Polytype Control in 6H-SiC Grown via Sublimation Method

2006 ◽  
pp. 95-98
Author(s):  
Xian Xiang Li ◽  
Shou Zhen Jiang ◽  
Xiao Bo Hu ◽  
Jie Dong ◽  
Juan Li ◽  
...  
Keyword(s):  
Sublimation Method

The effect of etchants on surface of CdTe single crystal

2016 ◽  
Vol 12 (1) ◽  
pp. 4145-4147
Author(s):  
S. Javad Mousavi
Keyword(s):  
Single Crystal ◽  
Cadmium Telluride ◽  
Etch Pits ◽  
Cdte Single Crystal ◽  
Sublimation Method ◽  
Crystallographic Defect

Cadmium telluride crystals (CdTe) have been grown by the sublimation method. The crystal polarity of the CdTe with the zincblend structure has been studied. Two different crystallographic defect and etch pits are revealed on the (111) Cd and  Te surfaces by different etchant.

SiC Epitaxial Layers Grown by Sublimation Method and their Electrical Properties

2007 ◽  
Vol 556-557 ◽  
pp. 153-156
Author(s):  
Chi Kwon Park ◽  
Gi Sub Lee ◽  
Ju Young Lee ◽  
Myung Ok Kyun ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Electrical Properties ◽  
Epitaxial Layer ◽  
Light Emission ◽  
Epitaxial Layers ◽  
Current Voltage ◽  
Space Technique ◽  
Sublimation Method ◽  
Device Applications ◽  
P Type ◽  
Surface Morphologies

A sublimation epitaxial method, referred to as the Closed Space Technique (CST) was adopted to produce thick SiC epitaxial layers for power device applications. In this study, we aimed to systematically investigate surface morphologies and electrical properties of SiC epitaxial layers grown with varying a SiC/Al ratio in a SiC source powder during the sublimation growth using the CST method. It was confirmed that the acceptor concentration of epitaxial layer was continuously decreased with increasing the SiC/Al ratio. The blue light emission was successfully observed on a PN diode structure fabricated with the p-type SiC epitaxial layer. Furthermore, 4H-SiC MESFETs having a micron-gate length were fabricated using a lithography process and their current-voltage performances were characterized.

The Method for Enhancing Nitrogen Doping in 6H-SiC Single Crystals Grown by Sublimation Process: The Effect of Si Addition in SiC Powder Source

2006 ◽  
Vol 527-529 ◽  
pp. 55-58 ◽  
Author(s):  
Kwan Mo Kim ◽  
Soo Hyung Seo ◽  
Jae Woo Kim ◽  
Joon Suk Song ◽  
Myung Hwan Oh ◽  
...  
Keyword(s):  
Thermal Treatment ◽  
Single Crystals ◽  
Nitrogen Doping ◽  
Doping Concentration ◽  
Silicon Powder ◽  
Mixed Powder ◽  
Nitrogen Doped ◽  
Sublimation Method ◽  
Si Content ◽  
Si Addition

The variation of nitrogen doping concentration was systematically investigated with respect to the amount of silicon powder added to the SiC powder for growing n-type 6H-SiC single crystal by the sublimation method. To change intentionally the Si content in the SiC powder, 0wt% to 2wt% of a silicon powder was added to first-thermal treated SiC powder and the mixed powder was treated again at 1800oC for 3 hours to eliminate excess free-metallic silicon. Nitrogen doped 6H-SiC single crystals were grown by using 2nd-thermal treatment SiC powder at fixed N2/(Ar + N2) (3%). The nitrogen doping concentration of 6H-SiC crystals increased with increasing Si content in the SiC powder. In this work, we could identify that the additional silicon powder in SiC powder plays a role in the enhancement of nitrogen doping in 6H-SiC crystals grown by the sublimation method.

Effects of Bleed Flow on Heat/Mass Transfer in a Rotating Rib-Roughened Channel

2006 ◽  
Vol 129 (3) ◽  
pp. 636-642 ◽  
Author(s):  
Yun Heung Jeon ◽  
Suk Hwan Park ◽  
Kyung Min Kim ◽  
Dong Hyun Lee ◽  
Hyung Hee Cho
Keyword(s):  
Mass Transfer ◽  
Heat Mass Transfer ◽  
Local Heat Transfer ◽  
Local Heat ◽  
Main Flow ◽  
Hydraulic Diameter ◽  
Transfer Coefficients ◽  
Square Channel ◽  
Rib Turbulators ◽  
Sublimation Method

The present study investigates the effects of bleed flow on heat/mass transfer and pressure drop in a rotating channel with transverse rib turbulators. The hydraulic diameter (Dh) of the square channel is 40.0mm. 20 bleed holes are midway between the rib turburators on the leading surface and the hole diameter (d) is 4.5mm. The square rib turbulators are installed on both leading and trailing surfaces. The rib-to-rib pitch (p) is 10.0 times of the rib height (e) and the rib height-to-hydraulic diameter ratio (e∕Dh) is 0.055. The tests were conducted at various rotation numbers (0, 0.2, 0.4), while the Reynolds number and the rate of bleed flow to main flow were fixed at 10,000 and 10%, respectively. A naphthalene sublimation method was employed to determine the detailed local heat transfer coefficients using the heat/mass transfer analogy. The results suggest that for a rotating ribbed passage with the bleed flow of BR=0.1, the heat/mass transfer on the leading surface is dominantly affected by rib turbulators and the secondary flow induced by rotation rather than bleed flow. The heat/mass transfer on the trailing surface decreases due to the diminution of main flow. The results also show that the friction factor decreases with bleed flow.

scholarly journals Single CdTe microwire photodetectors grown by close-spaced sublimation method

2014 ◽  
Vol 22 (16) ◽  
pp. 18843 ◽  
Author(s):  
Gwangseok Yang ◽  
Byung-Jae Kim ◽  
Donghwan Kim ◽  
Jihyun Kim
Keyword(s):  
Sublimation Method

Detailed Heat/Mass Transfer Distributions in a Rotating Smooth Channel With Bleed Flow

2007 ◽  
Vol 129 (11) ◽  
pp. 1538-1545 ◽  
Author(s):  
Kyung Min Kim ◽  
Sang In Kim ◽  
Yun Heung Jeon ◽  
Dong Hyun Lee ◽  
Hyung Hee Cho
Keyword(s):  
Mass Transfer ◽  
Heat Mass Transfer ◽  
Internal Cooling ◽  
Transfer Coefficients ◽  
Square Channel ◽  
Smooth Channel ◽  
Naphthalene Sublimation ◽  
Sublimation Method ◽  
Cooling Passage ◽  
Internal Cooling Passage

In this study, the effects of bleed flow on heat/mass transfer in a rotating smooth square channel were investigated. The hydraulic diameter (Dh) of the channel was 40.0mm, and the diameter of the bleed holes (d) on the leading surface was 4.5mm. Tests were conducted under various bleed flow rates (0%, 10%, 20%) and rotation numbers (0, 0.2, 0.4), while the Reynolds number was fixed at 10,000. A naphthalene sublimation method was employed to determine the detailed heat transfer coefficients using a heat and mass transfer analogy. The results suggested heat/mass transfer characteristics in the internal cooling passage to be influenced by tripping flow as well as Coriolis force induced by bleed flow and channel rotation. In cases influenced by bleed flow, the heat/mass transfer on the leading surface was higher than that without bleed flow. The heat/mass transfer on the leading surface increased with the number of rotations to Ro=0.2, after which it decreased due to rotation effects.

SiC Crystal Growth by Sublimation Method with Modification of Crucible and Insulation Felt Design

2005 ◽  
pp. 47-50
Author(s):  
Jung Kyu Kim ◽  
Kap Ryeol Ku ◽  
Dong Jin Kim ◽  
Sang Phil Kim ◽  
Won Jae Lee ◽  
...  
Keyword(s):  
Crystal Growth ◽  
Sublimation Method
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