Comparison of the Mobility-Carrier Density Relation in Polymer and Single-Crystal Organic Transistors Employing Vacuum and Liquid Gate Dielectrics

2009 ◽  
Vol 21 (21) ◽  
pp. 2174-2179 ◽  
Author(s):  
Yu Xia ◽  
Jeong Ho Cho ◽  
Jiyoul Lee ◽  
P. Paul Ruden ◽  
C. Daniel Frisbie
Keyword(s):  
Single Crystal ◽  
Carrier Density ◽  
Gate Dielectrics ◽  
Organic Transistors ◽  
Density Relation

High-Performance n- and p-Type Single-Crystal Organic Transistors with Free-Space Gate Dielectrics

2004 ◽  
Vol 16 (23-24) ◽  
pp. 2097-2101 ◽  
Author(s):  
E. Menard ◽  
V. Podzorov ◽  
S.-H. Hur ◽  
A. Gaur ◽  
M. E. Gershenson ◽  
...  
Keyword(s):  
Single Crystal ◽  
Free Space ◽  
High Performance ◽  
Gate Dielectrics ◽  
Organic Transistors ◽  
P Type

Ultralow-Noise Organic Transistors Based on Polymeric Gate Dielectrics with Self-Assembled Modifiers

2019 ◽  
Vol 11 (44) ◽  
pp. 41561-41569 ◽  
Author(s):  
Masaya Kondo ◽  
Takafumi Uemura ◽  
Fumitaka Ishiwari ◽  
Takashi Kajitani ◽  
Yoshiaki Shoji ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Organic Transistors ◽  
Self Assembled

Subthreshold regime in rubrene single-crystal organic transistors

2008 ◽  
Vol 95 (1) ◽  
pp. 193-201 ◽  
Author(s):  
Daniele Braga ◽  
Gilles Horowitz
Keyword(s):  
Single Crystal ◽  
Organic Transistors

Low Temperature Gate Dielectrics for Tft Applications

1985 ◽  
Vol 53 ◽  
Author(s):  
B L Jones ◽  
D B Meakin
Keyword(s):  
Low Temperature ◽  
Single Crystal ◽  
Gate Dielectrics ◽  
Stability Parameters ◽  
Yield Information ◽  
Mis Capacitor

ABSTRACTA series of low temperature CVD films of oxide (VAPOX and LTO) and nitride (PECVD ∝-SixNy:H) have been compared and optimised for use as gate dielectrics for TFT on insulator technology. The method of investigation involves the fabrication of MIS capacitor structures using the deposited insulator on single crystal n+ Si. I-V and C-V analyses yield information of the interested electronic stability parameters which are compared for the various insulators.

scholarly journals Probing stress effects in single crystal organic transistors by scanning Kelvin probe microscopy

2010 ◽  
Vol 96 (20) ◽  
pp. 203305 ◽  
Author(s):  
Lucile C. Teague ◽  
Oana D. Jurchescu ◽  
Curt A. Richter ◽  
Sankar Subramanian ◽  
John E. Anthony ◽  
...  
Keyword(s):  
Single Crystal ◽  
Organic Transistors ◽  
Kelvin Probe ◽  
Probe Microscopy ◽  
Kelvin Probe Microscopy ◽  
Stress Effects ◽  
Scanning Kelvin Probe

Enhanced hydrolytic and electrical stability of eco-friendly processed polyimide gate dielectrics for organic transistors

2020 ◽  
Vol 8 (41) ◽  
pp. 14370-14377
Author(s):  
Yuri Jeong ◽  
Hyunjin Park ◽  
Yujin So ◽  
Hyun Jung Mun ◽  
Tae Joo Shin ◽  
...  
Keyword(s):  
Gate Dielectrics ◽  
Hydrolytic Stability ◽  
Significant Enhancement ◽  
Organic Transistors ◽  
Electrical Stability ◽  
Aromatic Polyimides

Aromatic polyimides based on BPDA–pPDA incorporated with DMIZ exhibit a significant enhancement in hydrolytic stability and allow eco-friendly fabrication.

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