Temperature dependence of electrical conductivity and hall effect of Ga2Se3 single crystal

1995 ◽  
Vol 30 (1) ◽  
pp. 135-139 ◽  
Author(s):  
A. E. Belal ◽  
H. A. El-shaikh ◽  
I. A. Ashraf
Keyword(s):  
Electrical Conductivity ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect

scholarly journals Температурная зависимость напряжения, вызванного спиновым током в гетероструктуре манганит/иридат

2021 ◽  
Vol 63 (9) ◽  
pp. 1321
Author(s):  
Т.А. Шайхулов ◽  
К.Л. Станкевич ◽  
К.И. Константинян ◽  
В.В. Демидов ◽  
Г.А. Овсянников
Keyword(s):  
Thin Film ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Ferromagnetic Resonance ◽  
Room Temperature ◽  
Ferromagnetic Layer ◽  
Spin Current ◽  
Epitaxial Thin Film ◽  
Inverse Spin Hall Effect

The temperature dependence of the voltage induced by the spin current was studied in an epitaxial thin-film La0.7Sr0.3MnO3 / SrIrO3 heterostructure deposited on a single-crystal NdGaO3 substrate. The spin current was generated by microwave pumping under conditions of ferromagnetic resonance in the La0.7Sr0.3MnO3 ferromagnetic layer and was detected in the SrIrO3 layer due to inverse spin Hall effect. A significant increase of half-width of the spin current spectrum along with the rise of amplitude of the spin current upon cooling from room temperature (300 K) to 135 K were observed.

CONDUCTION BAND OF GaSb

1966 ◽  
Vol 44 (11) ◽  
pp. 2715-2728 ◽  
Author(s):  
H. B. Harland ◽  
J. C. Woolley
Keyword(s):  
Magnetic Fields ◽  
Single Crystal ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Conduction Band ◽  
Electron Concentration ◽  
Electron Mobility ◽  
Impurity Level ◽  
Energy Separation ◽  
A Value

Measurements of transverse magnetoresistaiice and Hall effect have been made on various single-crystal n-type samples of GaSb at magnetic fields of up to 2.4 W/m2 and temperatures in the range 4.2–300 °K. An analysis of the results gives values and the temperature dependence for electron concentration n and electron mobility μ for both (000) and [Formula: see text] minima of the conduction band, the energy separation ΔE of (000) and [Formula: see text] minima, and a value for the effective mass m1* of electrons in the [Formula: see text] minima. Values of ΔE0 = 0.084 eV, d(ΔE)/dT = +0.8 × 10−4 eV/°C and m1* = 0.43 me are obtained, while the ratios of the electron mobilities μ0/μ1 lie in the range 5–21. The total number of observed electrons in the two bands, n0 + n1, is found to vary with temperature, and this result is interpreted in terms of an impurity level above the (000) minimum.

HALL EFFECT AND ELECTRICAL CONDUCTIVITY OF Cu2O MONOCRYSTALS

1966 ◽  
Vol 44 (7) ◽  
pp. 1551-1561 ◽  
Author(s):  
E. Fortin ◽  
F. L. Weichman
Keyword(s):  
Electrical Conductivity ◽  
Temperature Dependence ◽  
Hall Effect ◽  
Room Temperature ◽  
Heating Process ◽  
Before And After ◽  
Exponential Temperature Dependence ◽  
Sample Characteristics ◽  
Thermal Histories ◽  
Vacuum Heating

Hall-effect and electrical conductivity measurements were performed on Cu2O single crystals both before and after heating the samples in vacuo at temperatures ranging from 200 °C to 800 °C. Both the absolute values of the mobility and the conductivity, as well as their temperature dependence, were found to be strongly altered by the heating process. Room-temperature conductivities usually dropped from 10−6 ohm−1 cm−1 to 10−8 ohm−1 cm−1, while the mobility increased from about 30 to 100 cm2 V−1 sec−1 after heating to 300 °C. At the same time, the activation energies for the conductivity increased and a region of exponential temperature dependence for the mobility showed up. Vacuum heating above 800 °C again changed the sample characteristics quite drastically and appeared to stabilize them with respect to their environment with different atmospheres. Reproducibility for a given sample and from sample to sample could be obtained only after heating the samples in vacuo. The results are compared with previous investigations, and it is suggested that different surface conditions or thermal histories could account for the wide variety of data found in the literature.

Effect of Cu doping on the electrical Properties of ZnTe by Vacuum Thermal Evaporation

2018 ◽  
Vol 31 (3) ◽  
pp. 20
Author(s):  
Sarmad M. M. Ali ◽  
Alia A.A. Shehab ◽  
Samir A. Maki
Keyword(s):  
Activation Energy ◽  
Electrical Conductivity ◽  
Hall Effect ◽  
Carrier Concentration ◽  
Hall Mobility ◽  
Cu Doping ◽  
Before And After ◽  
Hall Effect Measurements ◽  
Evaporation Technique ◽  
P Type

In this study, the ZnTe thin films were deposited on a glass substrate at a thickness of 400nm using vacuum evaporation technique (2×10-5mbar) at RT. Electrical conductivity and Hall effect measurements have been investigated as a function of variation of the doping ratios (3,5,7%) of the Cu element on the thin ZnTe films. The temperature range of (25-200°C) is to record the electrical conductivity values. The results of the films have two types of transport mechanisms of free carriers with two values of activation energy (Ea1, Ea2), expect 3% Cu. The activation energy (Ea1) increased from 29meV to 157meV before and after doping (Cu at 5%) respectively. The results of Hall effect measurements of ZnTe , ZnTe:Cu films show that all films were (p-type), the carrier concentration (1.1×1020 m-3) , Hall mobility (0.464m2/V.s) for pure ZnTe film, increases the carrier concentration (6.3×1021m-3) Hall mobility (2m2/V.s) for doping (Cu at 3%) film, but  decreases by increasing Cu concentration.

Sign in / Sign up

Export Citation Format

Share Document