High-Quality Microcrystalline SiC Films Fabricated by the Controlled Plasma Magnetron Method

1989 ◽  
pp. 54-59 ◽  
Author(s):  
M. Nishikuni ◽  
H. Dohjoh ◽  
K. Ninomiya ◽  
N. Nakamura ◽  
T. Matsuoka ◽  
...  
Keyword(s):  
High Quality ◽  
Sic Films

Hetero-Epitaxial Growth of 3C-SiC on Silicon Substrates by Plasma Assisted CVD

2006 ◽  
Vol 527-529 ◽  
pp. 299-302
Author(s):  
Hideki Shimizu ◽  
Yosuke Aoyama
Keyword(s):  
Substrate Temperature ◽  
Single Crystal ◽  
Epitaxial Growth ◽  
Deposition Rate ◽  
Crystalline Structure ◽  
Flow Rate ◽  
Silicon Substrates ◽  
High Quality ◽  
Sic Films ◽  
Lower Substrate Temperature

3C-SiC films grown on carbonized Si (100) by plasma-assisted CVD have been investigated with systematic changes in flow rate of monosilane (SiH4) and propane (C3H8) as source gases. The deposition rate of the films increased monotonously and the microstructures of the films changed from 3C-SiC single crystal to 3C-SiC polycrystal with increasing flow rate of SiH4. Increasing C3H8 keeps single crystalline structure but results in contamination of α-W2C, which is a serious problem for the epitaxial growth. To obtain high quality 3C-SiC films, the effects of C3H8 on the microstructures of the films have been investigated by reducing the concentration of C3H8. Good quality 3C-SiC single crystal on Si (100) is grown at low net flow rate of C3H8 and SiH4, while 3C-SiC single crystal on Si (111) is grown at low net flow rate of C3H8 and high net flow rate of SiH4. It is expected that 3C-SiC epitaxial growth on Si (111) will take placed at a higher deposition rate and lower substrate temperature than that on Si (100).

Effect of Ge on SiC Film Morphology in SiC/Si Films Grown by MOCVD

1999 ◽  
Vol 572 ◽  
Author(s):  
W. L. Samey ◽  
L. Salamanca-Riba ◽  
P. Zhou ◽  
M. G. Spencer ◽  
C. Taylor ◽  
...  
Keyword(s):  
Stacking Faults ◽  
Two Dimensional ◽  
High Quality ◽  
Flow Rates ◽  
Si Substrates ◽  
Cvd Growth ◽  
Polytype Transformation ◽  
Si Films ◽  
Sic Film ◽  
Sic Films

ABSTRACTSiC/Si films generally contain stacking faults and amorphous regions near the interface. High quality SiC/Si films are especially difficult to obtain since the temperatures usually required to grow high quality SiC are above the Si melting point. We added Ge in the form of GeH2 to the reactant gases to promote two-dimensional CVD growth of SiC films on (111) Si substrates at 1000°C. The films grown with no Ge are essentially amorphous with very small crystalline regions, whereas those films grown with GeH2 flow rates of 10 and 15 sccm are polycrystalline with the 3C structure. Increasing the flow rate to 20 sccm improves the crystallinity and induces growth of 6H SiC over an initial 3C layer. This study presents the first observation of spontaneous polytype transformation in SiC grown on Si by MOCVD.

Optimization of growth parameters for growth of high quality heteroepitaxial 3C–SiC films at 1200°C

2015 ◽  
Vol 577 ◽  
pp. 88-93 ◽  
Author(s):  
Martin Wilhelm ◽  
Marcel Rieth ◽  
Marco Brandl ◽  
Rachmat Adhi Wibowo ◽  
Rainer Hock ◽  
...  
Keyword(s):  
Growth Parameters ◽  
High Quality ◽  
Sic Films

Deterministic plasma-aided synthesis of high-quality nanoislanded nc-SiC films

2007 ◽  
Vol 90 (17) ◽  
pp. 173112 ◽  
Author(s):  
Qijin Cheng ◽  
S. Xu ◽  
Jidong Long ◽  
Kostya (Ken) Ostrikov
Keyword(s):  
High Quality ◽  
Sic Films

High-quality 6inch (111) 3C-SiC films grown on off-axis (111) Si substrates

2010 ◽  
Vol 518 (6) ◽  
pp. S165-S169 ◽  
Author(s):  
A. Severino ◽  
C. Bongiorno ◽  
N. Piluso ◽  
M. Italia ◽  
M. Camarda ◽  
...  
Keyword(s):  
High Quality ◽  
Si Substrates ◽  
Sic Films

High-Rate Rotated Epitaxy of 3C-SiC(111) on Si(110) Substrate for Qualified Epitaxial Graphene on Silicon

2013 ◽  
Vol 740-742 ◽  
pp. 327-330 ◽  
Author(s):  
Maki Suemitsu ◽  
Shota Sanbonsuge ◽  
Eiji Saito ◽  
Myung Ho Jung ◽  
Hirokazu Fukidome ◽  
...  
Keyword(s):  
Epitaxial Graphene ◽  
The Other ◽  
High Rate ◽  
Si Substrate ◽  
High Quality ◽  
Si Substrates ◽  
Growth Method ◽  
Step Growth ◽  
Sic Film ◽  
Sic Films

In the formation of epitaxial graphene on Si substrates, the growth of high-quality 3C-SiC thin films on Si substrates is a key to success. As a solution to the large mismatch between the Si substrate and the 3C-SiC film, rotated epitaxy in which 3C-SiC(111) films are grown on Si(110) substrates is quite attractive. In some applications, on the other hand, a certatin thickness (~100 nm or more) is required for this 3C-SiC films as well. A two-step growth method has been thus developed to realize a high-rate, qualified rotated epitaxy. A qualified graphene is found to be formed on this rotated epi-film, as typified by the increase of the grain size by a factor of 1.6 from the non-rotated epitaxy.

High quality β-SiC films obtained by low-temperature heteroepitaxy combined with a fast carbonization step

1999 ◽  
Vol 68 (4) ◽  
pp. 461-465 ◽  
Author(s):  
H. Möller ◽  
M. Eickhoff ◽  
M. Rapp ◽  
H.W. Grueninger ◽  
G. Krötz
Keyword(s):  
Low Temperature ◽  
High Quality ◽  
Sic Films

Homoepitaxial Growth of 4H-SiC Using a Chlorosilane Silicon Precursor

2006 ◽  
Vol 527-529 ◽  
pp. 175-178 ◽  
Author(s):  
Mike F. MacMillan ◽  
Mark J. Loboda ◽  
Gil Yong Chung ◽  
E.P. Carlson ◽  
Jian Wei Wan
Keyword(s):  
Growth Rate ◽  
Flow Rate ◽  
Gas Composition ◽  
High Quality ◽  
Homoepitaxial Growth ◽  
Dopant Incorporation ◽  
Effects Of Temperature ◽  
Temperature And Pressure ◽  
P Type ◽  
Sic Films

Epitaxial growth of SiC films was performed on 4H SiC n+ substrates utilizing a chlorosilane/propane chemistry in both single wafer and batch CVD systems. Variations of the chlorosilane flow under fixed conditions of gas composition, temperature and pressure resulted in growth rates between 4 to 20 μm/hr. Fixing the chlorosilane flow rate to achieve a growth rate of approximately 4 μm/hr, the effects of temperature, pressure and gas composition on background dopant incorporation, epitaxial layer uniformity and epitaxial defect generation were investigated. Intentional n and p-type doping has been demonstrated over the carrier range 1×1018-1×1020/cm3. This paper presents the first reported of use of chlorosilane precursors to grow high quality undoped, n and p doped SiC epilayers.

High-Quality p-Type a-SiC Films Obtained by Using a New Doping Gas of B(CH3)3

1989 ◽  
Vol 28 (Part 1, No. 12) ◽  
pp. 2436-2440 ◽  
Author(s):  
Hisaki Tarui ◽  
Takao Matsuyama ◽  
Shingo Okamoto ◽  
Hiroshi Dohjoh ◽  
Yoshihiro Hishikawa ◽  
...  
Keyword(s):  
Type A ◽  
High Quality ◽  
P Type ◽  
Sic Films

Some problems of objective-prism spectra classification

1966 ◽  
Vol 24 ◽  
pp. 51-52
Author(s):  
E. K. Kharadze ◽  
R. A. Bartaya
Keyword(s):  
Short Wave ◽  
High Quality ◽  
Stellar Spectra ◽  
Objective Prism

The unique 70-cm meniscus-type telescope of the Abastumani Astrophysical Observatory supplied with two objective prisms and the seeing conditions characteristic at Mount Kanobili (Abastumani) permit us to obtain stellar spectra of a high quality. No additional design to improve the “climate” immediately around the telescope itself is being applied. The dispersions and photographic magnitude limits are 160 and 660Å/mm, and 12–13, respectively. The short-wave end of spectra reaches 3500–3400Å.

Sign in / Sign up

Export Citation Format

Share Document