Wet Chemical Cleaning for Industrial Application

2021 ◽  
pp. 115-160
Author(s):  
Florian Buchholz ◽  
Eckard Wefringhaus ◽  
Martin Plettig
Keyword(s):  
Industrial Application ◽  
Chemical Cleaning ◽  
Wet Chemical

Wet chemical cleaning of InP surfaces investigated byin situandex situinfrared spectroscopy

2003 ◽  
Vol 94 (4) ◽  
pp. 2707-2715 ◽  
Author(s):  
O. Pluchery ◽  
Y. J. Chabal ◽  
R. L. Opila
Keyword(s):  
Chemical Cleaning ◽  
Wet Chemical

‘Just-Clean-Enough’: Optimization of Wet Chemical Cleaning Processes for Crystalline Silicon Solar Cells

2016 ◽  
Vol 255 ◽  
pp. 344-347 ◽  
Author(s):  
Michael Haslinger ◽  
M. Soha ◽  
S. Robert ◽  
M. Claes ◽  
Paul W. Mertens ◽  
...  
Keyword(s):  
Solar Cells ◽  
High Efficiency ◽  
Crystalline Silicon ◽  
Silicon Solar Cells ◽  
Semiconductor Surface ◽  
Cleaning Process ◽  
Chemical Cleaning ◽  
Crystalline Silicon Solar Cells ◽  
Metal Impurities ◽  
Wet Chemical

Advanced concepts for photovoltaic silicon solar cells, especially high-efficiency n-type solar cells, requires appropriate wet cleaning treatment in order to remove metallic contamination prior to high temperature processes like diffusion and passivation [1]. The cost of the cleaning process should be as low as possible that requires an optimized usage of the chemicals by increasing process tank lifetimes and developing dedicated feed and bleed recipes. The just clean enough concept has been developed to fulfil the needs of PV industry to minimize the consumption of chemicals. When the dominant contamination metal is identified in quality and quantity, a dedicated wet chemical cleaning process can be applied to remove the metal concentration from the semiconductor surface under a specified limit with the minimum volume on cleaning solution. The paper describes how to optimize a dedicated wet cleaning process for prominent metal impurities like Fe, Cu, Cr, Ti, Co and Zn. For each metal an exchange volume is determined to develop a feed and bleed recipe. The accumulation of the metal impurities in the process tank is calculated and process tank lifetimes are predicted.

In-situ AFM study of the crystallization and pH-dependent stability of ZnO(0001)-Zn surfaces

2007 ◽  
Vol 1035 ◽  
Author(s):  
Markus Valtiner ◽  
Guido Grundmeier
Keyword(s):  
Electrolyte Solutions ◽  
Ex Situ ◽  
Chemical Cleaning ◽  
Single Crystalline ◽  
Afm Imaging ◽  
Wide Range ◽  
Wet Chemical ◽  
Ph Dependent ◽  
Crystalline Surfaces

AbstractPolar ZnO(0001)-Zn surfaces can be prepared as very well defined and single crystalline surfaces by hydroxide stabilization simply by introducing hydroxides via a wet chemical cleaning step. Within this proceeding we present an in-situ AFM imaging of the crystallization process. The pH dependent stability of the resulting hydroxide-stabilized surfaces was further investigated by means of an ex-situ LEED approach. These investigations show, that it is possible to obtain high quality single crystalline ZnO(0001)-Zn surfaces in a simple way. Moreover, these surfaces turned out to be very stable within a wide range of pH values between 11 and 3 of NaClO4 based 1mM electrolyte solutions.

H-passivation of Si(100) By Wet Chemical Cleaning: Discovery of Ordering

1998 ◽  
Vol 513 ◽  
Author(s):  
V. Atluri ◽  
N. Herbots
Keyword(s):  
Ion Beam ◽  
Elastic Recoil ◽  
Signal To Noise ◽  
Chemical Cleaning ◽  
Elastic Recoil Detection ◽  
Ion Channeling ◽  
Atomic Force ◽  
Beam Analysis ◽  
Wet Chemical ◽  
First Time

ABSTRACTSi(100) is H-passivated via a modified pre-RCA cleaning followed by etching in HF:alcohol, to produce ordered (1 × 1) templates which desorb at low temperature (T ≥ 600°C). Four sets of 12 wafers, each set processed identically, are used to test reproducibility, and are characterized by Ion Beam Analysis (IBA), Tapping Mode Atomic Force Microscope (TMAFM), and Fourier Transform Infrared Spectroscopy (FTIR). The absolute coverage of oxygen and carbon is measured by ion channeling combined with nuclear resonance at 3.05 MeV for oxygen and 4.265 MeV for carbon, improving the signal to noise by a factor 10 for oxygen and by 120 for carbon. It is then possible for the first time to measure ordering of oxygen atoms with respect to the surface by comparing the amount of oxygen from rotating random spectra to the disordered oxygen measured by channeling. Hydrogen is measured via the elastic recoil detection (ERD) of 4He2+ at 2.8 MeV.Si(100) etched in HF:methanol after a modified preliminary RCA cleaning yields the cleanest surface. The data suggest that Si(100) passivated by HF in alcohol is terminated by an ordered hydroxide layer, which desorbs at lower temperatures than the more refractory Si02.

Influence of Wet Chemical Cleaning on Properties of Magnetic Tunnel Junction Stack for Magnetic RAM

2004 ◽  
Vol 7 (5) ◽  
pp. C64 ◽  
Author(s):  
Young Soo Song ◽  
Sang Jin Park ◽  
Tae Wan Kim ◽  
Chee Won Chung
Keyword(s):  
Tunnel Junction ◽  
Magnetic Tunnel Junction ◽  
Chemical Cleaning ◽  
Wet Chemical

Wet-chemical Cleaning of Epitaxial GaN(0001) Surfaces

2018 ◽  
Author(s):  
L. Peng ◽  
A. Ohta ◽  
N.X. Truyen ◽  
M. Ikeda ◽  
K. Makihara ◽  
...  
Keyword(s):  
Chemical Cleaning ◽  
Wet Chemical

Cleaning of Silicon Surfaces for Nanotechnology

2008 ◽  
Vol 573-574 ◽  
pp. 77-117 ◽  
Author(s):  
Oliver Senftleben ◽  
Hermann Baumgärtner ◽  
Ignaz Eisele
Keyword(s):  
Surface Roughness ◽  
High Mobility ◽  
Crystal Defects ◽  
Silicon Surfaces ◽  
Ex Situ ◽  
Chemical Cleaning ◽  
Gas Atmosphere ◽  
Wet Chemical ◽  
Device Properties

An overview of various cleaning procedures for silicon surfaces is presented. Because in-situ cleaning becomes more and more important for nanotechnology the paper concentrates on physical and dry chemical techniques. As standard ex-situ wet chemical cleaning has a significant impact on surface quality und thus device properties, its influence on further processes is also considered. Oxygen and carbon are unavoidable contaminations after wet chemical treatment and therefore we discuss their in-situ removal as one of the main goals of modern silicon substrate cleaning. As surface roughness strongly influences the electrical quality of interfaces for epitaxy and dielectric growth, we concentrate on techniques, which meet this requirement. It will be shown that multi-step thermal sequences in combination with simultaneous passivation of the clean surface are necessary in order to avoid recontamination. This can be achieved not only for ultra hich vacuum but also for inert gas atmosphere. In this case the process gases have to be extremely purified and the residual partial pressure of contaminats such as oxygen and carbon has to be negligible. It will be demonstrated that 800°C is an upper limit for thermal treatment of silicon surfaces in the presence of carbon because at this temperature SiC formation in combination with a high mobility of silicon monomers leads to surface roughness. In addition mechanical stress causes dislocations and crystal defects.

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