Phase-Change Media for High-Density Optical Recording

2001 ◽  
Vol 674 ◽  
Author(s):  
Herman Borg ◽  
Martijn Lankhorst ◽  
Erwin Meinders ◽  
Wouter Leibbrandt
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Laser Heating ◽  
Phase Change Materials ◽  
Optical Storage ◽  
Sputter Deposition ◽  
Optical Recording ◽  
Thermal Design ◽  
Recording Media ◽  
Audio Video

ABSTRACTRewritable optical-storage systems are quickly gaining market share in audio, video and data- storage applications. The development of new rewritable optical-storage formats with higher capacity and data rate critically depends on innovations made to the recording media incorporating so-called phase-change materials. These materials allow reversible switching between a low and high reflective state induced by laser heating. In this paper, we highlight phase-change media aspects as optical and thermal design, sputter-deposition, materials optimization, and the development of new recording strategies. Focus is on the speed race in optical recording.

scholarly journals Reversible displacive transformation in MnTe polymorphic semiconductor

2020 ◽  
Vol 11 (1) ◽  
Author(s):  
Shunsuke Mori ◽  
Shogo Hatayama ◽  
Yi Shuang ◽  
Daisuke Ando ◽  
Yuji Sutou
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Laser Heating ◽  
Lower Energy ◽  
Nonvolatile Memory ◽  
Phase Change Materials ◽  
Atomic Plane ◽  
Low Power Consumption ◽  
Semiconductor Film ◽  
Displacive Transformation

AbstractDisplacive transformation is a diffusionless transition through shearing and shuffling of atoms. Diffusionless displacive transition with modifications in physical properties can help manufacture fast semiconducting devices for applications such as data storage and switching. MnTe is known as a polymorphic compound. Here we show that a MnTe semiconductor film exhibits a reversible displacive transformation based on an atomic-plane shuffling mechanism, which results in large electrical and optical contrasts. We found that MnTe polycrystalline films show reversible resistive switching via fast Joule heating and enable nonvolatile memory with lower energy and faster operation compared with conventional phase-change materials showing diffusional amorphous-to-crystalline transition. We also found that the optical reflectance of MnTe films can be reversibly changed by laser heating. The present findings offer new insights into developing low power consumption and fast-operation electronic and photonic phase-change devices.

Thermal Conductivity Measurements and Modeling of Phase-Change GST Materials

2007 ◽  
Author(s):  
Yizhang Yang ◽  
Taehee Jeong ◽  
Hendrik F. Hamann ◽  
Jimmy Zhu ◽  
Mehdi Asheghi
Keyword(s):  
Thermal Conductivity ◽  
Phase Change ◽  
Data Storage ◽  
Flash Memory ◽  
Performance Optimization ◽  
Phase Change Materials ◽  
Memory Cell ◽  
Data Access ◽  
Optical Recording ◽  
Access Time

Phase-change technology has been widely used in rewritable disks for optical recording applications. Recently, it has also received attention as a candidate for future high storage density non-volatile random access memory, due to its much longer cycle life (∼1013) and fast data access time (∼100ns) compared with the existing Flash memory technology. In this paper, we present thermal conductivity data and models for phase-change GeSbTe material that would be helpful in performance optimization and improvement in the reliability (i.e., enhancement of data rate, cyclability, control of mark-edge jitter) of phase-change-based data storage devices and systems. We perform the thermal characterization of Ge4Sb1Te5 and Ge2Sb2Te5 phase-change materials for the application of optical recording and phase-change memory cell using the techniques of thermoreflectance and electrical resistance thermometry. The limits of lattice and electronic thermal conductivities are investigated to determine their relative contributions as a function of tellurium concentration at different crystalline structures.

Structure of Phase Change Materials for Data Storage

2006 ◽  
Vol 96 (5) ◽  
Author(s):  
Zhimei Sun ◽  
Jian Zhou ◽  
Rajeev Ahuja
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials

GaGeTe films as phase-change optical recording media

1995 ◽  
Vol 270 (1-2) ◽  
pp. 60-64 ◽  
Author(s):  
Y. Sripathi ◽  
L.K. Malhotra ◽  
G.B. Reddy
Keyword(s):  
Phase Change ◽  
Optical Recording ◽  
Recording Media

Improving the reflectance and color contrasts of phase-change materials by vacancy reduction for optical-storage and display applications

2019 ◽  
Vol 45 (1) ◽  
pp. 244
Author(s):  
Jianbo Wang ◽  
Qian Li ◽  
Shuaipeng Tao ◽  
Zhoubo Xia ◽  
Yuankai Li ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Optical Storage

Thermal Characterization of Dielectric and Phase Change Materials for the Optical Recording Applications

2005 ◽  
Author(s):  
Y. Yang ◽  
Chun-Teh Li ◽  
S. M. Sadeghipour ◽  
M. Asheghi ◽  
H. Dieker ◽  
...  
Keyword(s):  
Phase Change ◽  
Phase Change Materials ◽  
Thermal Characterization ◽  
Technical Conference ◽  
Boundary Resistance ◽  
Optical Recording ◽  
Electronic Systems ◽  
Recording Technology ◽  
Sio2 Phase

Advances in the phase change optical recording technology strongly depend on the optical and thermal optimizations of the metal/ZnS-SiO2/phase change multilayer structure, which requires accurate modeling and thermal characterization of PC media structure. In the present work, the thermal conductivities of the amorphous and crystalline Ge4Sb1Te5 (GST) phase change; and ZnS-SiO2 dielectric layers of thickness in the range of 50 nm to 300 nm have been measured using the transient thermoreflectance technique. The data are between a factor of 2–4 different from the previously measured values for thin film and bulk samples. The thermal boundary resistance at metal/ZnS-SiO2 interface is found to be around 7×10−8 m2W−1. This might have serious implications for the future phase change recording application which attempts to achieve the high writing speeds by decreasing the thickness of ZnS-SiO2 dielectric layer.   This paper was also originally published as part of the Proceedings of the ASME 2005 Pacific Rim Technical Conference and Exhibition on Integration and Packaging of MEMS, NEMS, and Electronic Systems.

Phase-change materials for rewriteable data storage

2007 ◽  
Vol 6 (11) ◽  
pp. 824-832 ◽  
Author(s):  
Matthias Wuttig ◽  
Noboru Yamada
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials

Design Rules for Phase-Change Materials in Data Storage Applications

2011 ◽  
Vol 23 (18) ◽  
pp. 2030-2058 ◽  
Author(s):  
Dominic Lencer ◽  
Martin Salinga ◽  
Matthias Wuttig
Keyword(s):  
Phase Change ◽  
Data Storage ◽  
Phase Change Materials ◽  
Design Rules
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