ChemInform Abstract: The Thermal Stability and Structural Site-Distribution of Eu3+Ions in the Red-Emitting Phosphors Ca9Eu2W4O24and Sr9Eu2W4O24.

ChemInform ◽  
2012 ◽  
Vol 43 (37) ◽  
pp. no-no
Author(s):  
Chuanxiang Qin ◽  
Yanlin Huang ◽  
Hyo Jin Seo
Author(s):  
Shiro Fujishiro ◽  
Harold L. Gegel

Ordered-alpha titanium alloys having a DO19 type structure have good potential for high temperature (600°C) applications, due to the thermal stability of the ordered phase and the inherent resistance to recrystallization of these alloys. Five different Ti-Al-Ga alloys consisting of equal atomic percents of aluminum and gallium solute additions up to the stoichiometric composition, Ti3(Al, Ga), were used to study the growth kinetics of the ordered phase and the nature of its interface.The alloys were homogenized in the beta region in a vacuum of about 5×10-7 torr, furnace cooled; reheated in air to 50°C below the alpha transus for hot working. The alloys were subsequently acid cleaned, annealed in vacuo, and cold rolled to about. 050 inch prior to additional homogenization


Author(s):  
Yih-Cheng Shih ◽  
E. L. Wilkie

Tungsten silicides (WSix) have been successfully used as the gate materials in self-aligned GaAs metal-semiconductor-field- effect transistors (MESFET). Thermal stability of the WSix/GaAs Schottky contact is of major concern since the n+ implanted source/drain regions must be annealed at high temperatures (∼ 800°C). WSi0.6 was considered the best composition to achieve good device performance due to its low stress and excellent thermal stability of the WSix/GaAs interface. The film adhesion and the uniformity in barrier heights and ideality factors of the WSi0.6 films have been improved by depositing a thin layer of pure W as the first layer on GaAs prior to WSi0.6 deposition. Recently WSi0.1 has been used successfully as the gate material in 1x10 μm GaAs FET's on the GaAs substrates which were sputter-cleaned prior to deposition. These GaAs FET's exhibited uniform threshold voltages across a 51 mm wafer with good film adhesion after annealing at 800°C for 10 min.


Author(s):  
J. Liu ◽  
N. D. Theodore ◽  
D. Adams ◽  
S. Russell ◽  
T. L. Alford ◽  
...  

Copper-based metallization has recently attracted extensive research because of its potential application in ultra-large-scale integration (ULSI) of semiconductor devices. The feasibility of copper metallization is, however, limited due to its thermal stability issues. In order to utilize copper in metallization systems diffusion barriers such as titanium nitride and other refractory materials, have been employed to enhance the thermal stability of copper. Titanium nitride layers can be formed by annealing Cu(Ti) alloy film evaporated on thermally grown SiO2 substrates in an ammonia ambient. We report here the microstructural evolution of Cu(Ti)/SiO2 layers during annealing in NH3 flowing ambient.The Cu(Ti) films used in this experiment were prepared by electron beam evaporation onto thermally grown SiO2 substrates. The nominal composition of the Cu(Ti) alloy was Cu73Ti27. Thermal treatments were conducted in NH3 flowing ambient for 30 minutes at temperatures ranging from 450°C to 650°C. Cross-section TEM specimens were prepared by the standard procedure.


Author(s):  
Ian M. Anderson

B2-ordered iron aluminide intermetallic alloys exhibit a combination of attractive properties such as low density and good corrosion resistance. However, the practical applications of these alloys are limited by their poor fracture toughness and low room temperature ductility. One current strategy for overcoming these undesirable properties is to attempt to modify the basic chemistry of the materials with alloying additions. These changes in the chemistry of the material cannot be fully understood without a knowledge of the site-distribution of the alloying elements. In this paper, the site-distributions of a series of 3d-transition metal alloying additions in B2-ordered iron aluminides are studied with ALCHEMI.A series of seven alloys of stoichiometry Fe50AL45Me5, with Me = {Ti, V, Cr, Mn, Co, Ni, Cu}, were prepared with identical heating cycles. Microalloying additions of 0.2% B and 0.1% Zr were also incorporated to strengthen the grain boundaries, but these alloying additions have little influence on the matrix chemistry and are incidental to this study.


2020 ◽  
Author(s):  
Feng Xiao ◽  
Bin Yao ◽  
Pavankumar Challa Sasi ◽  
Svetlana Golovko ◽  
Dana Soli ◽  
...  

1991 ◽  
Vol 1 (12) ◽  
pp. 1823-1836 ◽  
Author(s):  
M. Bessière ◽  
A. Quivy ◽  
S. Lefebvre ◽  
J. Devaud-Rzepski ◽  
Y. Calvayrac

1994 ◽  
Vol 4 (4) ◽  
pp. 653-657
Author(s):  
B. Bonzi ◽  
M. El Khomssi ◽  
H. Lanchon-Ducauquis

1998 ◽  
Vol 08 (PR2) ◽  
pp. Pr2-63-Pr2-66 ◽  
Author(s):  
R. Varga ◽  
P. Vojtaník ◽  
A. Lovas

1986 ◽  
Vol 47 (C8) ◽  
pp. C8-1165-C8-1168
Author(s):  
M. ZEPPEZAUER ◽  
C. HAAS ◽  
W. MARET ◽  
C. HERMES ◽  
R. F. PETTIFER

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