scholarly journals Heterojunction Bipolar Transistor: 2D Material-Based Vertical Double Heterojunction Bipolar Transistors with High Current Amplification (Adv. Electron. Mater. 3/2019)

2019 ◽  
Vol 5 (3) ◽  
pp. 1970015
Author(s):  
Geonyeop Lee ◽  
Stephen J. Pearton ◽  
Fan Ren ◽  
Jihyun Kim
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
High Current ◽  
2D Material ◽  
Double Heterojunction ◽  
Current Amplification

The Challenge of GaAs Heterojunction Bipolar Transistor Integrated Circuit Technology.

1988 ◽  
Vol 144 ◽  
Author(s):  
Han-Tzong Yuan
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
Large Scale ◽  
Ohmic Contacts ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
The Status ◽  
Impurity Doping

ABSTRACTThe status and progress of AlGaAs/GaAs heterojunction bipolar transistor integrated circuits are reviewed. The challenge of fabricating large-scale integrated circuits using heterojunction bipolar transistors is discussed. Specifically, the issues related to low defect epitaxial materials, localized impurity doping techniques, simple and reliable ohmic contacts, and multilevel interconnects are examined.

scholarly journals Investigation of the static current gain for InP/InGaAs single heterojunction bipolar transistor

2019 ◽  
Vol 13 (3) ◽  
pp. 1345
Author(s):  
Jihane Ouchrif ◽  
Abdennaceur Baghdad ◽  
Aicha Sshel ◽  
Abdelmajid Badri ◽  
Abdelhakim Ballouk
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Communication Systems ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Technological Parameters ◽  
Device Structure ◽  
Optimal Values ◽  
Output Characteristics

<p>Heterojunction Bipolar Transistors are being used increasingly in communication systems due to their electrical performances. They are considered as excellent electronic devices. This paper presents an investigation of the static current gain β based on two technological parameters related to the device geometry for InP/InGaAs Single Heterojunction Bipolar Transistor (SHBT). These parameters are the base width  and the emitter length . We used Silvaco’s TCAD tools to design the device structure, and to extract the static current gain β from I-V output characteristics figures. According to this investigation, we determined the optimal values of the examined parameters which allow obtaining the highest static current gain β.</p>

2D Cu 9 S 5 /PtS 2 /WSe 2 Double Heterojunction Bipolar Transistor with High Current Gain

2021 ◽  
pp. 2106537
Author(s):  
Sanjun Yang ◽  
Lejing Pi ◽  
Liang Li ◽  
Kailang Liu ◽  
Ke Pei ◽  
...  
Keyword(s):  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
High Current ◽  
Double Heterojunction

Molecular beam epitaxial double heterojunction bipolar transistors with high current gains

1983 ◽  
Vol 19 (4) ◽  
pp. 128 ◽  
Author(s):  
S.L. Su ◽  
W.G. Lyons ◽  
O. Tejayadi ◽  
R. Fischer ◽  
W. Kopp ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Molecular Beam ◽  
Bipolar Transistors ◽  
High Current ◽  
Molecular Beam Epitaxial ◽  
Double Heterojunction

High-Current-Gain Direct-Growth GaN/InGaN Double Heterojunction Bipolar Transistors

2010 ◽  
Vol 57 (11) ◽  
pp. 2964-2969 ◽  
Author(s):  
Yi-Che Lee ◽  
Yun Zhang ◽  
Hee-Jin Kim ◽  
Suk Choi ◽  
Zachary Lochner ◽  
...  
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Bipolar Transistors ◽  
Current Gain ◽  
High Current ◽  
Double Heterojunction ◽  
Direct Growth
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