Electrical Switching and Bistability in Organic/Polymeric Thin Films and Memory Devices

2006 ◽  
Vol 16 (8) ◽  
pp. 1001-1014 ◽  
Author(s):  
Y. Yang ◽  
J. Ouyang ◽  
L. Ma ◽  
R. J.-H. Tseng ◽  
C.-W. Chu
Keyword(s):  
Thin Films ◽  
Memory Devices ◽  
Electrical Switching ◽  
Polymeric Thin Films

Polarized Fluorescence of Spin-coated Polymeric Thin Films

2007 ◽  
Vol 2 (2) ◽  
pp. 257-264
Author(s):  
Satoko Nishiyama ◽  
Masahiro Tajima ◽  
Yasuhiko Yoshida
Keyword(s):  
Thin Films ◽  
Polarized Fluorescence ◽  
Polymeric Thin Films

Carbon Monoxide Sensing Technologies

2021 ◽  
Keyword(s):  
Thin Films ◽  
Carbon Nanotubes ◽  
Carbon Monoxide ◽  
Metal Oxides ◽  
Electrochemical Sensors ◽  
Colorimetric Detection ◽  
Infrared Sensors ◽  
Polymeric Thin Films ◽  
Semiconducting Metal Oxides ◽  
Book Covers

The book covers the sensing and monitoring of poisonous carbon monoxide pollution in the environment. The sensors covered include semiconducting metal oxides, carbon nanotubes, conducting polymeric thin films, sensors based on colorimetric detection, non-dispersive infrared sensors, electrochemical sensors and photoacoustic detectors.

scholarly journals Memory Devices: Solution‐Processed Stretchable Ag 2 S Semiconductor Thin Films for Wearable Self‐Powered Nonvolatile Memory (Adv. Mater. 23/2021)

2021 ◽  
Vol 33 (23) ◽  
pp. 2170181
Author(s):  
Seungki Jo ◽  
Soyoung Cho ◽  
U Jeong Yang ◽  
Gyeong‐Seok Hwang ◽  
Seongheon Baek ◽  
...  
Keyword(s):  
Thin Films ◽  
Nonvolatile Memory ◽  
Memory Devices ◽  
Solution Processed ◽  
Semiconductor Thin Films ◽  
Self Powered

scholarly journals 7-Alkoxy-appended coumarin derivatives: synthesis, photo-physical properties, aggregation behaviours and current–voltage (I–V) characteristic studies on thin films

RSC Advances ◽  
2021 ◽  
Vol 11 (17) ◽  
pp. 10212-10223
Author(s):  
Abhijit Rudra Paul ◽  
Bapi Dey ◽  
Sudip Suklabaidya ◽  
Syed Arshad Hussain ◽  
Swapan Majumdar
Keyword(s):  
Thin Films ◽  
Carboxylic Acid ◽  
Physical Properties ◽  
Chemical Characteristics ◽  
Coumarin Derivatives ◽  
Design Synthesis ◽  
Electrical Switching ◽  
Physico Chemical ◽  
Current Voltage

In this article, we demonstrate the design, synthesis and physico-chemical characteristics, including electrical switching behaviours of long alkoxy-appended coumarin carboxylate/carboxylic acid in thin films.

Photochemical delineation of waveguides in polymeric thin films

1991 ◽  
Author(s):  
Karl W. Beeson ◽  
Keith A. Horn ◽  
Christina Lau ◽  
Michael J. McFarland ◽  
David R. Schwind ◽  
...  
Keyword(s):  
Thin Films ◽  
Polymeric Thin Films

Surface modification of polymeric thin films with vacuum ultraviolet light

2008 ◽  
Vol 40 (3-4) ◽  
pp. 400-403 ◽  
Author(s):  
E. Sarantopoulou ◽  
J. Kovač ◽  
Z. Kollia ◽  
I. Raptis ◽  
S. Kobe ◽  
...  
Keyword(s):  
Thin Films ◽  
Surface Modification ◽  
Ultraviolet Light ◽  
Vacuum Ultraviolet ◽  
Polymeric Thin Films

Ferroelectric C-Axis Oriented Pb5Ge3O11 Thin Films for One Transistor Memory Application

1998 ◽  
Vol 541 ◽  
Author(s):  
Tingkai Li ◽  
Fengyan Zhang ◽  
Sheng Teng Hsu
Keyword(s):  
Thin Films ◽  
Ferroelectric Properties ◽  
Hysteresis Loops ◽  
Chemical Vapor ◽  
Dielectric Constants ◽  
Memory Devices ◽  
Leakage Currents ◽  
Fatigue Characteristics ◽  
Ferroelectric Memory ◽  
Memory Applications

AbstractOne transistor memory devices have been proposed recently. To meet the needs of one transistor memory applications, C-axis oriented Pb5Ge3O11 (PGO) thin films were prepared using metalorganic chemical vapor deposition (MOCVD) and rapid thermal processing (RTP). It was found that the nucleation of C-axis Pb5Ge3O11 phase started at a deposition temperature below 400°C and grain growth dominated at 500°C or above. With increasing annealing temperature, the remanent polarization (Pr) and coercive field (Ec) values increased, and the hysteresis loops of the Pb5Ge3O11 films were well saturated and symmetrical after the post-annealing. The C-axis PGO thin film showed good ferroelectric properties at 5V: 2Pr and 2Ec values were 2.0 - 4.0 µC/cm2 and 90 - 110 kV/cm, respectively. The films also showed excellent fatigue characteristics: no fatigue was observed up to 1 × 109 switching cycles. The retention and imprint properties have also been studied. The leakage currents of the PGO films were 2 - 5 × 10−7 A/cm2 at 100 kV/cm and dielectric constants were 40 - 70. The high quality MOCVD Pb5Ge3O11 films can be used for single transistor ferroelectric memory devices.

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