Self‐Assembled Carbon Superstructures Achieving Ultra‐Stable and Fast Proton‐Coupled Charge Storage Kinetics

2021 ◽  
pp. 2104148
Author(s):  
Ziyang Song ◽  
Ling Miao ◽  
Laurent Ruhlmann ◽  
Yaokang Lv ◽  
Dazhang Zhu ◽  
...  
Keyword(s):  
Charge Storage ◽  
Fast Proton ◽  
Self Assembled

Electrical detection of optically induced charge storage in self-assembled InAs quantum dots

1998 ◽  
Vol 73 (18) ◽  
pp. 2618-2620 ◽  
Author(s):  
J. J. Finley ◽  
M. Skalitz ◽  
M. Arzberger ◽  
A. Zrenner ◽  
G. Böhm ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Charge Storage ◽  
Electrical Detection ◽  
Inas Quantum Dots ◽  
Induced Charge ◽  
Self Assembled ◽  
Optically Induced

Molecular Memory Based on Nanowire–Molecular Wire Heterostructures

2007 ◽  
Vol 7 (1) ◽  
pp. 138-150 ◽  
Author(s):  
Chao Li ◽  
Bo Lei ◽  
Wendy Fan ◽  
Daihua Zhang ◽  
M. Meyyappan ◽  
...  
Keyword(s):  
Building Blocks ◽  
Molecular Wires ◽  
Charge Storage ◽  
Memory Devices ◽  
Molecular Wire ◽  
Molecular Memory ◽  
Nanoscale Device ◽  
Self Assembled ◽  
Novel Concept ◽  
Beyond Cmos

This article reviews the recent research of molecular memory based on self-assembled nanowire–molecular wire heterostructures. These devices exploit a novel concept of using redox-active molecules as charge storage flash nodes for nanowire transistors, and thus boast many advantages such as room-temperature processing and nanoscale device area. Various key elements of this technology will be reviewed, including the synthesis of the nanowires and molecular wires, and fabrication and characterization of the molecular memory devices. In particular, multilevel memory has been demonstrated using In2O3 nanowires with self-assembled Fe-bis(terpyridine) molecules, which serve to multiple the charge storage density without increasing the device size. Furthermore, in-depth studies on memory devices made with different molecules or with different functionalization techniques will be reviewed and analyzed. These devices represent a conceptual breakthrough in molecular memory and may work as building blocks for future beyond-CMOS nanoelectronic circuits.

Optically Induced Persistent Charge Storage Effects in Self Assembled InAs Quantum Dots

1999 ◽  
Vol 38 (Part 1, No. 1B) ◽  
pp. 531-534 ◽  
Author(s):  
Jonathan J. Finley ◽  
Matthias Skalitz ◽  
Markus Arzberger ◽  
Artur Zrenner ◽  
Gerhard Böhm ◽  
...  
Keyword(s):  
Quantum Dots ◽  
Charge Storage ◽  
Inas Quantum Dots ◽  
Storage Effects ◽  
Self Assembled ◽  
Optically Induced

Charge storage investigation in self-assembled monolayer of redox-active recombinant azurin

2009 ◽  
Vol 9 (2) ◽  
pp. e71-e75 ◽  
Author(s):  
Sang-Uk Kim ◽  
Ajay Kumar Yagati ◽  
Ravindra P. Singh ◽  
Junhong Min ◽  
Jeong-Woo Choi
Keyword(s):  
Charge Storage ◽  
Self Assembled Monolayer ◽  
Redox Active ◽  
Self Assembled

Nonvolatile memories using the electrets of conjugated rod-coil block copolymer and its nanocomposite with single wall carbon nanotubes

2015 ◽  
Vol 3 (3) ◽  
pp. 551-558 ◽  
Author(s):  
Yu-Cheng Chiu ◽  
Chien-Chung Shih ◽  
Wen-Chang Chen
Keyword(s):  
Carbon Nanotubes ◽  
Block Copolymer ◽  
High Performance ◽  
Single Wall Carbon Nanotubes ◽  
Charge Storage ◽  
Memory Devices ◽  
Single Wall Carbon ◽  
Nonvolatile Memories ◽  
Self Assembled

Self-assembled conjugated rod-coil block copolymer and its nanocomposites with SWCNT could be used as the charge storage layer for high-performance OFET memory devices.

Characterization of Charge Storage in Redox-Active Self-Assembled Monolayers

Langmuir ◽  
2002 ◽  
Vol 18 (10) ◽  
pp. 4030-4040 ◽  
Author(s):  
Kristian M. Roth ◽  
Jonathan S. Lindsey ◽  
David F. Bocian ◽  
Werner G. Kuhr
Keyword(s):  
Self Assembled Monolayers ◽  
Charge Storage ◽  
Redox Active ◽  
Assembled Monolayers ◽  
Self Assembled
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