A new conduction mechanism for the anomalous cells in thin oxide flash EEPROMs

2002 ◽  
Author(s):  
A. Modelli ◽  
F. Gilardoni ◽  
D. Ielmini ◽  
A.S. Spinelli
Keyword(s):  
Conduction Mechanism ◽  
Thin Oxide

Post-breakdown conduction mechanism of thin oxide films and their aspects

2003 ◽  
Vol 86 (3) ◽  
pp. 21-27
Author(s):  
Kenji Komiya ◽  
Takashi Oka ◽  
Naoki Okada ◽  
Yasuhisa Omura
Keyword(s):  
Conduction Mechanism ◽  
Oxide Films ◽  
Thin Oxide Films ◽  
Thin Oxide

Numerical analysis for conduction mechanism of thin oxide-nitride-oxide films formed on rough poly-Si

1996 ◽  
Vol 17 (2) ◽  
pp. 56-58 ◽  
Author(s):  
N. Matsuo ◽  
H. Fujiwara ◽  
T. Miyoshi ◽  
T. Koyanagi
Keyword(s):  
Numerical Analysis ◽  
Conduction Mechanism ◽  
Oxide Films ◽  
Thin Oxide ◽  
Nitride Oxide

Surface Potential Control on Thin Oxide Films with Respect to Electron Stimulated Desorption Studies

1995 ◽  
Vol 5 (9) ◽  
pp. 1407-1424 ◽  
Author(s):  
Marc Bernheim ◽  
Gilles Rousse
Keyword(s):  
Surface Potential ◽  
Oxide Films ◽  
Potential Control ◽  
Thin Oxide Films ◽  
Thin Oxide ◽  
Electron Stimulated Desorption

Development of Backside Scanning Capacitance Microscopy Technique for Advanced SOI Microprocessors

2006 ◽  
Author(s):  
Vinod Narang ◽  
P. Muthu ◽  
J.M. Chin ◽  
Vanissa Lim
Keyword(s):  
Plasma Etching ◽  
Data Interpretation ◽  
Parameters Optimization ◽  
Scanning Capacitance Microscopy ◽  
Microscopy Technique ◽  
Thermal Oxide ◽  
Specific Analysis ◽  
Thin Oxide ◽  
P Type ◽  
Uv Ozone

Abstract Implant related issues are hard to detect with conventional techniques for advanced devices manufactured with deep sub-micron technology. This has led to introduction of site-specific analysis techniques. This paper presents the scanning capacitance microscopy (SCM) technique developed from backside of SOI devices for packaged products. The challenge from backside method includes sample preparation methodology to obtain a thin oxide layer of high quality, SCM parameters optimization and data interpretation. Optimization of plasma etching of buried oxide followed by a new method of growing thin oxide using UV/ozone is also presented. This oxidation method overcomes the limitations imposed due to packaged unit not being able to heat to high temperature for growing thermal oxide. Backside SCM successfully profiled both the n and p type dopants in both cache and core transistors.

AC conductivity and conduction mechanism study of rubidium gadolinium diphosphate compound

2018 ◽  
Vol 93 (5) ◽  
pp. 603-610 ◽  
Author(s):  
Samia Mathlouthi ◽  
Abderrazek Oueslati ◽  
Bassem Louati
Keyword(s):  
Ac Conductivity ◽  
Conduction Mechanism ◽  
Mechanism Study

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Study of conduction mechanism in p-Zn1-xSbxO/n-Si− (x = 0.00, 0.03, 0.05) hetero-junction devices

2021 ◽  
Vol 32 (18) ◽  
pp. 23232-23245
Author(s):  
Ishpal Rawal ◽  
Vipin Kumar ◽  
Vinod Kumar ◽  
Prikshit Gautam ◽  
Vijay Kumar Sharma
Keyword(s):  
Conduction Mechanism

Variable Temperature Measurement on Operating Pentacene-Based OTFT

2008 ◽  
Vol 1091 ◽  
Author(s):  
Hung-Keng Chen ◽  
Po-Tsun Liu ◽  
Ting-Chang Chang ◽  
S.-L. Shy
Keyword(s):  
Conduction Mechanism ◽  
Variable Temperature ◽  
Electrical Measurement ◽  
Isokinetic Temperature ◽  
Trap States ◽  
Band Tail ◽  
Thermally Activated ◽  
Multiple Trapping ◽  
Higher Temperature ◽  
Release Model

AbstractVariable temperature electrical measurement is well-established and used for determining the conduction mechanism in semiconductors. There is a Meyer¡VNeldel relationship between the activation energy and the prefactor with a Meyer¡VNeldel energy of 30.03 meV, which corresponds well with the isokinetic temperature of about 350 K. Therefore, the multiple trapping and release model is properly used to explain the thermally activated phenomenon. By the method, an exponential distribution of traps is assumed to be a better representation of trap states in band tail. Samples with higher temperature during measurement are observed to show better mobility, higher on-current and lower resistance, which agree well with the multiple trapping and release model proposed to explain the conduction mechanism in pentacene-based OTFTs.

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