Influence of interfacial structure on electrical properties of metal/Ge Schottky contacts

Author(s):  
Osamu Nakatsuka ◽  
Shingo Akimoto ◽  
Tsuyoshi Nishimura ◽  
Shigeaki Zaima
2008 ◽  
Vol 600-603 ◽  
pp. 1341-1344 ◽  
Author(s):  
Fabrizio Roccaforte ◽  
Ferdinando Iucolano ◽  
Filippo Giannazzo ◽  
Salvatore di Franco ◽  
Valeria Puglisi ◽  
...  

In this work, the electrical properties of Pt/GaN Schottky contacts were studied. The temperature dependence of the barrier height and ideality factor, and the low experimental value of the Richardson’s constant, were discussed considering the formation of an inhomogenous Schottky barrier. Local current-voltage measurements on Pt/GaN contact, performed with a conductive atomic force microscope, demonstrated a Gaussian distribution of the local barrier height values and allowed to monitor the degree of inhomogeneity of the barrier. The presence of defects, terminating on the bare GaN surface, was correlated with the electrical behavior of the inhomogeneous barrier.


2008 ◽  
Vol 47 (4) ◽  
pp. 2402-2406 ◽  
Author(s):  
Osamu Nakatsuka ◽  
Atsushi Suzuki ◽  
Shingo Akimoto ◽  
Akira Sakai ◽  
Masaki Ogawa ◽  
...  

2020 ◽  
Vol 67 (12) ◽  
pp. 5669-5675
Author(s):  
Hiep N. Tran ◽  
Phuong Y. Le ◽  
Billy James Murdoch ◽  
Martin W. Allen ◽  
Christopher F. McConville ◽  
...  

2021 ◽  
pp. 162817
Author(s):  
Yuan Ren ◽  
Zhiyuan He ◽  
Bin Dong ◽  
Changan Wang ◽  
Zhaohui Zeng ◽  
...  

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