Dependence of Field-Effect Mobility on Deposition Conditions in a-Si:H TFT

1994 ◽  
Vol 336 ◽  
Author(s):  
Y. Chida ◽  
M. Kondo ◽  
G. Ganguly ◽  
A. Matsuda
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
High Mobility ◽  
High Electron ◽  
Field Effect Mobility ◽  
Si Substrate ◽  
High Electron Mobility ◽  
Deposition Conditions

ABSTRACTHigh electron Mobility (over 3 cm2/Vs) thin film transistors (TFTs) have been fabricated using a-Si:H on thermally oxidized crystalline Si substrate. The procedures for fabricating the high performance TFTs are presented and the possible reasons for the high mobility are discussed.

scholarly journals Effect of Annealing Ambient on SnO2 Thin Film Transistors Fabricated via An Ethanol-based Sol-gel Route

Electronics ◽  
2019 ◽  
Vol 8 (9) ◽  
pp. 955 ◽  
Author(s):  
Hyunjae Lee ◽  
Seunghyun Ha ◽  
Jin-Hyuk Bae ◽  
In-Man Kang ◽  
Kwangeun Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Structural Characteristics ◽  
Sol Gel ◽  
Critical Role ◽  
Sno2 Thin Film ◽  
Field Effect Mobility ◽  
Current Ratio

The effect of annealing ambient on SnO2 thin-film transistors (TFTs) fabricated via an ethanol-based sol-gel route was investigated. The annealing ambient has a significant effect on the structural characteristics and chemical composition and, in turn, the device performance. Although the crystalline-grain size of the SnO2 films annealed in air was the smallest, this size yielded the highest field-effect mobility. Compared with the minimization of boundary scattering via crystalline-size increase, augmentation of the free carrier concentration played a more critical role in the realization of high-performance devices. The fabricated SnO2 TFTs delivered a field-effect mobility, subthreshold swing, and on/off current ratio of 10.87 cm2/Vs, 0.87 V/decade, and 107, respectively.

High-Performance Submicrometer ZnON Thin-Film Transistors With Record Field-Effect Mobility

2016 ◽  
Vol 37 (3) ◽  
pp. 303-305 ◽  
Author(s):  
Chin-I Kuan ◽  
Horng-Chih Lin ◽  
Pei-Wen Li ◽  
Tiao-Yuan Huang
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Mobility

scholarly journals The Role of Dual-Stacked Oxide Semiconductor in High Performance Thin Film Transistors

2020 ◽  
Author(s):  
Youn Sang Kim ◽  
Changik Im ◽  
Nam-Kwang Cho ◽  
Jintaek Park ◽  
Eun Goo Lee ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Oxide Semiconductor ◽  
Oxide Thin Film ◽  
Band Offset ◽  
Indium Gallium Zinc Oxide ◽  
Field Effect Mobility ◽  
Display Resolution

Abstract Oxide thin film transistors (TFTs) have attracted much attention because they can be applied to flexible and large-scaled switching devices. Especially, Oxide semiconductors (OSs) have been developed as active layers of TFTs and, among them, Indium-Gallium-Zinc-Oxide (IGZO) is actively used in the OLED display field. However, IGZO TFTs are limited by low field-effect mobility, which critically affects display resolution and power consumption, despite superior off-state properties. Herein, we prevailed new working mechanisms in dual-stacked OS and, based on this, developed dual-stacked OS-based TFT with high field-effect mobility (~80 cm2/V·s), ideal threshold voltage near 0 V, high on-off current ratio (>109), and good stability at bias stress. In dual-stacked OS, induced areas are formed at interface by band-offset: band-offset-induced area (BOIA) and BOIA-induced area (BIA). They connect gate-bias-induced area (GBIA) and electrode-bias-induced area (EBIA), resulting in high current flow. Such mechanism will provide new design rules for high performance OS-based TFTs.

Thiophene-S,S-dioxidized indophenines as high performance n-type organic semiconductors for thin film transistors

RSC Advances ◽  
2016 ◽  
Vol 6 (51) ◽  
pp. 45410-45418 ◽  
Author(s):  
Yunfeng Deng ◽  
Bin Sun ◽  
Jesse Quinn ◽  
Yinghui He ◽  
Jackson Ellard ◽  
...  
Keyword(s):  
Thin Film ◽  
Organic Semiconductors ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
High Performance ◽  
Energy Levels ◽  
High Electron ◽  
High Electron Mobility ◽  
Type Semiconductor

Three thiophene-S,S-dioxidized indophenines with deep frontier energy levels are synthesized from isatins and thiophene, which exhibit n-type semiconductor performance with high electron mobility of up to 0.11 cm2 V−1 s−1 in thin film transistors.

Sublimation-doping with super bases for high-performance solution-processed heterojunction oxide thin film transistors

2021 ◽  
Author(s):  
Juhyeok Lee ◽  
Mingyu Jae ◽  
Syed Zahid Hassan ◽  
Dae Sung Chung
Keyword(s):  
Thin Film ◽  
Electron Mobility ◽  
Thin Film Transistors ◽  
High Performance ◽  
Oxide Thin Film ◽  
High Electron ◽  
Solution Processed ◽  
High Electron Mobility ◽  
Bias Stress ◽  
High Level

Various amidine base with different pKa values are deposited via sublimation, resulting in not only an exceptionally high electron mobility of 37.8 cm2 V−1 s−1 on average (46.6 cm2 V−1 s−1 maximum) but also a high level of bias-stress stability.

High Performance Polymer Thin Film Transistors Array Printed on a Flexible Polycarbonate Substrate

2002 ◽  
Vol 736 ◽  
Author(s):  
Sung Kyu Park ◽  
Jeong In Han ◽  
Dae Gyu Moon ◽  
Won Keun Kim ◽  
Yong Hoon Kim
Keyword(s):  
Thin Film ◽  
Plasma Treatment ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Mobility ◽  
Semiconductor Interface ◽  
Contact Printing ◽  
Saturation Field ◽  
Polycarbonate Substrate

ABSTRACTHigh performance poly (3-hexylthiophene) (P3HT) thin film transistors (TFTs) array was fabricated on a polycarbonate substrate by micro-contact printing method. A thin polyimide layer (40 nm) was applied before silicon oxide deposition to improve the electrical properties of the TFT device. Also, the effects of O2 plasma treatment on the field effect mobility and output current behaviors of the devices were investigated. By plasma treatment, the surface roughness of gate dielectric was improved which accounts for the increased field effect mobility and the hole Schottky barrier height in electrode/semiconductor interface was lowered resulting in large drain current in the device. Based on the experiments, we fabricated P3HT TFTs array with 0.025 cm2/V·s in saturation field effect mobility and on/off current ratio of 103 ∼ 104 on a polycarbonate substrate.

Amorphous Silicon Thin Film Transistors With High Electron Field Effect Mobility

1992 ◽  
Vol 258 ◽  
Author(s):  
J.L. Andújar ◽  
E. Bertrán ◽  
A. Canillas ◽  
J. Campmany ◽  
J. Cifre
Keyword(s):  
Thin Film ◽  
Amorphous Silicon ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Rf Plasma ◽  
High Electron ◽  
Field Effect Mobility ◽  
Silicon Thin Film ◽  
Insulator Layer ◽  
Electron Field

ABSTRACTNormal staggered hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFT) were prepared by rf plasma deposition through a three-step process. The TFTs were constituted by an a-SiN/a-Si:H structure grown on NiCr source-drain electrodes evaporated on glass substrates. The intrinsic a-Si:H active layer (Fermi level at EC-EF = 0.7 eV) was deposited from pure SiH4 rf plasma, and the insulator layer of a-SiN was grown using a high rf power plasma (200 mW/cm2) of SiH4-N2 mixture with a SiH4 fraction of 0.5 %. Ellipsometric measurements showed that a very transparent a-SiN film was grown with an abrupt interface insulator/a-Si:H. TFTs with 0.2 μm thick a-Si:H layer and 10 μm channel length have on-off current ratios of 5 104, electron field effect mobility of 1.5 cm2/V-s (dielectric constant εri ≈ 7.9), and threshold voltage around 5 V. The results are discussed in terms of low hydrogen content and low porosity of these a-SiN films prepared from silane-nitrogen.

scholarly journals Floating Ni Capping for High-Mobility p-Channel SnO Thin-Film Transistors

Materials ◽  
2020 ◽  
Vol 13 (14) ◽  
pp. 3055 ◽  
Author(s):  
Min-Gyu Shin ◽  
Kang-Hwan Bae ◽  
Hyun-Seok Cha ◽  
Hwan-Seok Jeong ◽  
Dae-Hwan Kim ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
Electric Field Distribution ◽  
Hole Concentration ◽  
High Mobility ◽  
Field Effect Mobility ◽  
Capping Layer ◽  
Vertical Electric Field ◽  
Enhanced Mobility

We utilized Ni as a floating capping layer in p-channel SnO thin-film transistors (TFTs) to improve their electrical performances. By utilizing the Ni as a floating capping layer, the p-channel SnO TFT showed enhanced mobility as high as 10.5 cm2·V−1·s−1. The increase in mobility was more significant as the length of Ni capping layer increased and the thickness of SnO active layer decreased. The observed phenomenon was possibly attributed to the changed vertical electric field distribution and increased hole concentration in the SnO channel by the floating Ni capping layer. Our experimental results demonstrate that incorporating the floating Ni capping layer on the channel layer is an effective method for increasing the field-effect mobility in p-channel SnO TFTs.

High‐Performance Coplanar Dual‐Channel a‐InGaZnO/a‐InZnO Semiconductor Thin‐Film Transistors with High Field‐Effect Mobility

2021 ◽  
pp. 2000896
Author(s):  
Mohammad Masum Billah ◽  
Abu Bakar Siddik ◽  
Jung Bae Kim ◽  
Dong Kil Yim ◽  
Soo Young Choi ◽  
...  
Keyword(s):  
Thin Film ◽  
Thin Film Transistors ◽  
Field Effect ◽  
High Field ◽  
High Performance ◽  
Field Effect Mobility ◽  
Dual Channel ◽  
Semiconductor Thin Film
Sign in / Sign up

Export Citation Format

Share Document