ChemInform Abstract: Determination of the Phase Diagram of the V-Ni-Cr System Using Diffusion Couples and Equilibrated Alloys.

ChemInform ◽  
1987 ◽  
Vol 18 (48) ◽  
Author(s):  
A. A. KODENTSOV ◽  
S. F. DUNAEV ◽  
E. M. SLYUSARENKO
2006 ◽  
Vol 522-523 ◽  
pp. 103-110 ◽  
Author(s):  
Yuri Kitajima ◽  
Shigenari Hayashi ◽  
Toshio Narita

Phase equilibria in the Ni-Al-Cr system at 1150°C were investigated by using annealed ternary alloys and diffusion couples. The phase constitutions, microstructures, and tie-lines were determined by conventional techniques, including X-ray diffraction, scanning electron microscopy and electron probe microanalysis. The solubility limits of Cr was found to be about 9at.% in the γ’ and 17at.% in the β phase. The size of second or third phase precipitates in the alloys was found to affect the determination of the tie-lines by the micro probe analysis.


Author(s):  
R. M. Anderson ◽  
T. M. Reith ◽  
M. J. Sullivan ◽  
E. K. Brandis

Thin films of aluminum or aluminum-silicon can be used in conjunction with thin films of chromium in integrated electronic circuits. For some applications, these films exhibit undesirable reactions; in particular, intermetallic formation below 500 C must be inhibited or prevented. The Al films, being the principal current carriers in interconnective metal applications, are usually much thicker than the Cr; so one might expect Al-rich intermetallics to form when the processing temperature goes out of control. Unfortunately, the JCPDS and the literature do not contain enough data on the Al-rich phases CrAl7 and Cr2Al11, and the determination of these data was a secondary aim of this work.To define a matrix of Cr-Al diffusion couples, Cr-Al films were deposited with two sets of variables: Al or Al-Si, and broken vacuum or single pumpdown. All films were deposited on 2-1/4-inch thermally oxidized Si substrates. A 500-Å layer of Cr was deposited at 120 Å/min on substrates at room temperature, in a vacuum system that had been pumped to 2 x 10-6 Torr. Then, with or without vacuum break, a 1000-Å layer of Al or Al-Si was deposited at 35 Å/s, with the substrates still at room temperature.


1993 ◽  
Vol 90 ◽  
pp. 249-254 ◽  
Author(s):  
C Wolverton ◽  
M Asta ◽  
S Ouannasser ◽  
H Dreyssé ◽  
D de Fontaine

2003 ◽  
Vol 10 (04) ◽  
pp. 677-683 ◽  
Author(s):  
E. B. Hannech ◽  
N. Lamoudi ◽  
N. Benslim ◽  
B. Makhloufi

Intermetallic formation at 425°C in the aluminum–copper system has been studied by scanning electron microscopy using welded diffusion couples. Several Al–Cu phases predicted by the equilibrium phase diagram of the elements and voids taking place in the diffusion zone have been detected in the couples. The predominant phases were found to be Al 2 Cu 3 and the solid solution of Al in Cu, α. The growth of the intermetallic layer obeyed the parabolic law.


2016 ◽  
Vol 70 (12) ◽  
Author(s):  
Leonid Serafimov ◽  
Anastasia Frolkova

AbstractA method for the determination of vapor–liquid phase diagram structure of five-component systems based on the analysis of types and Poincare indexes of singular points of the geometric scan and full structure of the concentration simplex is proposed. Validity of the proposed method was demonstrated by vapor–liquid equilibrium modeling in five-component mixtures: ethanol + water + toluene + butanol + chlorbenzene and acetone + chloroform + ethanol + cyclohexane + water.


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