Nonvolatile Memories Using Single Electron Tunneling Effects in Si Quantum Dots Inside Tunnel Silicon Oxide

Author(s):  
Ryuji Ohba
1997 ◽  
Vol 36 (Part 1, No. 6B) ◽  
pp. 4038-4041 ◽  
Author(s):  
Amit Dutta ◽  
Masao Kimura ◽  
Yoshiaki Honda ◽  
Masanori Otobe ◽  
Akira Itoh ◽  
...  

2011 ◽  
Vol 21 (15) ◽  
pp. 2933-2937 ◽  
Author(s):  
Ryoma Hayakawa ◽  
Nobuya Hiroshiba ◽  
Toyohiro Chikyow ◽  
Yutaka Wakayama

1997 ◽  
Vol 71 (11) ◽  
pp. 1469-1471 ◽  
Author(s):  
Kang-Ho Park ◽  
Jeong Sook Ha ◽  
Wan Soo Yun ◽  
Mincheol Shin ◽  
Kyoung-Wan Park ◽  
...  

2004 ◽  
Vol 93 (6) ◽  
Author(s):  
T. Ota ◽  
K. Ono ◽  
M. Stopa ◽  
T. Hatano ◽  
S. Tarucha ◽  
...  

2012 ◽  
Vol 27 (01) ◽  
pp. 1350008 ◽  
Author(s):  
QIONG MA ◽  
TAO TU ◽  
LI WANG ◽  
CHEN ZHOU ◽  
ZHI-RONG LIN ◽  
...  

We study the conductance spectrum of graphene quantum dots, both single- and multiple-dot cases. The single electron tunneling through a graphene dot is investigated and the periodicity, amplitude and line shape of the Coulomb blockade oscillations at low temperatures are obtained, which are consistent with the recent experimental observations. Further, we discuss the transport behavior when multiple dots are assembled in array and find a phase transition of conductance spectra from individual Coulomb blockade to collective Coulomb blockade.


1992 ◽  
Vol 31 (Part 2, No. 6B) ◽  
pp. L759-L761 ◽  
Author(s):  
Shingo Katsumoto ◽  
Naokatsu Sano ◽  
Shun-ichi Kobayashi

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