Comparison of Electrical Characteristics of 4H-SiC(0001) and (000-1) Schottky Barrier Diodes

Electrical characteristics of 4H-SiC Schottky barrier diodes, based on buried grid design are presented. The diodes, rated to 1200V/10A and assembled into high temperature capable TO254 packages, have been tested and studied up to 250°C. Compared to conventional SiC Schottky diodes, Ascatron's buried grid SiC Schottky diode demonstrates several orders of magnitude reduced leakage current at high temperature operation.

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Electrical Characteristics of AlGaN/GaN Schottky Barrier Diodes with Different Capping Layers

Journal of Nanoscience and Nanotechnology ◽

10.1166/jnn.2016.13565 ◽

2016 ◽

Vol 16 (11) ◽

pp. 11635-11639

Author(s):

Taeyoung Yang ◽

Minjun Kim ◽

Jae Hoon Lee ◽

Sohyeon Kim ◽

Kyoung-Kook Kim ◽

...

Keyword(s):

Schottky Barrier ◽

Electrical Characteristics ◽

Schottky Barrier Diodes

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Effect of annealing temperature on the electrical characteristics of Platinum/4H-SiC Schottky barrier diodes

International Journal of Electronics ◽

10.1080/00207217.2011.609963 ◽

2011 ◽

Vol 98 (12) ◽

pp. 1733-1741 ◽

Cited By ~ 12

Author(s):

S. Khanna ◽

A. Noor ◽

S. Neeleshwar ◽

M.S. Tyagi

Keyword(s):

Schottky Barrier ◽

Annealing Temperature ◽

Electrical Characteristics ◽

Schottky Barrier Diodes

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TEMPERATURE DEPENDENCE OF ELECTRICAL CHARACTERISTICS OF Cr/p–Si(100) SCHOTTKY BARRIER DIODES

International Journal of Modern Physics B ◽

10.1142/s0217979208039496 ◽

2008 ◽

Vol 22 (14) ◽

pp. 2309-2319 ◽

Cited By ~ 1

Author(s):

K. ERTURK ◽

M. C. HACIISMAILOGLU ◽

Y. BEKTORE ◽

M. AHMETOGLU

Keyword(s):

Temperature Dependence ◽

Schottky Barrier ◽

Barrier Height ◽

Thermionic Emission ◽

Electrical Characteristics ◽

Schottky Barrier Diodes ◽

Semiconductor Interface ◽

Linear Portion ◽

Barrier Heights ◽

P Type

The electrical characteristics of Cr / p – Si (100) Schottky barrier diodes have been measured in the temperature range of 100–300 K. The I-V analysis based on thermionic emission (TE) theory has revealed an abnormal decrease of apparent barrier height and increase of ideality factor at low temperature. The conventional Richardson plot exhibits non-linearity below 200 K with the linear portion corresponding to activation energy 0.304 eV and Richardson constant (A*) value of 5.41×10-3 Acm-2 K -2 is determined from the intercept at the ordinate of this experimental plot, which is much lower than the known value of 32 Acm-2 K -2 for p-type Si . It is demonstrated that these anomalies result due to the barrier height inhomogeneities prevailing at the metal-semiconductor interface. Hence, it has been concluded that the temperature dependence of the I-V characteristics of the Cr/p – Si Schottky barrier diode can be successfully explained on the basis of TE mechanism with a Gaussian distribution of the barrier heights. Furthermore, the value of the Richardson constant found is much closer than that obtained without considering the inhomogeneous barrier heights.

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