β-Silicon Carbide Prepared by Rapid Thermal Chemical Vapor Deposition

1989 ◽  
pp. 20-25
Author(s):  
J. C. Liao ◽  
J. L. Crowley ◽  
P. H. Klein
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition

Silicon carbide layers produced by rapid thermal chemical vapor deposition

1991 ◽  
Author(s):  
F. H. Ruddell ◽  
D. McNeill ◽  
Brian M. Armstrong ◽  
Harold S. Gamble
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition

Heteroepitaxial silicon-carbide nitride films with different carbon sources on silicon substrates prepared by rapid-thermal chemical-vapor deposition

2002 ◽  
Vol 31 (12) ◽  
pp. 1341-1346 ◽  
Author(s):  
Shyh-Fann Ting ◽  
Yean-Kuen Fang ◽  
Wen-Tse Hsieh ◽  
Yong-Shiuan Tsair ◽  
Cheng-Nan Chang ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Carbon Sources ◽  
Chemical Vapor ◽  
Silicon Substrates ◽  
Thermal Chemical Vapor Deposition

Thermal Chemical Vapor Deposition of Silicon Carbide Films as Protective Coatings for Microfluidic Structures

2002 ◽  
Vol 742 ◽  
Author(s):  
Spyros Gallis ◽  
Ulrike Futschik ◽  
James Castracane ◽  
Alain E. Kaloyeros ◽  
Harry Efstathiadis ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Film Thickness ◽  
Vapor Deposition ◽  
Protective Coatings ◽  
Microstructural Analysis ◽  
Chemical Vapor ◽  
Thermal Chemical Vapor Deposition ◽  
Micro Systems ◽  
Sic Films

ABSTRACTAmorphous silicon carbide (SiC) films were deposited on silicon substrates by thermal chemical vapor deposition (TCVD) technique, at substrate temperatures ranging from 620 °C - 850 °C. A novel, single-source halide free precursor, SP-4000, belonging to the family of polysilenemethylenes (PSM) (nominal structure [-SiH2-CH2-]n, n = 2–8 including branched and cyclic isomers) was used as source. Argon was used, as both the precursor carrier gas and the dilution gas. Other reactants, such as hydrogen or hydrocarbons, were not used. The deposition yielded films with Si/C ratio of 1±0.2. The highest achieved growth rate was 83 nm/min.The modulus of elasticity and the nanohardness of the SiC films were measured with the aid of a nanoindenter at various depths, which did not exceed 25% of the film thickness. The average nanohardness at indentation depths of approximately 10% of the film thickness was measured up to 13 ± 4 GPa. The results of the nanoindentation will be discussed in conjunction with the microstructural analysis of the films.In addition, the development of a viable TCVD SiC process presents significant opportunities in the nano/micro systems field. In particular, the ability to custom tailor the surfaces of microfluidic structures allows for the development of valves, pumps and channels for use in corrosive or high temperature environments. Initial results from the deposition of SiC films on prototype microfluidic components will be presented.

Silicon Carbide Structures Prepared by Rapid Thermal Chemical Vapor Deposition

1989 ◽  
Vol 146 ◽  
Author(s):  
J.L. Crowley ◽  
J.C. Liao ◽  
P.H. Kleins ◽  
G.J. Campisi
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Single Crystal ◽  
Optical Phonon ◽  
Vapor Deposition ◽  
Single Crystal Silicon ◽  
Chemical Vapor ◽  
Longitudinal Optical Phonon ◽  
Crystal Silicon ◽  
Thermal Chemical Vapor Deposition

ABSTRACTThe deposition of beta Silicon Carbide unto single crystal silicon (100) wafers using rapid thermal chemical vapor deposition (RTCVD) has been carried out using silane and ethylene as the source gases. Deposition temperatures were varid from 1100°C to 1300°C. Auger analysis revealed the silicon carbide films to be stoichiometric at all temperatures. Infrared spectroscopy data taken between 1200 cm−1 and 60° Cm−1 show the appearance of the longitudinal optical phonon at 974 cm−1 and the transverse optical phonon at 794 cm−1 in samples deposited at 1200°C and above. Stress in the films deposited on the single crystal silicon substrates is seen to go from zero or slightly compressive at 11O0°C to strongly tensile at 1300°C.

Modeling of silicon carbide chemical vapor deposition in a vertical reactor

1999 ◽  
Vol 61-62 ◽  
pp. 172-175 ◽  
Author(s):  
A.N. Vorob’ev ◽  
Yu.E. Egorov ◽  
Yu.N. Makarov ◽  
A.I. Zhmakin ◽  
A.O. Galyukov ◽  
...  
Keyword(s):  
Silicon Carbide ◽  
Chemical Vapor Deposition ◽  
Vapor Deposition ◽  
Chemical Vapor
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