Effects of uniaxial strain on the gate capacitance of double gate MOSFETs

2008 IEEE International Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2008.4760706 ◽

2008 ◽

Author(s):

Md. Itrat Bin Shams ◽

Md. Kawsar Alam ◽

Quazi D. M. Khosru

Keyword(s):

Uniaxial Strain ◽

Double Gate ◽

Gate Capacitance

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Effects of uniaxial strain on gate capacitance and threshold voltage of double gate junctionless transistor

2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC) ◽

10.1109/nmdc.2018.8605728 ◽

2018 ◽

Author(s):

Md. Mohsinur Rahman Adnan ◽

Quazi D.M. Khosru

Keyword(s):

Threshold Voltage ◽

Uniaxial Strain ◽

Double Gate ◽

Gate Capacitance ◽

Junctionless Transistor

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Effects of wave function penetration on gate capacitance modeling of nanoscale double gate MOSFETs

2007 IEEE Conference on Electron Devices and Solid-State Circuits ◽

10.1109/edssc.2007.4450081 ◽

2007 ◽

Cited By ~ 2

Author(s):

Asif Islam Khan ◽

Md. Khalid Ashraf ◽

Quazi D. M. Khosru

Keyword(s):

Wave Function ◽

Double Gate ◽

Gate Capacitance

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Inversion gate capacitance of undoped single-gate and double-gate field-effect transistor geometries in the extreme quantum limit

Journal of Applied Physics ◽

10.1063/1.4907950 ◽

2015 ◽

Vol 117 (20) ◽

pp. 205704 ◽

Cited By ~ 5

Author(s):

Amlan Majumdar

Keyword(s):

Field Effect ◽

Field Effect Transistor ◽

Quantum Limit ◽

Double Gate ◽

Gate Capacitance ◽

Effect Transistor

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A Model of the Gate Capacitance of Surrounding Gate Transistors: Comparison With Double-Gate MOSFETs

IEEE Transactions on Electron Devices ◽

10.1109/ted.2010.2058630 ◽

2010 ◽

Vol 57 (10) ◽

pp. 2477-2483 ◽

Cited By ~ 10

Author(s):

Francisco J García Ruiz ◽

Isabel María Tienda-Luna ◽

Andrés Godoy ◽

Luca Donetti ◽

Francisco Gamiz

Keyword(s):

Double Gate ◽

Gate Capacitance ◽

Surrounding Gate

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Impact of Wave Function Penetration into Gate Oxide on Gate Capacitance and Threshold Voltage of n-Channel Double Gate Junction Less Transistor

2018 International Conference on Advancement in Electrical and Electronic Engineering (ICAEEE) ◽

10.1109/icaeee.2018.8642974 ◽

2018 ◽

Author(s):

Md. Mohsinur Rahman Adnan ◽

Mohammad Shahidur Rahman

Keyword(s):

Wave Function ◽

Threshold Voltage ◽

Gate Oxide ◽

Double Gate ◽

Gate Capacitance

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Effects of Wave Function Penetration on Gate Capacitance and Threshold Voltage of p-Channel Double Gate Junction Less Field Effect Transistor

2019 1st International Conference on Advances in Science, Engineering and Robotics Technology (ICASERT) ◽

10.1109/icasert.2019.8934456 ◽

2019 ◽

Author(s):

Md. Mohsinur Rahman Adnan ◽

Mohammad Shahidur Rahman

Keyword(s):

Wave Function ◽

Threshold Voltage ◽

Field Effect ◽

Field Effect Transistor ◽

Double Gate ◽

Gate Capacitance ◽

Effect Transistor

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Analytical modeling of uniaxial strain effects on the performance of double-gate graphene nanoribbon field-effect transistors

Nanoscale Research Letters ◽

10.1186/1556-276x-9-65 ◽

2014 ◽

Vol 9 (1) ◽

Cited By ~ 15

Author(s):

George S Kliros

Keyword(s):

Field Effect ◽

Analytical Modeling ◽

Field Effect Transistors ◽

Graphene Nanoribbon ◽

Uniaxial Strain ◽

Double Gate ◽

Strain Effects

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Reduced Gate Capacitance of Dual Metal Double Gate over Single Metal Double Gate Tunnel FET: A Comparative Study

2018 Conference on Emerging Devices and Smart Systems (ICEDSS) ◽

10.1109/icedss.2018.8544366 ◽

2018 ◽

Cited By ~ 1

Author(s):

Divyam Gupta ◽

Navjeet Bagga ◽

S. Dasgupta

Keyword(s):

Comparative Study ◽

Double Gate ◽

Gate Capacitance ◽

Tunnel Fet ◽

Dual Metal

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Influence of uniaxial strain in Si and Ge p-type double-gate metal-oxide-semiconductor field effect transistors

Journal of Applied Physics ◽

10.1063/1.4930567 ◽

2015 ◽

Vol 118 (11) ◽

pp. 114503 ◽

Cited By ~ 8

Author(s):

Manel Moussavou ◽

Nicolas Cavassilas ◽

Elias Dib ◽

Marc Bescond

Keyword(s):

Metal Oxide ◽

Field Effect ◽

Field Effect Transistors ◽

Metal Oxide Semiconductor ◽

Uniaxial Strain ◽

Oxide Semiconductor ◽

Double Gate ◽

P Type

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Simulation of Retention Characteristics in Double-Gate Structure Multi-Bit SONOS Flash Memory

IEICE Transactions on Electronics ◽

10.1587/transele.e92.c.659 ◽

2009 ◽

Vol E92-C (5) ◽

pp. 659-663 ◽

Cited By ~ 1

Author(s):

Doo-Hyun KIM ◽

Il Han PARK ◽

Seongjae CHO ◽

Jong Duk LEE ◽

Hyungcheol SHIN ◽

...

Keyword(s):

Flash Memory ◽

Double Gate ◽

Gate Structure ◽

Retention Characteristics

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