scholarly journals Optical Storage: Phase-Change Nanodot Material for an Optical Memory (Advanced Optical Materials 11/2013)

2013 ◽  
Vol 1 (11) ◽  
pp. 819-819 ◽  
Author(s):  
Noboru Yamada ◽  
Rie Kojima ◽  
Kazuya Hisada ◽  
Takashi Mihara ◽  
Akio Tsuchino ◽  
...  
Keyword(s):  
Phase Change ◽  
Optical Materials ◽  
Optical Memory ◽  
Optical Storage

scholarly journals Reconfigurable Flat Optics with Programmable Reflection Amplitude Using Lithography‐Free Phase‐Change Material Ultra‐Thin Films (Advanced Optical Materials 2/2021)

2021 ◽  
Vol 9 (2) ◽  
pp. 2170006
Author(s):  
Sébastien Cueff ◽  
Arnaud Taute ◽  
Antoine Bourgade ◽  
Julien Lumeau ◽  
Stephane Monfray ◽  
...  
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Phase Change Material ◽  
Optical Materials ◽  
Reflection Amplitude ◽  
Change Material

Evolution Of Crystalline Microstructure in GeTe Thin Films for Optical Storage Applications

1994 ◽  
Vol 343 ◽  
Author(s):  
M. Libera
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Optical Storage ◽  
Microstructural Development ◽  
Multilayered Media ◽  
Time Resolved ◽  
Constant Rate ◽  
Individual Contributions ◽  
The Individual ◽  
Transmission Studies

ABSTRACTThe bit-erase process in phase-change optical storage is based on the amorphous to crystalline transformation. While there has been significant progress developing compositions and multilayered media for phase-change applications, quantitative studies of the crystallization kinetics and microstructural development are generally lacking. This paper describes work quantifying crystallization in GeTe thin films. Microstructural changes during isothermal annealing are measured using in-situ hot-stage optical microscopy. This technique measures the fraction crystallized, the number of crystallites, and crystallite radii as a function of time. These data are sufficient to deconvolute the individual contributions of nucleation and growth. We find an Avrami exponent of ∼4, consistent with time-resolved reflection/transmission studies. This exponent is due to 2-D growth at a constant rate plus transient nucleation. The data are used in a kinetic model to simulate non-isothermal crystallization during focused-laser heating characteristic of the bit-erase process.

Preparation and short-wavelength optical storage properties of Ge-Te alloy phase change thin film

1998 ◽  
Author(s):  
Huiyong Liu ◽  
Fusong S. Jiang ◽  
Liqiu Q. Men ◽  
Zhengxiu Fan ◽  
Fuxi Gan
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Short Wavelength ◽  
Optical Storage ◽  
Storage Properties

Improving the reflectance and color contrasts of phase-change materials by vacancy reduction for optical-storage and display applications

2019 ◽  
Vol 45 (1) ◽  
pp. 244
Author(s):  
Jianbo Wang ◽  
Qian Li ◽  
Shuaipeng Tao ◽  
Zhoubo Xia ◽  
Yuankai Li ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Optical Storage

scholarly journals Fiber‐Integrated Phase Change Metasurfaces with Switchable Group Delay Dispersion (Advanced Optical Materials 21/2021)

2021 ◽  
Vol 9 (21) ◽  
pp. 2170085
Author(s):  
Tiago Martins ◽  
Yihao Cui ◽  
Behrad Gholipour ◽  
Jun‐Yu Ou ◽  
Orlando Frazão ◽  
...  
Keyword(s):  
Phase Change ◽  
Optical Materials ◽  
Group Delay ◽  
Group Delay Dispersion

AZO Polymers for Reversible Optical Storage

1992 ◽  
Vol 277 ◽  
Author(s):  
A. Natansohn ◽  
P. Rochon ◽  
J. Gosselin ◽  
S. Xie
Keyword(s):  
Second Harmonic ◽  
Optical Memory ◽  
Argon Laser ◽  
Optical Storage ◽  
Holographic Storage ◽  
Azo Polymers ◽  
Circularly Polarized ◽  
Writing Beam ◽  
Potential Applications ◽  
Azobenzene Groups

ABSTRACTAmorphous high-Tg polymers films containing electron-donor-electronacceptor substituted azobenzene groups can be used as reversible optical storage materials. Optical information can be “written” on the film with a polarized argon laser beam and “read” with a low power HeNe laser. Erasing can be performed with a circularly polarized writing beam. A significant number of writing/erasing cycles can be performed on the same spot. Potential applications in optical memory, holographic storage, waveguides and second harmonic generation are discussed.

Phase-Change Media for High-Density Optical Recording

2001 ◽  
Vol 674 ◽  
Author(s):  
Herman Borg ◽  
Martijn Lankhorst ◽  
Erwin Meinders ◽  
Wouter Leibbrandt
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Laser Heating ◽  
Phase Change Materials ◽  
Optical Storage ◽  
Sputter Deposition ◽  
Optical Recording ◽  
Thermal Design ◽  
Recording Media ◽  
Audio Video

ABSTRACTRewritable optical-storage systems are quickly gaining market share in audio, video and data- storage applications. The development of new rewritable optical-storage formats with higher capacity and data rate critically depends on innovations made to the recording media incorporating so-called phase-change materials. These materials allow reversible switching between a low and high reflective state induced by laser heating. In this paper, we highlight phase-change media aspects as optical and thermal design, sputter-deposition, materials optimization, and the development of new recording strategies. Focus is on the speed race in optical recording.

Laser-Induced Phase Transformation of Sb-Te Alloy Films for Optical Storage

1988 ◽  
Vol 100 ◽  
Author(s):  
Susumu Fujimori ◽  
Shogo Yagi ◽  
Hiroki Yamazaki ◽  
Nobuhiro Funakoshi
Keyword(s):  
Phase Transformation ◽  
Phase Change ◽  
Phase Transformations ◽  
Crystalline Phase ◽  
Optical Storage ◽  
Optical Recording ◽  
Alloy Films

ABSTRACTSb-Te alloy films are developed as rewritable optical recording materials based on amorphous-crystalline phase transformations. Sb2 Te3 is shown to be the best practical phase change medium.

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