scholarly journals Memory Devices: Direct Observations of Nanofilament Evolution in Switching Processes in HfO2 -Based Resistive Random Access Memory by In Situ TEM Studies (Adv. Mater. 10/2017)

2017 ◽  
Vol 29 (10) ◽  
Author(s):  
Chao Li ◽  
Bin Gao ◽  
Yuan Yao ◽  
Xiangxiang Guan ◽  
Xi Shen ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
In Situ Tem ◽  
Memory Devices ◽  
Access Memory ◽  
Direct Observations

Direct Observations of Nanofilament Evolution in Switching Processes in HfO2-Based Resistive Random Access Memory by In Situ TEM Studies

2017 ◽  
Vol 29 (10) ◽  
pp. 1602976 ◽  
Author(s):  
Chao Li ◽  
Bin Gao ◽  
Yuan Yao ◽  
Xiangxiang Guan ◽  
Xi Shen ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
In Situ Tem ◽  
Access Memory ◽  
Direct Observations

scholarly journals Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Masashi Arita ◽  
Akihito Takahashi ◽  
Yuuki Ohno ◽  
Akitoshi Nakane ◽  
Atsushi Tsurumaki-Fukuchi ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
In Situ Tem ◽  
Access Memory ◽  
Switching Operation

scholarly journals Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

2015 ◽  
Vol 7 (6) ◽  
pp. e194-e194 ◽  
Author(s):  
Kyungjoon Baek ◽  
Kyung Song ◽  
Sung Kyu Son ◽  
Jang Won Oh ◽  
Seung-Joon Jeon ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
In Situ Tem ◽  
Memory Devices ◽  
Access Memory ◽  
Set Switching

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

The effects of substrate temperature on ZnO-based resistive random access memory devices

2012 ◽  
Vol 21 (6) ◽  
pp. 065201 ◽  
Author(s):  
Jian-Wei Zhao ◽  
Feng-Juan Liu ◽  
Hai-Qin Huang ◽  
Zuo-Fu Hu ◽  
Xi-Qing Zhang
Keyword(s):  
Substrate Temperature ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory

scholarly journals Resistive Switching: Forming‐Free Grain Boundary Engineered Hafnium Oxide Resistive Random Access Memory Devices (Adv. Electron. Mater. 10/2019)

2019 ◽  
Vol 5 (10) ◽  
pp. 1970054
Author(s):  
Stefan Petzold ◽  
Alexander Zintler ◽  
Robert Eilhardt ◽  
Eszter Piros ◽  
Nico Kaiser ◽  
...  
Keyword(s):  
Grain Boundary ◽  
Resistive Switching ◽  
Hafnium Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory
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