scholarly journals Organic Semiconductors: Surface Energy-Mediated Self-Patterning for High Performance Spray-Deposited Organic Field Effect Transistors (Adv. Mater. Interfaces 11/2016)

2016 ◽  
Vol 3 (11) ◽  
Author(s):  
Han-Wen Hsu ◽  
Wei-Chieh Chang ◽  
Shih-Huang Tung ◽  
Cheng-Liang Liu
Keyword(s):  
Surface Energy ◽  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

scholarly journals 2,2'-(Arylenedivinylene)bis-8-hydroxyquinolines exhibiting aromatic π-π stacking interactions as solution-processable p-type organic semiconductors for high-performance organic field effect transistors

2021 ◽  
Author(s):  
Suman Yadav ◽  
Shivani Sharma ◽  
Satinder K Sharma ◽  
Chullikkattil P. Pradeep
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistor ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors ◽  
Organic Thin Film ◽  
Effect Transistor ◽  
Solution Processable ◽  
P Type

Solution-processable organic semiconductors capable of functioning at low operating voltages (~5 V) are in demand for organic field-effect transistor (OFET) applications. Exploration of new classes of compounds as organic thin-film...

scholarly journals Correction: Naphthalene flanked diketopyrrolopyrrole based organic semiconductors for high performance organic field effect transistors

2018 ◽  
Vol 42 (19) ◽  
pp. 16384-16384
Author(s):  
Qian Liu ◽  
Huabin Sun ◽  
Chula Blaikie ◽  
Chiara Caporale ◽  
Sergei Manzhos ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

Correction for ‘Naphthalene flanked diketopyrrolopyrrole based organic semiconductors for high performance organic field effect transistors’ by Qian Liu et al., New J. Chem., 2018, 42, 12374–12385.

Naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene-based semiconductors for organic field-effect transistors

2015 ◽  
Vol 3 (31) ◽  
pp. 8024-8029 ◽  
Author(s):  
Zhaoguang Li ◽  
Ji Zhang ◽  
Kai Zhang ◽  
Weifeng Zhang ◽  
Lei Guo ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Hole Mobility ◽  
Building Blocks ◽  
Organic Field Effect Transistors ◽  
Next Generation

Naphtho[2,1-b:3,4-b′]bisthieno[3,2-b][1]benzothiophene derivatives exhibiting a hole mobility of up to 0.25 cm2 V−1 s−1 show promise as useful building blocks to construct next-generation high performance organic semiconductors.

Surface Energy-Mediated Self-Patterning for High Performance Spray-Deposited Organic Field Effect Transistors

2016 ◽  
Vol 3 (11) ◽  
pp. 1500714 ◽  
Author(s):  
Han-Wen Hsu ◽  
Wei-Chieh Chang ◽  
Shih-Huang Tung ◽  
Cheng-Liang Liu
Keyword(s):  
Surface Energy ◽  
Field Effect ◽  
High Performance ◽  
Field Effect Transistors ◽  
Organic Field Effect Transistors

scholarly journals Exploring the Critical Thickness of Organic Semiconductor Layer for Enhanced Piezoresistive Sensitivity in Field-Effect Transistor Sensors

Materials ◽  
2020 ◽  
Vol 13 (7) ◽  
pp. 1583 ◽  
Author(s):  
Damien Thuau ◽  
Katherine Begley ◽  
Rishat Dilmurat ◽  
Abduleziz Ablat ◽  
Guillaume Wantz ◽  
...  
Keyword(s):  
Organic Semiconductors ◽  
Organic Semiconductor ◽  
Field Effect ◽  
High Performance ◽  
Critical Thickness ◽  
Field Effect Transistors ◽  
Mechanical Strain ◽  
Semiconductor Layer ◽  
Organic Field Effect Transistors ◽  
P Type

Organic semiconductors (OSCs) are promising transducer materials when applied in organic field-effect transistors (OFETs) taking advantage of their electrical properties which highly depend on the morphology of the semiconducting film. In this work, the effects of OSC thickness (ranging from 5 to 15 nm) on the piezoresistive sensitivity of a high-performance p-type organic semiconductor, namely dinaphtho [2,3-b:2,3-f] thieno [3,2–b] thiophene (DNTT), were investigated. Critical thickness of 6 nm thin film DNTT, thickness corresponding to the appearance of charge carrier percolation paths in the material, was demonstrated to be highly sensitive to mechanical strain. Gauge factors (GFs) of 42 ± 5 and −31 ± 6 were measured from the variation of output currents of 6 nm thick DNTT-based OFETs engineered on top of polymer cantilevers in response to compressive and tensile strain, respectively. The relationship between the morphologies of the different thin films and their corresponding piezoresistive sensitivities was discussed.

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