Sn+-implantation and radiation-induced structural modifications in amorphous SiO2

1996 ◽  
Vol 100 (9) ◽  
pp. 1535-1538 ◽  
Author(s):  
T. Angermann ◽  
H. H. Dunken
Keyword(s):  
Amorphous Sio2 ◽  
Structural Modifications ◽  
Radiation Induced

Structural Modifications in Thin Films Caused by Gamma Radiation

2005 ◽  
Vol 480-481 ◽  
pp. 13-20 ◽  
Author(s):  
Khalil Arshak ◽  
Olga Korostynska ◽  
John Henry
Keyword(s):  
Thin Films ◽  
Gamma Radiation ◽  
Structural Changes ◽  
X Ray Diffraction ◽  
Thermal Vacuum ◽  
X Ray ◽  
Structural Modifications ◽  
Thin Oxide Films ◽  
Radiation Induced ◽  
Induced Changes

This paper reports on the gamma radiation-induced changes in thin oxide films deposited by thermal vacuum technique. Structures of various oxides thin films, such as In2O3, SiO and TeO2 and their mixtures in different proportions were studied. The influence of gamma radiation on In2O3/SiO films has resulted in significant changes in the microstructure of this film. Some kind of agglomerations with variable sizes in the range 0.5-3 µm has occurred. After a dose of 8160 µSv an evidence of partial crystallisation was observed with X-ray diffraction. Structural changes in TeO2 thin film were explored by means of Raman spectroscopy. After they have been exposed to g- radiation, a strong peak appeared at 448.83 cm-1, indicating further transformation to g-TeO2 modification.

Defect Structure of Ion-Irradiated Amorphous SiO2

1997 ◽  
Vol 30 (5) ◽  
pp. 618-622 ◽  
Author(s):  
Y. Eyal ◽  
R. Evron ◽  
Y. Cohen
Keyword(s):  
Ion Irradiation ◽  
Chemical Properties ◽  
Atomic Displacement ◽  
Amorphous Sio2 ◽  
X Ray Scattering ◽  
Scattering Centers ◽  
Radiation Induced ◽  
Induced Changes ◽  
Physical And Chemical ◽  
And Chemical Properties

Uniformly enhanced small-angle X-ray scattering intensities of amorphous SiO2, measured following irradiation with 320 keV H+ and He+ beams, are shown to be correlated, irrespective of the incident ion, with the O and Si cumulative displacement yields. Damage by both beams originated primarily from nuclear stopping but, under H+-ion irradiation, contributions from ionization processes were significant as well. At low beam fluences, the irradiated structure is compatible with the presence of stable radiation-induced interstitial-like O and Si atoms and complementary O and Si vacancy-like sites. There is no evidence for recovery near room temperature of the modified structure to the pre-irradiated state or for formation of colloidal-size scattering centers, such as gas bubbles or voids. Thus, ion-irradiation-induced changes in physical and chemical properties of silica seem to be due to the effect of the preserved primary atomic displacement damage.

Fundamental Role of Creation and Activation in Radiation-Induced Defect Production in High-Purity Amorphous SiO2

1996 ◽  
Vol 76 (16) ◽  
pp. 2926-2929 ◽  
Author(s):  
V. A. Mashkov ◽  
Wm. R. Austin ◽  
Lin Zhang ◽  
R. G. Leisure
Keyword(s):  
High Purity ◽  
Defect Production ◽  
Amorphous Sio2 ◽  
Radiation Induced

scholarly journals X-ray radiation during pulsed laser treatment of opal matrices

2018 ◽  
pp. 10-16
Author(s):  
А. F. Belyanin ◽  
V. V. Borisov ◽  
V. V. Popov
Keyword(s):  
Laser Excitation ◽  
Pulsed Laser ◽  
Energy Spectra ◽  
Amorphous Sio2 ◽  
X Ray ◽  
Preparation Conditions ◽  
Optical Effects ◽  
Nonlinear Optical Effects ◽  
Radiation Induced ◽  
Sio2 Spheres

The paper presents the structure and preparation conditions of opal matrices (ordered 3D-lattice packing of X-ray amorphous SiO2 spheres with a diameter of ≈250 nm), as well as experimental data on nonlinear optical effects in opal matrices with pulsed laser excitation at wavelengths: 1040 nm, 510 nm in conjunction with 578 nm, and 366 nm. The authors investigate the energy spectra of X-ray radiation induced in the samples by laser irradiation.

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