The opportunity for bulk GaN power device — Technology and application

Author(s):  
Zhen-Yu Li
2018 ◽  
Vol 12 (2) ◽  
pp. 175-178
Author(s):  
Shinichi Shikata ◽  

To achieve a 50% worldwide reduction of CO2by the middle of this century, development of energy saving power device technology using wide bandgap materials is urgently needed. Diamond is receiving increasing attention as a next generation material for wide bandgap semiconductors owing to its extreme characteristics. Research studies investigating large wafers, low resistivity, and low dislocation have accelerated. This study targets the use of wafers for power electronics applications, and the required machining technologies for diamond, including wafer shaping, slicing, and surface finishing, are introduced.


Author(s):  
H.C.-H. Wang ◽  
Shang-Jr Chen ◽  
Ming-Fang Wang ◽  
Pang-Yen Tsai ◽  
Ching-Wei Tsai ◽  
...  

2003 ◽  
Vol 764 ◽  
Author(s):  
J.B. Casady ◽  
J.R. Bonds ◽  
W.A. Draper ◽  
J.N. Merrett ◽  
I. Sankin ◽  
...  

AbstractAn overview of silicon carbide (SiC) power device technology is given with an emphasis on processing issues and commercial applications. Schottky Barrier Diodes (SBDs) were the first to be made commercially available in 2001, with power switch and RF amplifiers soon to follow. This paper discusses the performance of current available rectifiers and published power switch development and identifies key issues in processing and device structures which have influenced past and will impact future SiC product development.


2010 ◽  
pp. 123-157
Author(s):  
Josef Lutz ◽  
Heinrich Schlangenotto ◽  
Uwe Scheuermann ◽  
Rik De Doncker

2018 ◽  
pp. 149-200
Author(s):  
Josef Lutz ◽  
Heinrich Schlangenotto ◽  
Uwe Scheuermann ◽  
Rik De Doncker

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