than the (111) oriented film.

Characterization of Doped Diamondlike Carbon Films and Multilayers

1993 ◽  
Vol 316 ◽  
Author(s):  
H.C. hofsäss ◽  
J. Biegel ◽  
C. Ronning ◽  
R.G. Downing ◽  
G.P. Lamaze
Keyword(s):  
Ion Beam ◽  
Depth Profiling ◽  
Carbon Films ◽  
Localized States ◽  
Neutron Depth Profiling ◽  
Si Substrates ◽  
Current Voltage ◽  
Diamondlike Carbon ◽  
First Results ◽  
Dopant Atoms

ABSTRACTWe have grown doped diamondlike carbon (DLC) thin films on Ni and Si substrates by mass separated low energy ion beam deposition. The current-voltage characteristics of these films and also a P-doped DLC / B-doped DLC diode-like device were measured. Doped DLC films show a higher electrical conductivity, which we interpret by hopping conductivity due to an increased density of localized states rather than a shift of the Fermi level. We also present first results on doping modulated DLC multilayers deposited on Si substrates. The dopant concentration profiles were analyzed by Rutherford Backscattering for63Cu dopant atoms and by neutron depth profiling for a10B doped multilayer.

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