2016 IEEE Symposium on VLSI Technology
Latest Publications

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9781509006380

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First demonstration and performance improvement of ferroelectric HfO2-based resistive switch with low operation current and intrinsic diode property

2016 IEEE Symposium on VLSI Technology ◽

10.1109/vlsit.2016.7573413 ◽

2016 ◽

Cited By ~ 12

Author(s):

Shosuke Fujii ◽

Yuuichi Kamimuta ◽

Tsunehiro Ino ◽

Yasushi Nakasaki ◽

Riichiro Takaishi ◽

...

Keyword(s):

Performance Improvement ◽

Resistive Switch ◽

And Performance

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The age of sensors - How MEMS sensors will enable the next wave of new products.

2016 IEEE Symposium on VLSI Technology ◽

10.1109/vlsit.2016.7573357 ◽

2016 ◽

Cited By ~ 1

Author(s):

Stephen Lloyd ◽

Martin Lim

Keyword(s):

New Products ◽

Mems Sensors

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First demonstration of a CMOS over CMOS 3D VLSI CoolCube™ integration on 300mm wafers

2016 IEEE Symposium on VLSI Technology ◽

10.1109/vlsit.2016.7573428 ◽

2016 ◽

Cited By ~ 16

Author(s):

L. Brunet ◽

P. Batude ◽

C. Fenouillet-Beranger ◽

P. Besombes ◽

L. Hortemel ◽

...

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Gate stack solutions in gate-first FDSOI technology to meet high performance, low leakage, VT centering and reliability criteria

2016 IEEE Symposium on VLSI Technology ◽

10.1109/vlsit.2016.7573434 ◽

2016 ◽

Author(s):

O. Weber ◽

E. Josse ◽

X. Garros ◽

M. Rafik ◽

X. Federspiel ◽

...

Keyword(s):

High Performance ◽

Gate Stack ◽

Low Leakage

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Comprehensive evaluation of early retention (fast charge loss within a few seconds) characteristics in tube-type 3-D NAND flash memory

2016 IEEE Symposium on VLSI Technology ◽

10.1109/vlsit.2016.7573385 ◽

2016 ◽

Cited By ~ 2

Author(s):

Bongsik Choi ◽

Sang Hyun Jang ◽

Jinsu Yoon ◽

Juhee Lee ◽

Minsu Jeon ◽

...

Keyword(s):

Flash Memory ◽

Comprehensive Evaluation ◽

Nand Flash ◽

Nand Flash Memory ◽

Fast Charge ◽

Charge Loss ◽

Tube Type ◽

Early Retention ◽

Type 3

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Ultra low p-type SiGe contact resistance FinFETs with Ti silicide liner using cryogenic contact implantation amorphization and Solid-Phase Epitaxial Regrowth (SPER)

2016 IEEE Symposium on VLSI Technology ◽

10.1109/vlsit.2016.7573384 ◽

2016 ◽

Cited By ~ 10

Author(s):

Y.R. Yang ◽

N. Breil ◽

C.Y. Yang ◽

J. Hsieh ◽

F. Chiang ◽

...

Keyword(s):

Contact Resistance ◽

Solid Phase ◽

Epitaxial Regrowth ◽

P Type

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GDOT: A graphene-based nanofunction for dot-product computation

2016 IEEE Symposium on VLSI Technology ◽

10.1109/vlsit.2016.7573377 ◽

2016 ◽

Cited By ~ 6

Author(s):

Ning C. Wang ◽

Sujan K. Gonugondla ◽

Ihab Nahlus ◽

Naresh R. Shanbhag ◽

Eric Pop

Keyword(s):

Dot Product

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Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells

2016 IEEE Symposium on VLSI Technology ◽

10.1109/vlsit.2016.7573409 ◽

2016 ◽

Cited By ~ 10

Author(s):

A. Veloso ◽

B. Parvais ◽

P. Matagne ◽

E. Simoen ◽

T. Huynh-Bao ◽

...

Keyword(s):

Rf Applications

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Top-down InGaAs nanowire and fin vertical FETs with record performance

2016 IEEE Symposium on VLSI Technology ◽

10.1109/vlsit.2016.7573419 ◽

2016 ◽

Cited By ~ 4

Author(s):

S. Ramesh ◽

Ts. Ivanov ◽

E. Camerotto ◽

N. Sun ◽

J. Franco ◽

...

Keyword(s):

Top Down

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Robust Cu atom switch with over-400°C thermally tolerant polymer-solid electrolyte (TT-PSE) for nonvolatile programmable logic

2016 IEEE Symposium on VLSI Technology ◽

10.1109/vlsit.2016.7573403 ◽

2016 ◽

Cited By ~ 4

Author(s):

K. Okamoto ◽

M. Tada ◽

N. Banno ◽

N. Iguchi ◽

H. Hada ◽

...

Keyword(s):

Solid Electrolyte ◽

Programmable Logic

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2016 IEEE Symposium on VLSI TechnologyLatest Publications

TOTAL DOCUMENTS

H-INDEX

Published By IEEE

First demonstration and performance improvement of ferroelectric HfO2-based resistive switch with low operation current and intrinsic diode property

The age of sensors - How MEMS sensors will enable the next wave of new products.

First demonstration of a CMOS over CMOS 3D VLSI CoolCube™ integration on 300mm wafers

Gate stack solutions in gate-first FDSOI technology to meet high performance, low leakage, VT centering and reliability criteria

Comprehensive evaluation of early retention (fast charge loss within a few seconds) characteristics in tube-type 3-D NAND flash memory

Ultra low p-type SiGe contact resistance FinFETs with Ti silicide liner using cryogenic contact implantation amorphization and Solid-Phase Epitaxial Regrowth (SPER)

GDOT: A graphene-based nanofunction for dot-product computation

Junctionless gate-all-around lateral and vertical nanowire FETs with simplified processing for advanced logic and analog/RF applications and scaled SRAM cells

Top-down InGaAs nanowire and fin vertical FETs with record performance

Robust Cu atom switch with over-400°C thermally tolerant polymer-solid electrolyte (TT-PSE) for nonvolatile programmable logic

2016 IEEE Symposium on VLSI Technology
Latest Publications