scholarly journals Investigation of the static current gain for InP/InGaAs single heterojunction bipolar transistor

2019 ◽  
Vol 13 (3) ◽  
pp. 1345
Author(s):  
Jihane Ouchrif ◽  
Abdennaceur Baghdad ◽  
Aicha Sshel ◽  
Abdelmajid Badri ◽  
Abdelhakim Ballouk
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Communication Systems ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Technological Parameters ◽  
Device Structure ◽  
Optimal Values ◽  
Output Characteristics

<p>Heterojunction Bipolar Transistors are being used increasingly in communication systems due to their electrical performances. They are considered as excellent electronic devices. This paper presents an investigation of the static current gain β based on two technological parameters related to the device geometry for InP/InGaAs Single Heterojunction Bipolar Transistor (SHBT). These parameters are the base width  and the emitter length . We used Silvaco’s TCAD tools to design the device structure, and to extract the static current gain β from I-V output characteristics figures. According to this investigation, we determined the optimal values of the examined parameters which allow obtaining the highest static current gain β.</p>

scholarly journals How does technological parameters impact the static current gain of InP-based Single Heterojunction Bipolar Transistor?

2019 ◽  
Vol 9 (5) ◽  
pp. 3432
Author(s):  
Jihane Ouchrif ◽  
Abdennaceur Baghdad ◽  
Aicha Sahel ◽  
Abdelmajid Badri ◽  
Abdelhakim Ballouk
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Electronic Device ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Physical Models ◽  
Electrical Performance ◽  
Current Gain ◽  
Electrical Characteristics ◽  
Technological Parameters ◽  
Device Structure

<p>In telecommunication systems, Heterojunction Bipolar Transistors (HBTs) are used extensively due to their good electrical characteristics. The work presented in this paper aims to enhance the electrical performance of the InP / InGaAs Single Heterojunction Bipolar Transistor (SHBT) in terms of the static current gain β. Silvaco’s TCAD tools were used for the simulation of the output characteristics of the studied electronic device. Initially, we used the interactive tool Deckbuild to define the simulation program and the device editor DevEdit to design the device structure, and we also used the simulator Atlas which allows the prediction of the electrical characteristics of most semiconductor devices. Because of several phenomena occuring within the electronic device SHBT, we added some physical models included in the simulator such as SRH, BBT.STD. Afterwards, we investigated the influence of doping concentrations of the base and the collector N<sub>b</sub> and N<sub>c</sub> on the electrical performance of the InP/InGaAs SHBT, and particularly in terms of the static current gain β. Finally, based on optimal values of the selected parameters, we have defined an optimized device that has a highest current gain β.</p>

scholarly journals A GaN/4H-SiC heterojunction bipolar transistor with operation up to 300°C

1999 ◽  
Vol 4 (1) ◽  
Author(s):  
John T Torvik ◽  
M. Leksono ◽  
J. I. Pankove ◽  
B. Van Zeghbroeck
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Room Temperature ◽  
Chemical Vapor ◽  
Bipolar Transistors ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Device Structure ◽  
Fabrication And Characterization ◽  
Dc Current

We report on the fabrication and characterization of GaN/4H-SiC n-p-n heterojunction bipolar transistors (HBTs). The device structure consists of an n-SiC collector, p-SiC base, and selectively grown n-GaN emitter. The HBTs were grown using metalorganic chemical vapor deposition on SiC substrates. Selective GaN growth through a SiO2 mask was used to avoid damage that would be caused by reactive ion etching. In this report, we demonstrate common base transistor operation with a modest dc current gain of 15 at room temperature and 3 at 300°C.

Prevention of InP/InGaAs/InP Double Heterojunction Bipolar Transistors from Current Gain Reduction during Passivation

2004 ◽  
Vol 833 ◽  
Author(s):  
Byoung-Gue Min ◽  
Jong-Min Lee ◽  
Seong-Il Kim ◽  
Chul-Won Ju ◽  
Kyung-Ho Lee
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
Silicon Oxide ◽  
Surface Recombination ◽  
Surface States ◽  
Bipolar Transistors ◽  
Base Layer ◽  
Current Gain ◽  
Device Structure ◽  
Double Heterojunction ◽  
Gain Reduction

ABSTRACTA significant degradation of current gain of InP/InGaAs/InP double heterojunction bipolar transistors was observed after passivation. The amount of degradation depended on the degree of surface exposure of the p-type InGaAs base layer according to the epi-structure and device structure. The deposition conditions such as deposition temperature, kinds of materials (silicon oxide, silicon nitride and aluminum oxide) and film thickness were not major variables to affect the device performance. The gain reduction was prevented by the BOE treatment before the passivation. A possible explanation of this behavior is that unstable non-stoichiometric surface states produced by excess In, Ga, or As after mesa etching are eliminated by BOE treatment and reduce the surface recombination sites.

The Challenge of GaAs Heterojunction Bipolar Transistor Integrated Circuit Technology.

1988 ◽  
Vol 144 ◽  
Author(s):  
Han-Tzong Yuan
Keyword(s):  
Integrated Circuits ◽  
Heterojunction Bipolar Transistors ◽  
Integrated Circuit ◽  
Large Scale ◽  
Ohmic Contacts ◽  
Bipolar Transistors ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
The Status ◽  
Impurity Doping

ABSTRACTThe status and progress of AlGaAs/GaAs heterojunction bipolar transistor integrated circuits are reviewed. The challenge of fabricating large-scale integrated circuits using heterojunction bipolar transistors is discussed. Specifically, the issues related to low defect epitaxial materials, localized impurity doping techniques, simple and reliable ohmic contacts, and multilevel interconnects are examined.

scholarly journals MOCVD-Grown InGa/GaAs Emitter Delta Doping Heterojunction Bipolar Transistors

2002 ◽  
Vol 25 (3) ◽  
pp. 239-243
Author(s):  
K. F. Yarn
Keyword(s):  
Heterojunction Bipolar Transistors ◽  
High Gain ◽  
Bipolar Transistors ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Offset Voltage ◽  
Delta Doping ◽  
Spacer Layer ◽  
Potential Spike ◽  
Low Offset

The influence of delta doping sheet at base-emitter (BE) junction for an InGaP/GaAs heterojunction bipolar transistor (HBT) with a 75Å undoped spacer layer is investigated. A common emitter current gain of 235, an offset voltage as small as 50mV and an Ic ideal factor of 1.01 are obtained, respectively. The use of delta doping sheet at BE junction results in a high gain and low offset voltage HBT. The improvement of current gain and offset voltage may be attributed to the reduction of BE potential spike by introducing a delta doping layer even without the BE junction passivation.

The First Wafer-fused AlGaAs-GaAs-GaN Heterojunction Bipolar Transistor

2002 ◽  
Vol 743 ◽  
Author(s):  
Sarah Estrada ◽  
Andreas Stonas ◽  
Andrew Huntington ◽  
Huili Xing ◽  
Larry Coldren ◽  
...  
Keyword(s):  
High Mobility ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Current Gain ◽  
Fusion Temperature ◽  
Device Structure ◽  
Wafer Fusion ◽  
Current Voltage ◽  
Diffusion Effects ◽  
Current Voltage Characteristics

ABSTRACTWe describe the use of wafer fusion to form a heterojunction bipolar transistor (HBT), with an AlGaAs-GaAs emitter-base fused to a GaN collector. In this way, we hope to make use of both the high breakdown voltage of the GaN and the high mobility of the technologically more mature GaAs-based materials. This paper reports the first dc device characteristics of a wafer-fused transistor, and demonstrates the potential of wafer fusion for forming electronically active, lattice-mismatched heterojunctions. Devices utilized a thick base (0.15um) and exhibited limited common-emitter current gain (0.2–0.5) at an output current density of ∼100A/cm2. Devices were operated to VCE greater than 20V, with a low VCE offset (1V). Improvements in both device structure and wafer fusion conditions should provide further improvements in HBT performance. The HBT was wafer-fused at 750°C for one hour. Current-voltage characteristics of wafer-fused p-GaAs/n-GaN diodes suggest that the fusion temperature could be reduced to 500°C. Such a reduction in process temperature should mitigate detrimental diffusion effects in future HBTs.

scholarly journals Non-Graded Base Si/Ge Heterojunction Transistor

2019 ◽  
Vol 6 (1) ◽  
Author(s):  
Sam Mil'shtein ◽  
Harsha Purushothama Dombala ◽  
Oliver A Kia ◽  
Mukhammaddin Zinaddinov
Keyword(s):  
Wireless Communication ◽  
Power Amplifiers ◽  
Communication Systems ◽  
Carrier Transport ◽  
Lattice Mismatch ◽  
Bipolar Transistor ◽  
Heterojunction Bipolar Transistor ◽  
Buffer Layers ◽  
Current Gain ◽  
Wide Range

<strong>Innovation of Heterojunction Bipolar Transistor (HBT) technology is a major game changer in wireless communication, power amplifiers and other major fields of electronics. HBTs play a vital role in extending the advantages of silicon bipolar transistors to significantly higher levels. Research on HBT is focused on reducing cost and improving reliability.  These transistors have a wide range of applications namely, digital-to-analog converters, logarithmic amplifiers, RF chip sets for CDMA wireless communication systems, and power amplifiers for cellular communications. Our study focuses on utilizing the high mobility of pure Ge instead of often-used graded Ge base. Non-grtaded Ge base enhanses carrier transport which in turn increases the gain and cut-off frequency of the HBT. We have developed a high frequency, high current gain, high power gain and less noisy heterojunction bipolar transistor operating above 100GHz frequency. Lattice mismatch at emitter and collector junctions is compensated by inserting SiGe buffer layers. ATLAS TCAD - SILVACO software is used for modelling of this novel device.</strong>

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