SIMULATIONS OF FIELD-PLATED AND RECESSED GATE GALLIUM NITRIDE-BASED HETEROJUNCTION FIELD-EFFECT TRANSISTORS
2001 ◽
Vol 48
(3)
◽
pp. 552-559
◽
2013 ◽
Vol 1
(13)
◽
pp. 2433
◽
1984 ◽
Vol 31
(8)
◽
pp. 1015-1027
◽
2020 ◽
Vol 41
(9)
◽
pp. 1428-1431
◽