Direct Observations of Nanofilament Evolution in Switching Processes in HfO2-Based Resistive Random Access Memory by In Situ TEM Studies

2017 ◽  
Vol 29 (10) ◽  
pp. 1602976 ◽  
Author(s):  
Chao Li ◽  
Bin Gao ◽  
Yuan Yao ◽  
Xiangxiang Guan ◽  
Xi Shen ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
In Situ Tem ◽  
Access Memory ◽  
Direct Observations

scholarly journals Switching operation and degradation of resistive random access memory composed of tungsten oxide and copper investigated using in-situ TEM

2015 ◽  
Vol 5 (1) ◽  
Author(s):  
Masashi Arita ◽  
Akihito Takahashi ◽  
Yuuki Ohno ◽  
Akitoshi Nakane ◽  
Atsushi Tsurumaki-Fukuchi ◽  
...  
Keyword(s):  
Tungsten Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
In Situ Tem ◽  
Access Memory ◽  
Switching Operation

Scanning transmission X-ray microscopy probe forin situmechanism study of graphene-oxide-based resistive random access memory

2013 ◽  
Vol 21 (1) ◽  
pp. 170-176 ◽  
Author(s):  
Hyun Woo Nho ◽  
Jong Yun Kim ◽  
Jian Wang ◽  
Hyun-Joon Shin ◽  
Sung-Yool Choi ◽  
...  
Keyword(s):  
Graphene Oxide ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Ex Situ ◽  
Access Memory ◽  
Bipolar Resistive Switching ◽  
X Ray ◽  
Scanning Transmission

Here, anin situprobe for scanning transmission X-ray microscopy (STXM) has been developed and applied to the study of the bipolar resistive switching (BRS) mechanism in an Al/graphene oxide (GO)/Al resistive random access memory (RRAM) device. To performin situSTXM studies at the CK- and OK-edges, both the RRAM junctions and theI0junction were fabricated on a single Si3N4membrane to obtain local XANES spectra at these absorption edges with more delicateI0normalization. Using this probe combined with the synchrotron-based STXM technique, it was possible to observe unique chemical changes involved in the BRS process of the Al/GO/Al RRAM device. Reversible oxidation and reduction of GO induced by the externally applied bias voltages were observed at the OK-edge XANES feature located at 538.2 eV, which strongly supported the oxygen ion drift model that was recently proposed fromex situtransmission electron microscope studies.

scholarly journals Microstructure-dependent DC set switching behaviors of Ge–Sb–Te-based phase-change random access memory devices accessed by in situ TEM

2015 ◽  
Vol 7 (6) ◽  
pp. e194-e194 ◽  
Author(s):  
Kyungjoon Baek ◽  
Kyung Song ◽  
Sung Kyu Son ◽  
Jang Won Oh ◽  
Seung-Joon Jeon ◽  
...  
Keyword(s):  
Phase Change ◽  
Random Access ◽  
Random Access Memory ◽  
In Situ Tem ◽  
Memory Devices ◽  
Access Memory ◽  
Set Switching

Effect of Conductive Filament Temperature on ZrO2 based Resistive Random Access Memory Devices

2020 ◽  
Vol 12 (2) ◽  
pp. 02008-1-02008-4
Author(s):  
Pramod J. Patil ◽  
◽  
Namita A. Ahir ◽  
Suhas Yadav ◽  
Chetan C. Revadekar ◽  
...  
Keyword(s):  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Memory Devices ◽  
Access Memory ◽  
Conductive Filament ◽  
Filament Temperature

scholarly journals Improved Device Distribution in High-Performance SiNx Resistive Random Access Memory via Arsenic Ion Implantation

Nanomaterials ◽  
2021 ◽  
Vol 11 (6) ◽  
pp. 1401
Author(s):  
Te Jui Yen ◽  
Albert Chin ◽  
Vladimir Gritsenko
Keyword(s):  
High Performance ◽  
Conduction Mechanism ◽  
Random Access ◽  
Random Access Memory ◽  
Resistive Random Access Memory ◽  
Switching Behavior ◽  
Access Memory ◽  
Current Voltage ◽  
Current Voltage Characteristics ◽  
Limited Conduction

Large device variation is a fundamental challenge for resistive random access memory (RRAM) array circuit. Improved device-to-device distributions of set and reset voltages in a SiNx RRAM device is realized via arsenic ion (As+) implantation. Besides, the As+-implanted SiNx RRAM device exhibits much tighter cycle-to-cycle distribution than the nonimplanted device. The As+-implanted SiNx device further exhibits excellent performance, which shows high stability and a large 1.73 × 103 resistance window at 85 °C retention for 104 s, and a large 103 resistance window after 105 cycles of the pulsed endurance test. The current–voltage characteristics of high- and low-resistance states were both analyzed as space-charge-limited conduction mechanism. From the simulated defect distribution in the SiNx layer, a microscopic model was established, and the formation and rupture of defect-conductive paths were proposed for the resistance switching behavior. Therefore, the reason for such high device performance can be attributed to the sufficient defects created by As+ implantation that leads to low forming and operation power.

Sign in / Sign up

Export Citation Format

Share Document