Synthesis of novel functionalized methacrylate copolymers and their copolymerization kinetics, thermal stability, and biocidal properties

Abstract The thermal properties together with the identification of the emitted volatiles during heating of the starch-graft-poly(geranyl methacrylate) copolymers with the use of a TG/FTIR-coupled method and some of the physicochemical properties of the copolymers were determined. It was found that the use of the geranyl methacrylate monomer to the graft copolymerization with potato starch allowed to replace ca. 1.46 hydroxyl groups per glycosidic units of starch macromolecule by the poly(geranyl methacrylate) chains under the optimal reaction conditions. Generally, all tested starch graft copolymers exhibited a significant increase in polar solvent resistance, moisture resistance and chemical stability as compared to potato starch. However, the thermal stability of the obtained materials was substantially lower as compared to the thermal stability of potato starch. The beginning of the decomposition of the copolymers was observed below 150 °C. It was due to low thermal stability of the poly(geranyl methacrylate) chains. The decomposition of the prepared materials runs at least four, unseparated stages. The first stage was visible up to 220–240 °C. It was connected with the emission of some aldehyde, acid, alcohol, alkene, ester fragments, H2O and CO2 as a result of the depolymerization, destruction and partial decarboxylation of the poly(geranyl methacrylate) chains. The second stage was spread between ca. 220–240 and 358–375 °C. The emission of organic, saturated, unsaturated, aromatic, oxygen-rich fragments, CO, CO2 and H2O as a result of the decomposition and dehydration of starch was confirmed. Heating of the studied materials between 358–375 and 455–477 °C resulted in subsequent decomposition processes of the residues and the creation of some oxygen-rich saturated and unsaturated fragments, CO, CO2, H2O and CH4. Finally, above 455–477 °C, a minor mass loss as a result of the decomposition processes of the residues formed before was observed. The emission of CO, CO2, H2O, CH4 and some oxygen-rich saturated and unsaturated fragments was confirmed.

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Thermal stability of methyl methacrylate copolymers with some dimethacrylates

Polymer Science U S S R ◽

10.1016/0032-3950(81)90036-8 ◽

1981 ◽

Vol 23 (11) ◽

pp. 2650-2655

Author(s):

T.G. Chmykhova ◽

N.I. Nikiforova ◽

Ye.F. Samarin ◽

B.P. Shtarkman ◽

E.G. Pomerantseva ◽

...

Keyword(s):

Thermal Stability ◽

Methyl Methacrylate ◽

Methacrylate Copolymers ◽

Thermal Stability Of

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Synthesis and characterization of novel methacrylate copolymers based on sulfonamide and coumarine: Monomer reactivity ratios, biological activity, thermal stability, and optical properties

Journal of Polymer Science Part A Polymer Chemistry ◽

10.1002/pola.24220 ◽

2010 ◽

Vol 48 (19) ◽

pp. 4323-4334 ◽

Cited By ~ 7

Author(s):

Ibrahim Erol ◽

Gülay Sanli ◽

Meltem Dİlek ◽

Levent Ozcan

Keyword(s):

Thermal Stability ◽

Optical Properties ◽

Biological Activity ◽

Synthesis And Characterization ◽

Reactivity Ratios ◽

Monomer Reactivity Ratios ◽

Methacrylate Copolymers

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The Ordered Phase Formation in Ti-Al-Ga Alloys

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100069193 ◽

1970 ◽

Vol 28 ◽

pp. 440-441

Author(s):

Shiro Fujishiro ◽

Harold L. Gegel

Keyword(s):

Thermal Stability ◽

High Temperature ◽

Titanium Alloys ◽

Growth Kinetics ◽

Stoichiometric Composition ◽

Good Potential ◽

Alpha Titanium ◽

Cold Rolled ◽

Kinetics Of ◽

Thermal Stability Of

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization

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Microstructure studies of tungsten silicide schottky contacts on Gaas

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100126445 ◽

1987 ◽

Vol 45 ◽

pp. 328-329

Author(s):

Yih-Cheng Shih ◽

E. L. Wilkie

Keyword(s):

Thermal Stability ◽

Field Effect Transistors ◽

Schottky Contact ◽

Schottky Contacts ◽

Excellent Thermal Stability ◽

Barrier Heights ◽

Gaas Substrates ◽

Film Adhesion ◽

Threshold Voltages ◽

Thermal Stability Of

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.

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Evolution of the microstructure of Cu(Ti)/SiO2 layers annealed in NH3

Proceedings, annual meeting, Electron Microscopy Society of America ◽

10.1017/s0424820100138634 ◽

1995 ◽

Vol 53 ◽

pp. 452-453

Author(s):

J. Liu ◽

N. D. Theodore ◽

D. Adams ◽

S. Russell ◽

T. L. Alford ◽

...

Keyword(s):

Thermal Stability ◽

Titanium Nitride ◽

Large Scale ◽

Standard Procedure ◽

Alloy Film ◽

Electron Beam Evaporation ◽

Copper Metallization ◽

Nominal Composition ◽

Ti Alloy ◽

Thermally Grown

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.

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