Preparation and short-wavelength optical storage properties of Ge-Te alloy phase change thin film

1998 ◽  
Author(s):  
Huiyong Liu ◽  
Fusong S. Jiang ◽  
Liqiu Q. Men ◽  
Zhengxiu Fan ◽  
Fuxi Gan
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Short Wavelength ◽  
Optical Storage ◽  
Storage Properties

Short-wavelength optical storage properties of GeSb2Te4 phase-change thin films

1996 ◽  
Author(s):  
Liqiu Q. Men ◽  
Fusong S. Jiang ◽  
Chao Liu ◽  
Huiyong Liu ◽  
Fuxi Gan
Keyword(s):  
Thin Films ◽  
Phase Change ◽  
Short Wavelength ◽  
Optical Storage ◽  
Storage Properties

Green-Light Static Rewritable Optical Storage Properties of a Novel CuTCNQ Derivative Thin Film

2003 ◽  
Vol 20 (12) ◽  
pp. 2178-2181 ◽  
Author(s):  
Huang Wu-Qiao ◽  
Wu Yi-Qun ◽  
Gu Dong-Hong ◽  
Gan Fu-Xi
Keyword(s):  
Thin Film ◽  
Green Light ◽  
Optical Storage ◽  
Storage Properties

Observation of short-wavelength recorded pits in GeSb2Te4 phase change thin film by atomic force microscopy

1997 ◽  
Vol 120 (1-2) ◽  
pp. 171-179 ◽  
Author(s):  
Liqiu Men ◽  
Fuxi Gan ◽  
Jielin Sun ◽  
Minqian Li
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Phase Change ◽  
Short Wavelength ◽  
Force Microscopy ◽  
Atomic Force

Microstructural observation of short-wavelength recorded spots of phase-change thin film by atomic force microscopy

1998 ◽  
Author(s):  
Liqiu Q. Men ◽  
Huiyong Liu ◽  
Fusong S. Jiang ◽  
Fuxi Gan ◽  
Jielin Sun ◽  
...  
Keyword(s):  
Thin Film ◽  
Atomic Force Microscopy ◽  
Phase Change ◽  
Short Wavelength ◽  
Microstructural Observation ◽  
Force Microscopy ◽  
Atomic Force

Thin film alloy mixtures for high speed phase change optical storage: A study on (Ge1Sb2Te4)1−x(Sn1Bi2Te4)x

2002 ◽  
Vol 80 (18) ◽  
pp. 3313-3315 ◽  
Author(s):  
Tae-Yon Lee ◽  
Ki-Bum Kim ◽  
Byung-ki Cheong ◽  
Taek Sung Lee ◽  
Sung Jin Park ◽  
...  
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
High Speed ◽  
Optical Storage ◽  
Film Alloy

Silicon versus the rest

2014 ◽  
Vol 92 (7/8) ◽  
pp. 553-560 ◽  
Author(s):  
John Robertson
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Amorphous Silicon ◽  
Material Properties ◽  
Thin Film Transistors ◽  
Phase Change Materials ◽  
Optical Storage ◽  
Large Area ◽  
Oxide Semiconductors ◽  
Storage Technology

We review the material properties that allowed amorphous silicon to become the dominant large area semiconductor and then point out how amorphous oxide semiconductors could displace a-Si in thin film transistors, and how phase change materials, such as GeSbTe alloys, have provided an optical storage technology and will provide a nonvolatile electrical storage technology based on their unique properties.

The effect of an aluminum heat-sink layer on the laser-induced amorphization of SiOx/TeGeSn/SiOx phase-change recording films

1989 ◽  
Vol 47 ◽  
pp. 574-575
Author(s):  
Matthew R. Libera ◽  
Martin Chen
Keyword(s):  
Thin Film ◽  
Phase Change ◽  
Heat Sink ◽  
Multilayer Film ◽  
Glassy Phase ◽  
Film Structure ◽  
Glass Forming ◽  
Active Storage ◽  
Dielectric Layers ◽  
Amorphous States

Phase-change erasable optical storage is based on the ability to switch a micron-sized region of a thin film between the crystalline and amorphous states using a diffraction-limited laser as a heat source. A bit of information can be represented as an amorphous spot on a crystalline background, and the two states can be optically identified by their different reflectivities. In a typical multilayer thin-film structure the active (storage) layer is sandwiched between one or more dielectric layers. The dielectric layers provide physical containment and act as a heat sink. A viable phase-change medium must be able to quench to the glassy phase after melting, and this requires proper tailoring of the thermal properties of the multilayer film. The present research studies one particular multilayer structure and shows the effect of an additional aluminum layer on the glass-forming ability.

Electron Microscopy Study on Amorphous Ge-Sb-Te Thin Film for Phase Change Optical Recording

2003 ◽  
Vol 42 (Part 2, No. 10A) ◽  
pp. L1158-L1160 ◽  
Author(s):  
Muneyuki Naito ◽  
Manabu Ishimaru ◽  
Yoshihiko Hirotsu ◽  
Masaki Takashima
Keyword(s):  
Thin Film ◽  
Electron Microscopy ◽  
Phase Change ◽  
Microscopy Study ◽  
Electron Microscopy Study ◽  
Optical Recording
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