Influence of sub-band gap density of states on the electrical performance of amorphous SiZnSnO thin film transistor

Solution-processed semiconducting single-walled carbon nanotube (s-SWCNT) thin film transistors (TFTs) based on different atomic layer deposited AlZrOx insulators are fabricated and characterized.

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Electrical and Structural Characteristics of Excimer Laser-Crystallized Polycrystalline Si1−xGex Thin-Film Transistors

Materials ◽

10.3390/ma12111739 ◽

2019 ◽

Vol 12 (11) ◽

pp. 1739 ◽

Cited By ~ 2

Author(s):

Kyungsoo Jang ◽

Youngkuk Kim ◽

Joonghyun Park ◽

Junsin Yi

Keyword(s):

Thin Film ◽

Grain Size ◽

Energy Density ◽

Excimer Laser ◽

Density Of States ◽

Silicon Germanium ◽

Structural Characteristics ◽

Thin Film Transistor ◽

Electrical Characteristics ◽

Starting Point

We investigated the characteristics of excimer laser-annealed polycrystalline silicon–germanium (poly-Si1−xGex) thin film and thin-film transistor (TFT). The Ge concentration was increased from 0% to 12.3% using a SiH4 and GeH4 gas mixture, and a Si1−xGex thin film was crystallized using different excimer laser densities. We found that the optimum energy density to obtain maximum grain size depends on the Ge content in the poly-Si1−xGex thin film; we also confirmed that the grain size of the poly-Si1−xGex thin film is more sensitive to energy density than the poly-Si thin film. The maximum grain size of the poly-Si1−xGex film was 387.3 nm for a Ge content of 5.1% at the energy density of 420 mJ/cm2. Poly-Si1−xGex TFT with different Ge concentrations was fabricated, and their structural characteristics were analyzed using Raman spectroscopy and atomic force microscopy. The results showed that, as the Ge concentration increased, the electrical characteristics, such as on current and sub-threshold swing, were deteriorated. The electrical characteristics were simulated by varying the density of states in the poly-Si1−xGex. From this density of states (DOS), the defect state distribution connected with Ge concentration could be identified and used as the basic starting point for further analyses of the poly-Si1−xGex TFTs.

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Effects of high-k gate dielectrics on the electrical performance and reliability of an amorphous indium–tin–zinc–oxide thin film transistor (a-ITZO TFT): an analytical survey

Nanoscale ◽

10.1039/c9nr03395e ◽

2019 ◽

Vol 11 (48) ◽

pp. 23459-23474 ◽

Cited By ~ 3

Author(s):

Taki Eddine Taouririt ◽

Afak Meftah ◽

Nouredine Sengouga ◽

Marwa Adaika ◽

Slimane Chala ◽

...

Keyword(s):

Thin Film ◽

Gate Dielectrics ◽

Thin Film Transistor ◽

Oxide Thin Film ◽

Electrical Performance ◽

Zinc Oxide Thin Film ◽

Dielectric Layers ◽

High K ◽

Different Types ◽

Silvaco Atlas

This study is a numerical simulation obtained by using Silvaco Atlas software to investigate the effect of different types of dielectric layers, inserted between the channel and the gate, on the performance and reliability of an a-ITZO TFT.

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